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Dépôt chimique en phase vapeur (CVD) de carbure de silicium (SiC) à partir de vinyltrichlorosilane (VTS) et de méthylsilane (MS)

Abstract : The aim of this thesis is to understand the gas-phase mechanisms that occured during the chemical vapor deposition of silicon carbide from two precursors with different chemistry (chlorinated precursor and non-chrloinated one). Thanks to this study, optimal conditions for infiltration with these two precursors should be found.
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https://tel.archives-ouvertes.fr/tel-02078783
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Submitted on : Monday, March 25, 2019 - 3:50:54 PM
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  • HAL Id : tel-02078783, version 1

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Anthony Desenfant. Dépôt chimique en phase vapeur (CVD) de carbure de silicium (SiC) à partir de vinyltrichlorosilane (VTS) et de méthylsilane (MS). Chimie-Physique [physics.chem-ph]. Université de Bordeaux, 2018. Français. ⟨NNT : 2018BORD0353⟩. ⟨tel-02078783⟩

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