« Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode, vol.8, p.5, 2010. ,
, Étude de composés semiconducteurs III-N à forte teneur e apélectriques (HEMT) », thesis, 2013.
, « NSM Archive-Physical Properties of Semiconductors
, Optical bandgap energy of wurtzite InN, vol.81, p.12461248, 2002.
Growth and Characterization of Indium Nitride Layers Grown by HighPressure Chemical Vapor Deposition, p.216 ,
, Advanced Transmission Electron Microscopy of GaN-based Materials and Devices, 2011.
Processing, defects, and devices », Journal of Applied Physics, vol.86, issue.1, p.178, 1999. ,
, Present Status and Future Prospect of Widegap Semiconductor HighPower Devices, vol.45, p.75657586, 2006.
« Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures, Journal of Applied Physics, vol.85, issue.6, p.32223233, 1999. ,
Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride, Journal of Applied Physics, vol.113, issue.11, p.113709, 2013. ,
« Semiconducting and other major properties of gallium arsenide, Journal of Applied Physics, vol.53, issue.10, pp.123-181, 1982. ,
, Étude des aspects électrothermiques de la filière HEMT AlGaN/GaN pour application de puissance hyperfréquence, 2004.
A novel AlGaN/GaN based enhancement-mode high electron mobility transistor with sub-critical barrier thickness, 2015. ,
« Current collapse and device degradation in AlGaN/GaN heterostructure field effect transistors, 2011. ,
Physical Properties of Crystals: Their Representation by Tensors and Matrices, 1985. ,
« Spontaneous polarization and piezoelectric constants of III-V nitrides, Physical Review B, vol.56, pp.10024-10027, 1997. ,
« A transmission electron microscopy study of A1GaN/GaN heterostructures / Peter Cherns, 2007. ,
, Thin Film Processes II, 2012.
, Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High Dose, N+ Ion Implantation, vol.16, p.8084, 2010.
, , p.204, 2018.
, Licence CC BY
Elimination of trench defects and V-pits from InGaN/GaN structures, Applied Physics Letters, vol.106, issue.10, p.101905, 2015. ,
Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors, Journal of Applied Physics, vol.93, p.1004610052, 2003. ,
Analysis of leakage current mechanisms in Schottky by molecular-beam epitaxy », Journal of Applied Physics, vol.99, issue.2, p.23703, 2006. ,
, Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si, 2012.
, High dislocation densities in high efficiency GaNbased lightemitting diodes, vol.66, p.12491251, 1995.
, The early history of the high electron mobility transistor (HEMT) », IEEE Transactions on Microwave Theory and Techniques, vol.50, p.780782, 2002.
, Two-dimensional electron gas m.e.s.f.e.t. structure », vol.16, p.667668, 1980.
« Electron mobilities in modulationdoped semiconductor heterojunction superlattices, Appl. Phys. Lett, vol.33, issue.7, p.665667, 1978. ,
, The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects. », présenté à 2011 International Conference on Compound Semiconductor Manufacturing Technology, 2011.
, High electron mobility transistor based on a GaNAlxGa1xN heterojunction, vol.63, p.12141215, 1993.
GaN: Prospect for a record performance, IEEE Electron Device Letters, vol.22, issue.11, p.510512, 2001. ,
« High-sheet-chargecarrier-effect transistors on Si(111), Appl. Phys. Lett, vol.85, p.54005402, 2004. ,
, Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure », physica status solidi (a), vol.176, p.227230, 1999.
« Demonstration-effect transistor on sapphire substrate, Applied Physics Letters, vol.86, p.223510, 2005. ,
High-mobility window for two-dimensional electron gases at u », Applied Physics Letters, vol.90, p.182112, 2007. ,
GaN Insulated-Gate HFETs Using CatCVD SiN, IEEE Electron Device Letters, vol.27, issue.9, p.719721 ,
, , p.205, 2018.
, Licence CC BY
« AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance, IEEE Electron Device Letters, vol.29, issue.7, p.661664, 2008. ,
« HighPerformance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate, IEEE Electron Device Letters, vol.32, issue.7, p.874876, 2011. ,
, Nano-scale Type-II InP / GaAsSb DHBTs to Reach THz Cutoff Frequencies, 2008.
, Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications, vol.50, p.323332, 2013.
« ESA perspective on the industrialisation of European GaN technology for space application, 2014 9th European Microwave Integrated Circuit Conference, p.233236, 2014. ,
, « Gallium Nitride Transistors Drive Automotive Applications, vol.2015, p.2830
« Innovative T/R module in state-of-the-art GaN technology, p.15, 2008. ,
, ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT, vol.37, p.629632, 2016.
, Atlas-Device Simulation Framework
, Sentaurus Device
,
« Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET, IEEE Transactions on Electron Devices, vol.29, issue.6, p.955960, 1982. ,
« Études expérimentales de transistors HFET de la filière nitrure de gallium pour des applications de puissances hyperfréquences, 2003. ,
,
,
,
,
,
Simulation of GaN/AlGaN heterostructures for a HEMT simulator ,
, Hole Trapping and the Negative Bias Temperature Instability, 2011.
Handbook of Mathematical Functions: with Formulas, Graphs, and Mathematical Tables, 0009-Revised edition éd, 1965. ,
« An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs, Solid-State Electronics, vol.46, issue.5, p.621630, 2002. ,
, , p.206, 2018.
, Licence CC BY
« Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, Applied Physics Letters, vol.77, issue.2, p.250252, 2000. ,
Review on Conduction Mechanisms in Dielectric Films, Advances in Materials Science and Engineering, vol.2014, p.18, 2014. ,
, Contribution à la modélisation des transistors pou électrothermique de HEMT AlGaN/GaN incluant les effets de pièges », thesis, 2008.
« Modélisation et caractérisation thermique de transistors de puissance hyperfréquence GaN et conséquences sur la fiabilité de modules radars, 2015. ,
, Polarization Induced 2DEG in AlGaN/GaN HEMTs: On the origin, DC and transient characterization, 2000.
« A Drain-lag Model for AlGaN/GaN Power HEMTs, 2007 IEEE/MTT-S International Microwave Symposium, p.601604, 2007. ,
« Étude de la fiabilité à long terme des transistors HEMT à base de GaN », phdthesis, 2015. ,
,
, Reliability issues of Gallium Nitride High Electron Mobility Transistors, vol.2, p.39
, Control of gate, vol.27, p.10131018, 1980.
« Observation of cross-sectional electric field for GaN-based field effect transistor with field-modulating plate, Applied Physics Letters, vol.90, p.213504, 2007. ,
, High breakdown GaN HEMT with overlapping gate structure, vol.21, p.421423, 2000.
, The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs, vol.21, p.268270, 2000.
Physics of semiconductor devices, 2007. ,
, GaAs Microelectronics: VLSI Electronics Microstructure Science, 2014.
GaAs Devices and Circuits, 2013. ,
Multifunction Chip with a Simple Interface for Active Phased Array Base Station Antennas, ETRI Journal, vol.35, issue.3, p.378385, 2013. ,
Class-F Power Amplifier with Integrated Switched Mode Power Supply, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), p.14, 2012. ,
, , p.207, 2018.
, Licence CC BY
« Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors, Applied Physics Letters, vol.68, p.514516, 1996. ,
FP7-ICT)-GaN-based normally-off high power switching transistor for efficient power converters », CORDIS | European Commission ,
Enhanced substrates and GaN pilot lines enabling compact power applications », CORDIS | European Commission, 2020. ,
, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), p.14, 2012.
, FP7-NMP)-Materials for Robust Gallium Nitride | Projects | FP7-NMP », CORDIS | European Commission
,
, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), p.14, 2010.
« How 600 V GaN Transistors Improve Power Supply Efficiency and Density, vol.2015, p.2015 ,
,
,
« Enhancement mode GaN HEMT device and method for fabricating the same, vol.8404508, pp.26-2013 ,
, « Enhancement Mode and Cascode Configuration GaN-on-Silicon Platforms », LIGHTimes Online, 19-mars-2015
,
, Développement et caractérisation de modules Technologiques la réalisation de cathodes froides et de transistor HEMT AlGaN/GAN », thesis, 2016.
« Recessed-gate enhancement-mode GaN HEMT with high threshold voltage, Electronics Letters, vol.41, issue.7, p.449, 2005. ,
« Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V, 2009 21st International Symposium on Power Semi, p.279282, 2009. ,
« Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by WorkFunction Engineering, IEEE Electron Device Letters, vol.31, issue.9, p.954956, 2010. ,
« Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency, 2011 International Electron Devices Meeting, 2011. ,
« Enhancement-Mode AlN/GaN HFETs Using Cat-CVD SiN, IEEE Transactions on Electron Devices, vol.54, issue.6, p.15661570, 2007. ,
, Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate, vol.31, p.111113
, , p.208, 2018.
, Licence CC BY
High-performance enhancementmode AlGaN/GaN HEMTs using fluoride-based plasma treatment, IEEE Electron Device Letters, vol.26, issue.7, p.435437, 2005. ,
« Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance, 2015 IEEE 27th International Symposium on Power, p.213216, 2015. ,
« Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor highelectron-mobility transistors, Applied Physics Letters, vol.103, issue.3, p.33524, 2013. ,
, Control of Threshold Voltage of Enhancement-Mode AlGaN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact, vol.46, p.115118, 2007.
GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation, IEEE Electron Device Letters, vol.28, issue.7, p.549551, 2007. ,
, Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer, vol.113, p.34502, 2013.
« Gate Injection Transistor (GIT)A Normally-off AlGaN/GaN Power Transistor Using Conductivity Modulation, IEEE Transactions on Electron Devices, vol.54, p.33933399, 2007. ,
, GaN Double Heterojunction Field Effect Transistor For Microwave and Millimeterwave Power Applications, p.4
GaN high electron mobility transistors with InGaN back-barriers, IEEE Electron Device Letters, vol.27, issue.1, p.1315, 2006. ,
, High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT, vol.75, p.347357, 2014.
, Semiconductor Material and Device Characterization, 2005.
« High Drain Current Density E-Mode Al2O3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit, IEEE Transactions on Electron Devices, vol.60, issue.10, p.30793083, 2013. ,
, Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics, 2010.
11heterojunction field effect transistors on (1-102) plane sapphire », Journal of Applied Physics, vol.102, issue.9, p.93703, 2007. ,
, Enhancement-Mode m-plane AlGaN/GaN Heterojunction FieldEffect Transistors, vol.2, p.11001, 2009.
High-performance N-polar GaN enhancement-mode device technology, Semiconductor Science and Technology, vol.28, p.74006, 2013. ,
, , 2018209.
, Licence CC BY
, Normally Off AlGaN/GaN Metal2DEG TunnelJunction Field-Effect Transistors, vol.32, p.303305, 2011.
, Theoretical Investigation of Trigate AlGaN/GaN HEMTs, vol.60, p.33353341, 2013.
, Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, vol.6, p.14681473, 2006.
Simulation and Fabrication of GaN-Based Vertical and Lateral Normally-off Power Transistors, 2013. ,
« Push the Envelope: Design Concepts for Envelope-Tracking Power Amplifiers, IEEE Microwave Magazine, vol.14, p.6881, 2013. ,
« appliquée à un fonctionnement RF impulsionnel à plusieurs niveaux », thesis, 2015. ,
, High-Performance EMode AlGaN/GaN HEMTs with LT-GaN Cap Layer Using Gate Recess Techniques, p.129130, 2008.
, « Technology for Non-Recessed Short Gate Length E-Mode AlGaN/GaN High-Electron Mobility Transistors », présenté à CS MANTECH, p.4, 2008.
« Enhancement-mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation, p.4, 2010. ,
GaN HEMTs With Engineered Buffer for Normally Off Operation, IEEE Electron Device Letters, vol.29, issue.11, p.11841186, 2008. ,
« Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current, Journal of Semiconductors, vol.33, issue.6, p.64004, 2012. ,
, Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate, vol.31, p.192194, 2010.
« High transconductance enhancement-Ts on SiC substrate, Electronics Letters, vol.39, p.1758, 2003. ,
« Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment, Thin Solid Films, vol.547, p.106110, 2013. ,
High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor, IEEE Electron Device Letters, vol.31, issue.9, p.990992, 2010. ,
« Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation, Japanese Journal of Applied Physics, vol.48, 2009. ,
, Effect of fluoride plasma treatment on InAlN/GaN HEMTs, vol.44, p.696, 2008.
URL : https://hal.archives-ouvertes.fr/hal-00357798
« Submicron enhancement-mode AlGaN/GaN HEMTs, 60th DRC. Conference Digest Device Research Conference, p.2324, 2002. ,
, , p.210, 2018.
, Licence CC BY
« An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure, vol.6, p.13651368, 2009. ,
, High-performance E-mode AlGaN/GaN HEMTs, vol.27, p.428430, 2006.
« Gate-recessed integrated E/D GaN HEMT technology with ft/fmax >300 GHz, IEEE Electron Device Letters, vol.34, issue.6, p.741743, 2013. ,
, Monolithically integrated E/D-mode InAlN HEMTs with ft/fmax > 200/220 GHz, p.12, 2012.
« Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse, IEEE Electron Device Letters, vol.28, issue.3, p.189191, 2007. ,
« DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment, Journal of Semiconductors, vol.35, p.44002, 2014. ,
« High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications, 2010 International Electron Devices Meeting, 2010. ,
, Enhancement-Mode SiN/AlGaN/GaN MISHFETs, vol.27, p.793795, 2006.
« Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9A/mm Drain Current Density and 800-mS/mm Transconductance, IEEE Electron Device Letters, vol.31, p.13831385 ,
« Enhancement-Mode InAlN/AlN/GaN HEMTs With 1E-12 A/mm Leakage Current and 1E12 on/off Current Ratio, IEEE Electron Device Letters, vol.32, issue.3, p.309311, 2011. ,
, Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices », vol.414, p.232236, 2015.
« InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess, IEEE Electron Device Letters, vol.30, issue.11, p.11311133, 2009. ,
« Development of enhancement mode AlGaN/GaN MOS-HEMTs using localized gate-foot oxidation, The 5th European Microwave Integrated Circuits Conference, p.302305, 2010. ,
Dry Etching Technology for Semiconductors, 2015. ,
, Ohmic contacts to Gallium Nitride materials, vol.383, p.324345, 2016.
, SRIM-The stopping and range of ions in matter (2010) », Nuclear Instruments and Methods in Physics Research B, vol.268, p.18181823, 2010.
« Band offsets of high K gate oxides on III-V semiconductors, Journal of Applied Physics, vol.100, issue.1, p.14111, 2006. ,
« Proposed universal relationship between dielectric breakdown and dielectric constant, Digest. International Electron Devices Meeting, p.633636, 2002. ,
, , p.211, 2018.
, Licence CC BY
« Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends, Journal of Applied Physics, vol.113, issue.2, p.21301, 2013. ,
, AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by PEALD », présenté à 224th ECS Meeting, p.269277, 2013.
, Crystallization behavior of thin ALD-Al2O3 films, vol.425, p.216220, 2003.
, Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition, vol.49, p.80201, 2010.
« Growth of crystalline Al2O3 via thermal atomic layer deposition: Nanomaterial phase stabilization, APL Materials, vol.2, issue.3, p.32105, 2014. ,
, A Review of Dry Etching of GaN and Related Materials, vol.5, 2000.
, Gate-recessed normally-off GaN-on-Si HEMT using a new O2BCl3 digital etching technique », physica status solidi (c), vol.7, p.20102012, 2010.
« High-Performance Normally-off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique, IEEE Electron Device Letters, vol.34, issue.11, p.13701372, 2013. ,
« Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulatorsemiconductor-heterostructure capacitors, Journal of Applied Physics, vol.108, issue.1, p.14508 ,
« Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces », Journal of Applied Physics, vol.108, p.124101 ,
« Mos conductance technique for measuring surface state parameters, Appl. Phys. Lett, vol.7, issue.8, p.216219, 1965. ,
« Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique, Applied Physics Letters, vol.103, issue.3, p.33510, 2013. ,
Parameters which are Valid for Complex Source and Load Impedances, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES MTT, vol.42, issue.2, p.205, 1994. ,
« Caractérisation et modélisation des pièges par des mesures de dispersion basse-fréquence da puissance en gamme millimétrique », thesis, 2016. ,
« Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements, IEEE Transactions on Electron Devices, vol.60, issue.10, p.31663175, 2013. ,
, Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs, p.333336, 2012.
, , p.212, 2018.
, Licence CC BY
, Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors, vol.60, p.31903196, 2013.
Analysis of multiexponential functions without a hypothesis as to the number of components, Nature, vol.326, p.169174, 1987. ,
, , p.213, 2018.
, Licence CC BY
, Publications et communications
, Normally-off AlGaN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications, pp.65-68, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01432290
, Normallyoff InAlGaN/AlN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications, 2016.
, ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT, vol.37, p.629632, 2016.
, « Transistors HEMT normally-off, normally-on compatibles de la technologie nitrure de gallium pour des applications de puissance hyperfréquence, 2016.
, Normally-off/Normally-on HEMT suitable for AlGaN/GaN and In(Ga)AlN/GaN RF structures for high power microwave applications », 2016 Spring Meeting of the European Materials Research Society, 2016.