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Characterization and Modeling of Magnetoelectric Micro Sensors

Abstract : Magneto-electric (ME) sensors have been demonstrated as a promising alternative for the detection of weak magnetic signals with high sensitivity. To date, most applications focused on the use of bulk piezoelectric materials on which magnetostrictive thin films are deposited leading to millimeter-sized devices. The integration of such devices into micro-electro-mechanical systems (MEMS), bringing smaller size and lower power consumption, involves addressing several scientific issues ranging from the integration of active materials on silicon to the strong reduction in amplitude of generated signals related to the size reduction of the sensor.In this context, the first goal of this thesis work was to integrate high crystalline quality piezoelectric thin films on silicon.Pb(Zr ₓTi ₁ ₋₁)O₃ (PZT) with a morphotropic composition (x=0.52) having high electromechanical coupling factor was chosen. Silicon is a necessary template as it allows for the use of conventional clean room processes for the realization of the microsystem. The crystalline quality of the active films is directly linked to the buffer layers that promote the crystalline growth on silicon. For this purpose, Yttria-stabilized Zirconia (YSZ) was used in combination with CeO₂ and SrTiO₃ to allow further growth of epitaxial perovskites. The choice of the bottom electrode material (SrRuO₃ or La ₀ ,₆₆Sr₀₃₃MnO₃ in this work) further tunes the crystalline orientation of the PZT layer.To probe the potential of such PZT thin films for ME devices, the first step was to characterize the electromechanical properties of this material in a free standing cantilever structure. Under an applied electric field, the measured displacement of the epitaxial PZT-based cantilevers is characterized by a coefficient d₃₁ =-53pmV⁻¹ , a reduced value with respect to the bulk material but that can be enhanced by further optimizing the film growth. The second step consists in ascertaining the ability of the cantilever to be used as resonator. For that purpose, first characterizations of oscillators have been performed to extract the resonant frequencies and the associated quality factors. Then, the resonant frequency shift with DC bias-induced stress was measured. Finally, a magnetostrictive layer of TbFeCo was added on the PZT cantilevers to sense magnetic field based on the ME effect. The resulting resonant frequency shift with external applied magnetic field was characterized with a typical sensitivity of 10’s of µT.
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Submitted on : Friday, February 15, 2019 - 2:06:08 PM
Last modification on : Sunday, June 26, 2022 - 12:10:50 PM


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  • HAL Id : tel-02020758, version 1



Thi Ngoc Nguyen. Characterization and Modeling of Magnetoelectric Micro Sensors. Materials Science [cond-mat.mtrl-sci]. Université Paris Saclay (COmUE), 2018. English. ⟨NNT : 2018SACLS203⟩. ⟨tel-02020758⟩



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