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Terminaisons verticales de jonction remplies avec des couches diélectriques isolantes pour des application haute tension utilisant des composants grand-gap de forte puissance

Abstract : The development of renewable energy away from urban areas requires the transmission of a large amount of energy over long distances. High Voltage Direct Current (HVDC) power transmission has many advantages over AC power transmission. In this context, it is necessary to develop power converters based on high voltage power electronic components, 10 to 30 kV. If silicon components cannot achieve these objectives, silicon carbide (SiC) is positioned as a promising alternative semiconductor material. To support high voltages, a drift region, relatively wide and lightly doped is the heart of the power component. In practice obtaining an effective blocking voltage depends on several factors and especially the design of a suitable junction termination. This thesis presents a method to improve the voltage withstand of SiC components based on the use of junction terminations: Deep Trench Termination. This method uses a trench deep etching around the periphery of the component, filled with a dielectric material to support the spreading of the equipotential lines. The design of the diode with this termination was done by TCAD simulation, with two voltage levels 3 and 20 kV. The work took into account the characteristics of the material, the interface charge of the trench and the technological limits for the fabrication. This work resulted in the fabrication of demonstrators and their characterization to validate the design. During the production of these structures, plasma etching of SiC has been optimized in an ICP reactor so as to obtain a high etching rate and maintaining an electronic quality of the state of etched surfaces. This quality is confirmed by the results of characterization obtained with blocking voltage close to the ideal one.
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  • HAL Id : tel-02061320, version 1

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Thi Thanh Huyen Bui. Terminaisons verticales de jonction remplies avec des couches diélectriques isolantes pour des application haute tension utilisant des composants grand-gap de forte puissance. Electronique. Université de Lyon, 2018. Français. ⟨NNT : 2018LYSEI061⟩. ⟨tel-02061320⟩

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