. .. De-forte-puissance, 96 4.1.1 Mesure de la réponse temporelle à une agression MFP, Réponse du circuit sous test aux impulsions

. , 100 4.2.3 Analyse de la destruction d'un point de vue temporel

. .. Analyse-de-défaillance,

. .. Conclusion,

, Chapitre 5

, Réduction de puissance de l'agression et effets non-destructifs

. , 118 5.1 Influence de la largeur d'impulsion sur le seuil de susceptibilité, p.118

. .. Phénomène-de-dégradation,

. .. Conclusion,

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G. Maxime, D. Tristan, D. Genevieve, and H. Patrick, EMC susceptibility analysis of an Op-Amp based circuit combining different technique, International Symposium on Electromagnetic Compatibility-EMC EUROPE-Wroclaw, vol.14, p.64, 2016.

G. Maxime, D. Tristan, D. Geneviève, and H. Patrick, Effets du stress électromagnétique sur un transistor p-HEMT GaAs. Assemblée générale du GDR Ondes, 2017.

M. Girard, T. Dubois, P. Hoffmann, and G. Duchamp, Effects of HPEM Stress on GaAs LowNoise Amplifier from Circuit to Component Scale. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01884917

M. Girard, T. Dubois, G. Duchamp, and P. Hoffmann, Effects of HPEM Stress on GaAs LowNoise Amplifier from Circuit to Component Scale. Microelectronics Reliability, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01884917

M. Girard, T. Dubois, G. Duchamp, and P. Hoffmann, Investigating HPEM effects on GaAs p-HEMT low-noise amplifier. AMEREM 2018, vol.31, p.139, 2018.

, HEMP High Altitude Elecromagnetic Pulse, issue.7

, HEMT High Electron Mobility Transistor. 1, 40, vol.41, p.111

, HPEM High Power Microwaves, vol.7, p.27

, ICP1 Input Compression Point (1 dB), vol.39, p.54

, IEC International Electrotechnical Comission. ix, vol.17, p.18

, IED Improvised Explosive Device, vol.12

, IEM Impulsion électromagnétique. 6-8, vol.12, p.66

, IEMI Intentionnal Electromagnetic Interference. 1, vol.14, p.15

, IEMN Impulsion électromagnétique d'origine nucléaire, vol.6, p.12

L. Low-noise, , vol.51, pp.139-141

, MESFET Metal Semiconductor Field Effect Transistor, vol.39, p.40

. Mfp-micro-ondes-de-forte-puissance, , vol.10, p.139

, MMIC Monolithic Microwave Integrated Circuit, vol.38, p.42

, MODFET Modulation Doped Field Effect Transistor, p.40

, MRAP Mine Resistant Ambush Protected, vol.12

, NDF Normalized Determinant Function, vol.53

, NEMP Nuclear Electromagnetic Pulse, issue.7

P. A. Power-amplifier, , vol.34, p.67

, pHEMT pseudomorphic High Electron Mobility Transistor. 41, vol.42, p.140

, PLL Phase Locked Loop

, PSK Phase Shift Keying, vol.36

, RDS Radio Data System, p.31

. Rf-radio-fréquence, , vol.1, p.76

. Rms-root-mean and . Square, , p.67

. Sf6-hexafluorure-de-soufre, , p.25

, SiGe Silicium Germanium (Silicon Germanium), p.41

, SNR Rapport signal-à-bruit. 1, 35, vol.36