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Modélisation du transport électronique et de l'accumulation de la charge dans les isolants en couches minces

Abstract : Dielectric materials can be found in numerous devices in microelectronics. They can be subjected to significant electrical stress, which impacts their lifetime. Indeed, this electrical stress can lead to dielectric breakdown or modify the component performances by charge storage. In this work, several characterization methods and physical analysis have been used in order to study the samples and identify mechanisms involved in charge transport in silicon nitride thin films. Then a simulation code has been developed to model charge transport phenomena in insulators. This model takes into account tunnel and thermal effects in the dielectric and at the dielectric-metal interfaces. The temporal and spatial evolution of physical quantities (currents, charge, electric field) in the dielectric film are calculated. Measurement results on capacitive components can be obtained thanks to simulations. This simulation tool allows testing dielectric materials according to capacitive component reliability. It may be used to define optimal properties for materials depending on applications or to assist in device design in microelectronics.
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https://tel.archives-ouvertes.fr/tel-02078801
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Submitted on : Monday, March 25, 2019 - 4:00:08 PM
Last modification on : Wednesday, October 14, 2020 - 3:43:14 AM
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2018SORUS004.pdf
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  • HAL Id : tel-02078801, version 1

Citation

Anne-Charlotte Amiaud. Modélisation du transport électronique et de l'accumulation de la charge dans les isolants en couches minces. Mécanique des matériaux [physics.class-ph]. Sorbonne Université, 2018. Français. ⟨NNT : 2018SORUS004⟩. ⟨tel-02078801⟩

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