Structure électronique des interfaces Co(OOOl)/MoS2 et Ni(lll)/WSe2 pour l'injection de spin dans un semi-conducteur bidimensionnel

Abstract : Transition metal dichalcogenide (TMDC) single layers like MoS2 or WSe2 are direct band gap two-dimensional semiconductors, with non-equivalent K and K' valleys in the first Brillouin zone. The degeneracy liftingbetween spin-up and spin-down energy bands induced by spin-orbit coupling is inverted between the K and K' valleys . Magnetic metallic contacts should allow spin-injection from a magnetic electrode to a TMDC single layer. The valley (K or K') and spin (up or down) indexes being strongly coupled, this should also allow to electrically select one of the valleys in TMDC-based spintronic or valleytronic deviees. In this Thesis, we have studied the physical properties of the Co(OOOl)/MoS2 and Ni(lll)/WSe2 interfaces with first-principles methods based on the density functional theory. We demonstrated that the TMDC single layers are covalently bound to the Co(OOOl) and Ni(lll) surfaces. We describe the atomic structure of these interfaces and the modification of the magnetic moments induced by charge transfer between interface atomes. The MoS2 and WSe2 single layers become metallic when they are covalently bound to the magnetic metals. We also calculated the spin-polarization at the Fermi level of the TMDC layers connected to th Co and Ni electrodes and the Schottky barrier height (difference between the Fermi level in the metallic phase of the TMDC below the magnetic contact and the bottom of the conduction band in a pure TMDC channel).
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Thomas Garandel. Structure électronique des interfaces Co(OOOl)/MoS2 et Ni(lll)/WSe2 pour l'injection de spin dans un semi-conducteur bidimensionnel. Physique [physics]. INSA de Toulouse, 2017. Français. ⟨NNT : 2017ISAT0030⟩. ⟨tel-02043243⟩

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