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Damage accumulation and recovery in Xe implanted 4H-SiC

Abstract : Silicon carbide is a material that can be considered as a wide band gap semiconductor or as a ceramic according to its applications in microelectronics and in nuclear energy system (fission and fusion). In both fields of application defects or damage induced by ion implantation/ irradiation (doping, material structure) should be controlled. This work is a study of defects induced by noble gas implantation according to the implantation conditions (fluence and temperature). The elastic strain buildup, particularly in the case of xenon implantation, has been studied at elevated temperatures for which the dynamic recombination prevents the amorphization transition. A phenomenological model based on cascade recovery has been proposed to understand the strain evolution with increasing dose and for different noble gases. In addition, with the help of transmission electron microscopy the evolution of defects under subsequent annealing was studied. The formation of nanocavities was observed under severe implantation/annealing conditions. These cavities are of different nature (full of gas or empty) according to the xenon and damage distribution. This study is also linked to swelling properties under irradiation that should be projected in the SiC application fields.
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  • HAL Id : tel-01981737, version 1

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Chennan Jiang. Damage accumulation and recovery in Xe implanted 4H-SiC. Materials. Université de Poitiers, 2018. English. ⟨NNT : 2018POIT2251⟩. ⟨tel-01981737⟩

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