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Depletion of CMOS pixel sensors : studies, characterization, and applications

Abstract : An architecture of CMOS pixel sensor allowing the depletion of the sensitive volume through frontside biasing is studied through the characterization in laboratory of a prototype. The charge collection performances confirm the depletion of a large part of the sensitive thickness. In addition, with a modest noise level, the sensor features an excellent energy resolution for photons below 20 keV at positive temperatures. These results demonstrate that such sensors are suited for soft X-ray spectroscopy and for charged particle tracking in highly radiative environment. A simplified analytical model and finite elements calculus are used to predict the depletion depth reached. An indirect measurement method to evaluate this depth is proposed. Measurements confirm predictions for a thin highly resistive epitaxial layer, which is fully depleted, and a 40micrometers thick bulk less resistive substrate, for which depletion reached 18 micrometers but which still offers correct detection over its full depth. Two sensor designs dedicated to X-ray imaging and in-brain neuroimaging on awake and freely moving rats are presented.
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  • HAL Id : tel-01998288, version 1



Julian Heymes. Depletion of CMOS pixel sensors : studies, characterization, and applications. Physics [physics]. Université de Strasbourg, 2018. English. ⟨NNT : 2018STRAE010⟩. ⟨tel-01998288⟩



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