Fonction normally-on, normally-off compatible de la technologie HEMT GaN pour des applications de puissance, hyperfréquences

Linh Trinh Xuan 1
1 XLIM-SRF - Systèmes RF
XLIM - XLIM : SRF
Abstract : This document reports on research and development efforts towards a normally-on/normally-off integrated GaN HEMT technology that remains compatible with the material and processing dedicated to normally-on microwave devices. Following several theoretical considerations, the state-of-the-art is presented, which gives a perspective on the available technological solutions and helps define the specifications and the targeted applications. The development and optimization of new process steps enables the fabrication of gate-recessed MOS-HEMTs on epi-structures with AlGaN or (Ga)InAlN barrier, monolithically integrable with normally-on transistors. The samples are electrically characterized by means of standard measurements and more advanced trap spectroscopy techniques such as low-frequency S-parameters or RON transient monitoring. In spite of oxide-related trapping phenomena, the results are very promising: normally-off devices are obtained for both structures, and the performances are in line with literature accounts while identified possible improvements can be explored.
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Linh Trinh Xuan. Fonction normally-on, normally-off compatible de la technologie HEMT GaN pour des applications de puissance, hyperfréquences. Electronique. Université de Limoges, 2018. Français. ⟨NNT : 2018LIMO0106⟩. ⟨tel-02056773⟩

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