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Solutions of subthreshold SRAM in ultra-wide-voltage range in advanced CMOS technologies for biomedical and wireless sensor applications

Abstract : Emergence of large Systems-On-Chip introduces the challenge of power management. Of the various embedded blocks, static random access memories (SRAM) constitute the angrier contributors to power consumption. Scaling down the power supply is one way to act positively on power consumption. One aggressive target is to enable the operation of SRAMs at Ultra-Low-Voltage, i.e. as low as 300 mV (lower than the threshold voltage of standard CMOS transistors). The present work concerned the proposal of SRAM bitcells able to operate at ULV and for advanced technology nodes (either CMOS bulk 28 nm or FDSOI 28 nm). The benchmarking of published architectures as state-of-the-art has led to propose two flavors of 10-transitor bitcells, solving the limitations due to leakage current and parasitic power consumption. Segmented read-ports have been used along with the required synchronous peripheral circuitry including original replica assistance, a dedicated unbalanced sense amplifier for ULV operation and dynamic forward back-biasing of SOI boxes. Experimental test chips are provided in previously mentioned technologies. A complete memory cut of 32 kbits (1024x32) has been designed with an embedded BIST block, able to operate at ULV. After a general introduction, the manuscript proposes the state-of-the-art in chapter two. The new 10T bitcells are presented in chapter 3. The sense amplifier along with the replica assistance is the core of chapter 4. The memory cut in FDSOI 28 nm is detailed in chapter 5. Results of the PhD have been disseminated with 4 patent proposals, 2 papers in international conferences, a first paper accepted in an international journal and a second but only submitted paper in an international journal.
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https://tel.archives-ouvertes.fr/tel-02003583
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Submitted on : Friday, February 1, 2019 - 12:19:10 PM
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  • HAL Id : tel-02003583, version 1

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Anis Feki. Solutions of subthreshold SRAM in ultra-wide-voltage range in advanced CMOS technologies for biomedical and wireless sensor applications. Electronics. INSA de Lyon, 2015. English. ⟨NNT : 2015ISAL0018⟩. ⟨tel-02003583⟩

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