N. Jones, How to stop data centres from gobbling up the world's electricity, Nature, vol.561, issue.7722, pp.163-166, 2018.

A. Martin, Silicon Photonics : Enabling the Transition to 100Gb/s Networks, 2015.

S. Rune, K. N. Jacobsen, P. I. Andersen, J. Borel, L. H. Fage-pedersen et al., Christophe Peucheret, Beáta Zsigri, and Anders Bjarklev. Strained silicon as a new electro-optic material, Nature, vol.441, issue.7090, pp.199-202, 2006.

N. K. Hon, K. K. Tsia, D. R. Solli, B. Jalali, and J. B. , Khurgin. Stress-induced ?<sup>(2)</sup> in silicon-Comparison between theoretical and experimental values, 6th IEEE International Conference on Group IV Photonics, pp.232-234, 2009.

C. Schriever, C. Bohley, and R. B. Wehrspohn, Strain dependence of second-harmonic generation in silicon, Optics Letters, vol.35, issue.3, p.273, 2010.

B. Chmielak, M. Waldow, C. Matheisen, C. Ripperda, J. Bolten et al., Pockels effect based fully integrated, strained silicon electro-optic modulator, Optics Express, vol.19, issue.18, p.17212, 2011.

M. Cazzanelli, F. Bianco, E. Borga, G. Pucker, M. Ghulinyan et al., Secondharmonic generation in silicon waveguides strained by silicon nitride, Nature Materials, vol.11, issue.2, pp.148-154, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00739055

B. Chmielak, C. Matheisen, C. Ripperda, J. Bolten, T. Wahlbrink et al., Investigation of local strain distribution and linear electro-optic effect in strained silicon waveguides, Optics Express, vol.21, issue.21, p.25324, 2013.

M. W. Puckett, J. S. Smalley, M. Abashin, A. Grieco, and Y. Fainman, Tensor of the second-order nonlinear susceptibility in asymmetrically strained silicon waveguides : analysis and experimental validation, Optics Letters, vol.39, issue.6, p.1693, 2014.

, Bibliographie 142

P. Damas, X. L. Roux, D. L. Bourdais, E. Cassan, D. Marrismorini et al., Wavelength dependence of Pockels effect in strained silicon waveguides, Optics Express, vol.22, issue.18, p.22095, 2014.

C. Schriever, F. Bianco, M. Cazzanelli, M. Ghulinyan, C. Eisenschmidt et al., Second-Order Optical Nonlinearity in Silicon Waveguides : Inhomogeneous Stress and Interfaces, Advanced Optical Materials, vol.3, issue.1, pp.129-136, 2015.

S. Sharif-azadeh, F. Merget, M. P. Nezhad, and J. Witzens, On the measurement of the Pockels effect in strained silicon, Optics Letters, vol.40, issue.8, p.1877, 2015.

M. Borghi, M. Mancinelli, F. Merget, J. Witzens, M. Bernard et al., High-frequency electro-optic measurement of strained silicon racetrack resonators, Optics Letters, vol.40, issue.22, p.5287, 2015.

P. Damas, M. Berciano, G. Marcaud, C. A. Ramos, D. Marris-morini et al., Comprehensive description of the electro-optic effects in strained silicon waveguides, Journal of Applied Physics, vol.122, issue.15, p.153105, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01878844

I. Olivares, T. Angelova, and P. Sanchis, On the influence of interface charging dynamics and stressing conditions in strained silicon devices, Scientific reports, vol.7, issue.1, p.7241, 2017.

E. Timurdogan, C. V. Poulton, M. J. Byrd, and M. R. Watts, Electric field-induced second-order nonlinear optical effects in silicon waveguides, Nature Photonics, vol.11, issue.3, pp.200-206, 2017.

P. Damas, D. Marris-morini, E. Cassan, and L. Vivien, Bond orbital description of the strain-induced second-order optical susceptibility in silicon, Physical Review B, vol.93, issue.16, p.165208, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01523525

J. Cho, J. Yang, C. Lee, and J. Lee, Development of an energy evaluation and design tool for dedicated cooling systems of data centers : Sensing data center cooling energy efficiency, Energy and Buildings, vol.96, pp.357-372, 2015.

D. Thomson, A. Zilkie, J. E. Bowers, T. Komljenovic, T. Graham et al., Roadmap on silicon photonics, Journal of Optics, vol.18, issue.7, p.73003, 2016.

Z. Zhou, B. Yin, and J. Michel, On-chip light sources for silicon photonics, Light : Science & Applications, vol.4, issue.11, pp.358-358, 2015.

C. Guang-hua-duan, A. Jany, A. Le-liepvre, M. Accard, D. Lamponi et al.,

. Reed, Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon

, IEEE Journal of Selected Topics in Quantum Electronics, vol.20, issue.4, pp.158-170, 2014.

G. Roelkens, A. Abassi, P. Cardile, U. Dave, A. De-groote et al.,

S. Huang, S. Kumari, B. Keyvaninia, L. Kuyken, P. Li et al., Geert Morthier, Roel Baets, and Dries van Thourhout. III-Von-Silicon Photonic Devices for Optical Communication and Sensing, Photonics, vol.2, issue.3, pp.969-1004, 2015.

O. Bondarenko, C. Fang, F. Vallini, J. S. Smalley, and Y. Fainman, Extremely compact hybrid III-V/SOI lasers : design and fabrication approaches, Optics Express, vol.23, issue.3, p.2696, 2015.

S. Guang-hua-duan, C. Olivier, S. Jany, A. Malhouitre, A. Le-liepvre et al.,

B. Charbonnier, Hybrid III-V Silicon Photonic Integrated Circuits for Optical Communication Applications, IEEE Journal of Selected Topics in Quantum Electronics, vol.22, issue.6, pp.379-389, 2016.

T. Ferrotti, B. Blampey, C. Jany, H. Duprez, A. Chantre et al., Co-integrated 13µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s, Optics Express, vol.24, issue.26, p.30379, 2016.

, Bibliographie 144

D. Korn, M. Lauermann, S. Koeber, P. Appel, L. Alloatti et al., Lasing in silicon-organic hybrid waveguides, Nature Communications, vol.7, p.10864, 2016.

B. Dutt, D. S. Sukhdeo, D. Nam, B. M. Vulovic, Z. Yuan et al., Roadmap to an Efficient Germanium-on-Silicon Laser : Strain vs. n-Type Doping, IEEE Photonics Journal, vol.4, issue.5, pp.2002-2009, 2012.

D. S. Sukhdeo, H. Lin, D. Nam, Z. Yuan, B. M. Vulovic et al., Approaches for a viable Germanium laser : Tensile strain, GeSn alloys, and n-type doping, Optical Interconnects Conference, pp.112-113, 2013.

K. P. Homewood and M. A. Lourenço, The rise of the GeSn laser, Nature Photonics, vol.9, issue.2, pp.78-79, 2015.

M. Prost, M. E. Kurdi, A. Ghrib, S. Sauvage, X. Checoury et al., Tensile-strained germanium microdisk electroluminescence, Optics Express, vol.23, issue.5, p.6722, 2015.

M. E. Kurdi, M. Prost, A. Ghrib, A. Elbaz, S. Sauvage et al., Tensilestrained germanium microdisks with circular Bragg reflectors, Applied Physics Letters, vol.108, issue.9, p.91103, 2016.

S. Wirths, R. Geiger, N. Von-den-driesch, G. Mussler, T. Stoica et al., Lasing in direct-bandgap GeSn alloy grown on Si, Nature Photonics, vol.9, issue.2, pp.88-92, 2015.

V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord et al.,

, Sn lasing at 3.1 µm up to 180 K, Applied Physics Letters, vol.111, issue.9, p.92101, 2017.

W. Dou, Y. Zhou, J. Margetis, S. Amir-ghetmiri, W. Du et al., Optically Pumped GeSn-edge-emitting Laser with Emission at 3 µm for Si Photonics, Conference on Lasers and Electro-Optics, page AF1Q.5, 2018.

H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak et al., An all-silicon Raman laser, Nature, vol.433, issue.7023, pp.292-294, 2005.

H. Rong, R. Jones, A. Liu, O. Cohen, and D. Hak, Alexander Fang, and Mario Paniccia. A continuous-wave Raman silicon laser, Nature, vol.433, issue.7027, pp.725-728, 2005.

H. Rong, S. Xu, Y. Kuo, and V. Sih, Oded Cohen, Omri Raday, and Mario Paniccia. Low-threshold continuous-wave Raman silicon laser, Nature Photonics, vol.1, issue.4, pp.232-237, 2007.

T. Nils, . Otterstrom, E. A. Ryan-o-behunin, Z. Kittlaus, P. Wang et al., A silicon Brillouin laser, Science, vol.360, issue.6393, pp.1113-1116, 2018.

D. Wang, C. Zhang, P. Zeng, W. Zhou, L. Ma et al., An all-silicon laser based on silicon nanocrystals with high optical gains, Science Bulletin, vol.63, issue.2, pp.75-77, 2018.

G. Lepage, G. Roelkens, H. Chen, J. De, J. Coster et al., 100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors, Journal of Lightwave Technology, vol.35, issue.4, pp.722-726, 2017.

L. Virot, D. Benedikovic, B. Szelag, C. Alonso-ramos, B. Karakus et al., Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction, Optics Express, vol.25, issue.16, p.19487, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01800601

T. L. Paoli and J. E. Ripper, Direct modulation of semiconductor lasers, Proceedings of the IEEE, vol.58, issue.10, pp.1457-1465, 1970.

H. Ralph, On the theory of the Franz-Keldysh effect, Journal of Physics C : Solid State Physics, vol.1, issue.2, p.312, 1968.

D. Van-thourhout, G. Roelkens, G. Lepage, H. T. Chen, J. Van-campenhout et al., Philippe Absil, Shashank Gupta, and Srinivasan Ashwyn Srinivasan. 56 Gb/s Germanium Waveguide Electro-Absorption Modulator, Journal of Lightwave Technology, vol.34, issue.2, pp.419-424, 2016.

P. De-heyn, V. I. Kopp, S. A. Srinivasan, P. Verheyen, J. Park et al., Ultra-Dense 16x56Gb/s NRZ GeSi EAM-PD Arrays Coupled to Multicore Fiber for Short

, OSA, Optical Fiber Communication Conference, page Th1B.7, 2017.

J. Verbist, M. Verplaetse, S. A. Srivinasan, P. De-heyn, T. De-keulenaer et al., First Real-Time 100-Gb/s NRZ-OOK Transmission over 2 km with a Silicon Photonic Electro-Absorption Modulator, Optical Fiber Communication Conference Postdeadline Papers, vol.4, p.5, 2017.

A. Vyncke, G. Roelkens, G. Torfs, J. Bauwelinck, J. Van-campenhout et al., Real-Time 100 Gb/s NRZ and EDB Transmission With a GeSi Electroabsorption Modulator for Short-Reach Optical Interconnects, Journal of Lightwave Technology, vol.36, issue.1, pp.90-96, 2018.

Y. Tong, Q. Zhang, X. Wu, C. Chow, C. Shu et al., Integrated germanium-on-silicon Franz-Keldysh vector modulator used with a Kramers-Kronig receiver, Optics Letters, vol.43, issue.18, p.4333, 2018.

D. A. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann et al., Band-Edge Electroabsorption in Quantum Well Structures : The Quantum-Confined Stark Effect, Physical Review Letters, vol.53, issue.22, pp.2173-2176, 1984.

Y. Kuo, Y. K. Lee, Y. Ge, J. E. Shen-ren, and T. I. Roth,

D. A. Kamins, J. S. Miller, and . Harris, Strong quantum-confined Stark effect in germanium quantum-well structures on silicon, Nature, vol.437, issue.7063, pp.1334-1336, 2005.

M. Said-rouifed, P. Chaisakul, D. Marris-morini, J. Frigerio, G. Isella et al.,

, Ge/Si_035Ge_065 quantum-well structure, Optics Letters, vol.37, issue.19, p.3960, 2012.

M. Rouifed, D. Marris-morini, P. Chaisakul, J. Frigerio, G. Isella et al., Advances Toward Ge/SiGe Quantum-Well Waveguide Modulators at 1.3µm, IEEE Journal of Selected Topics in Quantum Electronics, vol.20, issue.4, pp.33-39, 2014.

G. Cocorullo, M. Iodice, and I. Rendina, All-silicon Fabry-Perot modulator based on the thermo-optic effect, Optics Letters, vol.19, issue.6, p.420, 1994.

G. Cocorullo, F. G. Della-corte, I. Rendina, and M. Pasqualina,

. Sarro, Thermo-optic effect exploitation in silicon microstructures, Sensors and Actuators A : Physical, vol.71, issue.1-2, pp.19-26, 1998.

D. Perez-galacho, R. Zhang, A. Ortega-monux, R. Halir, C. Alonso-ramos et al., Integrated Polarization Beam Splitter for 100/400 GE Polarization Multiplexed Coherent Optical Communications, Journal of Lightwave Technology, vol.32, issue.3, pp.361-368, 2014.

D. Perez-galacho, C. Baudot, T. Hirtzlin, S. Messaoudène, N. Vulliet et al., Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band, Optics Express, vol.25, issue.10, p.11217, 2017.

S. V. Govorkov, V. I. Emel&apos;yanov, N. I. Koroteev, G. I. Petrov, I. L. Shumay et al., Inhomogeneous deformation of silicon surface layers probed by second-harmonic generation in reflection, Journal of the Optical Society of America B, vol.6, issue.6, p.1117, 1989.

J. Y. Huang, Probing Inhomogeneous Lattice Deformation at Interface of <b> <i>S</i> <i>i</i> (111)/ <i>S</i> <i>i</i> <i>O</i> <sub>2</sub> </b> by Optical Second-Harmonic Reflection and Raman Spectroscopy, Japanese Journal of Applied Physics, vol.1, issue.7A, pp.3878-3886, 1994.

P. Damas, X. L. Roux, E. Cassan, D. Marris-morini, N. Izard et al., Analysis of second order nonlinear effects in strained silicon, Asia Communications and Photonics Conference, vol.8, p.2, 2013.

J. Witzens, Ab initio calculation of the deformation potential and photoelastic coefficients of silicon with a non-uniform finite-difference solver based on the local density approximation, Computer Physics Communications, vol.185, issue.8, pp.2221-2231, 2014.

R. Sharma, M. W. Puckett, H. Lin, F. Vallini, and Y. Fainman, Characterizing the effects of free carriers in fully etched, dielectric-clad silicon waveguides, Applied Physics Letters, vol.106, issue.24, p.241104, 2015.

E. Luppi, E. Degoli, M. Bertocchi, S. Ossicini, and V. Véniard, Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials, Physical Review B, vol.92, issue.7, p.75204, 2015.

C. L. Manganelli, P. Pintus, and C. Bonati, Modeling of strain-induced Pockels effect in Silicon, Optics Express, vol.23, issue.22, p.28649, 2015.

, Bibliographie 148

M. Berciano, G. Marcaud, P. Damas, X. L. Roux, P. Crozat et al.,

E. Morini, L. Cassan, and . Vivien, Fast linear electro-optic effect in a centrosymmetric semiconductor, Communications Physics, vol.1, issue.1, p.64, 2018.

R. Sutherland, D. G. Mclean, and S. Kirkpatrick, Handbook of nonlinear optics, 2003.

R. W. Boyd, Nonlinear optics, 2003.

, Lev Petrovich) Pitaevskiii. Theory of elasticity, 1986.

Y. Amenzade, Theory of Elasticity, 1979.

R. F. Smith, R. W. Minich, R. E. Rudd, J. H. Eggert, C. A. Bolme et al., Orientation and rate dependence in high strain-rate compression of single-crystal silicon, Physical Review B, vol.86, issue.24, p.245204, 2012.

C. Richard, Richard Conger) Powell. Symmetry, group theory, and the physical properties of crystals, 2010.

J. J. Wortman and R. A. Evans, Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium, Journal of Applied Physics, vol.36, issue.1, pp.153-156, 1965.

. Marius and . Grundmann, The physics of semiconductors : an introduction including devices and nanophysics, 2006.

U. Kumar-mishra and J. Singh, Semiconductor device physics and design, 2008.

S. M. Sze and K. Ng, Physics of semiconductor devices, 2007.

T. Tamir and E. M. Garmire, Integrated optics, 1979.

. Laurent, . Vivien, . Lorenzo, and . Pavesi, Handbook of silicon photonics, 2013.

R. Soref and B. Bennett, Electrooptical effects in silicon, IEEE Journal of Quantum Electronics, vol.23, issue.1, pp.123-129, 1987.

N. K. Hon, R. Soref, and B. Jalali, The third-order nonlinear optical coefficients of Si, Ge, and SiGe in the midwave and longwave infrared, Journal of Applied Physics, vol.110, issue.1, p.11301, 2011.

. Guangsheng, S. H. He, and . Liu, Physics of nonlinear optics, 1999.

D. M. Pozar, Microwave engineering, p.149, 2012.

R. C. Alferness, Waveguide Electrooptic Modulators. IEEE Transactions on Microwave Theory and Techniques, vol.30, pp.1121-1137, 1982.

L. Em-resist, Unit 3, Hayloft, Normans Hall Farm

J. Komma, C. Schwarz, G. Hofmann, D. Heinert, and R. Nawrodt, Thermo-optic coefficient of silicon at 1550 nm and cryogenic temperatures, Applied Physics Letters, vol.101, issue.4, p.41905, 2012.

D. Yu, Y. Zhang, and F. Liu, First-principles study of electronic properties of biaxially strained silicon : Effects on charge carrier mobility, Physical Review B, vol.78, issue.24, p.245204, 2008.

M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, Six-band kp calculation of the hole mobility in silicon inversion layers : Dependence on surface orientation, strain, and silicon thickness, Journal of Applied Physics, vol.94, issue.2, pp.1079-1095, 2003.

E. Ungersboeck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina et al., The Effect of General Strain on the Band Structure and Electron Mobility of Silicon, IEEE Transactions on Electron Devices, vol.54, issue.9, pp.2183-2190, 2007.

Y. M. Niquet, D. Rideau, C. Tavernier, H. Jaouen, and X. Blase, Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal : Application to silicon, germanium, and their alloys, Physical Review B, vol.79, issue.24, p.245201, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00992736

J. Kim, Band Structure Calculations of Strained Semiconductors Using Empirical Pseudopotential Theory. Open Access Dissertations, 2011.

D. Benedikovic, P. Cheben, J. H. Schmid, D. Xu, J. Lapointe et al., High-efficiency single etch step apodized surface grating coupler using subwavelength structure, Laser & Photonics Reviews, vol.8, issue.6, pp.93-97, 2014.

D. Benedikovic, P. Cheben, J. H. Schmid, D. Xu, B. Lamontagne et al.,

, sub-decibel efficiency for 220-nm silicon-on-insulator waveguides, Optics Express, vol.23, issue.17, p.22628, 2015.

P. Cheben, J. H. Schmid, R. Halir, A. Sanchez-postigo, D. Xu et al., Subwavelength Index Engineered Waveguides and Devices, Optical Fiber Communication Conference, vol.2, p.3, 2017.

P. Cheben, R. Halir, J. H. Schmid, H. A. Atwater, and D. R. Smith, Subwavelength integrated photonics, Nature, vol.560, issue.7720, pp.565-572, 2018.

D. Marcuse, Loss Analysis of Single-Mode Fiber Splices, Bell System Technical Journal, vol.56, issue.5, pp.703-718, 1977.

M. Bachmann, P. A. Besse, and H. Melchior, General self-imaging properties in NxN multimode interference couplers including phase relations, Applied Optics, vol.33, issue.18, p.3905, 1994.

L. B. Soldano and E. C. Pennings, Optical multi-mode interference devices based on self-imaging : principles and applications, Journal of Lightwave Technology, vol.13, issue.4, pp.615-627, 1995.

D. J. Thomson, Y. Hu, G. T. Reed, and J. Fedeli, Low Loss MMI Couplers for High Performance MZI Modulators, IEEE Photonics Technology Letters, vol.22, issue.20, pp.1485-1487, 2010.

S. Uviii, Positive DUV Photo Resists

H. B. Profijt, S. E. Potts, M. C. Van-de-sanden, and W. M. Kessels, PlasmaAssisted Atomic Layer Deposition : Basics, Opportunities, and Challenges, Journal of Vacuum Science & Technology A : Vacuum, Surfaces, and Films, vol.29, issue.5, p.50801, 2011.

M. Bosund, T. Sajavaara, M. Laitinen, T. Huhtio, M. Putkonen et al., Properties of AlN grown by plasma enhanced atomic layer deposition, Applied Surface Science, vol.257, issue.17, pp.7827-7830, 2011.

H. Kim and I. Oh, Review of plasma-enhanced atomic layer deposition : Technical enabler of nanoscale device fabrication, Japanese Journal of Applied Physics, vol.53, issue.3S2, pp.3-4, 2014.

T. Suhara and M. Fujimura, Waveguide Nonlinear-Optic Devices, volume 11 of Springer Series in Photonics, p.152, 2003.

S. Afshar, V. , and T. M. Monro, A full vectorial model for pulse propagation in emerging waveguides with subwavelength structures part I : Kerr nonlinearity, Optics Express, vol.17, issue.4, p.2298, 2009.

D. Benedikovic, M. Berciano, C. Alonso-ramos, X. L. Roux, E. Cassan et al., Dispersion control of silicon nanophotonic waveguides using sub-wavelength grating metamaterials in near-and midIR wavelengths, Optics Express, vol.25, issue.16, p.19468, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01800600

P. Damas, M. Berciano, G. Marcaud, C. A. Ramos, D. Marris-morini et al., Comprehensive description of the electro-optic effects in strained silicon waveguides, Journal of Applied Physics, vol.122, issue.15, p.153105, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01878844

G. Marcaud, S. Matzen, C. Alonso-ramos, X. L. Roux, M. Berciano et al., High-quality crystalline yttria-stabilized-zirconia thin layer for photonic applications, Physical Review Materials, vol.2, issue.3, p.35202, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01801073

M. Berciano, G. Marcaud, P. Damas, X. L. Roux, P. Crozat et al.,

E. Morini, L. Cassan, and . Vivien, Fast linear electro-optic effect in a centrosymmetric semiconductor, Communications Physics, vol.1, issue.1, p.64, 2018.

D. González-andrade, C. Lafforgue, E. Durán-valdeiglesias, X. L. Roux, M. Berciano et al., Polarization and wavelength agnostic nanophotonic beam splitter, 2018.

P. Damas, X. Le-roux, M. Berciano, C. A. Ramos, G. Marcaud et al.,

E. Cassan and L. Vivien, Pockels effect in strained silicon, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01527448

P. Damas, M. Berciano, X. Le-roux, P. Crozat, C. A. Ramos et al., Study of Pockels effect in strained silicon, European Material Research Society (EMRS), 2016.
URL : https://hal.archives-ouvertes.fr/hal-01803058

P. Damas, X. Le-roux, M. Berciano, G. Marcaud, C. A. Ramos et al., Strain engineering of Pockels effect in silicon waveguides, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01527440

P. Damas, X. Le-roux, M. Berciano, G. Marcaud, C. A. Ramos et al., Strained silicon photonics : Recent advances. European Conference in Integrated Optics (ECIO), 2016.
URL : https://hal.archives-ouvertes.fr/hal-01527453

P. Damas, X. Le-roux, M. Berciano, G. Marcaud, C. A. Ramos et al., Silicon photonics for low power consumptions communications, Emerging Technology CMOS, 2016.

P. Damas, X. Le-roux, M. Berciano, G. Marcaud, C. A. Ramos et al., Strained silicon photonics : Recent advances. International Conference on Transparent Optical Networks (ICTON), 2016.
URL : https://hal.archives-ouvertes.fr/hal-01527453

P. Damas, X. Le-roux, M. Berciano, G. Marcaud, C. A. Ramos et al., Advances in second-order nonlinear effect in silicon, OptoElectronics and Communications Conference (OECC), 2016.
URL : https://hal.archives-ouvertes.fr/hal-01527372

M. Berciano, P. Damas, X. Le-roux, P. Crozat, G. Marcaud et al., Study of Pockels effect in strained silicon. ePIXfab-plat4M Summer School, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01803058

P. Damas, X. Le-roux, M. Berciano, G. Marcaud, C. A. Ramos et al., Advances in Pockels effect in silicon, Communications dans des congrès internationaux Symposium on Opto-and Microelectronic Devices and Circuits (SODC), 2016.

D. T. Phuong, L. Vuu-hai-nam, M. Berciano, X. Le-roux, L. Vivien et al., Silicon optical micro-ring resonator dedicated to optoelectronic oscillator, Advanced Materials Science and Nanotechnology, 2016.

L. Vivien, D. Marris-morini, E. Cassan, P. Chaisakul, L. Virot et al., Recent advances in silicon photonics. Nanophotonics and Micro/Nano Optics International Conference (NANOP), 2016.
URL : https://hal.archives-ouvertes.fr/hal-01527370

P. Damas, X. Le-roux, M. Berciano, G. Marcaud, C. A. Ramos et al., Second-order nonlinearities in strained silicon photonic structures, SPIE Photonics West, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01527436

G. Marcaud, S. Matzen, C. A. Ramos, X. Le-roux, M. Berciano et al., Functional oxides on silicon and sapphire substrates for photonic applications. Towards oxide-based Electronics (TO-BE), 2017.
URL : https://hal.archives-ouvertes.fr/hal-01527612

M. Berciano, P. Damas, X. Le-roux, G. Marcaud, P. Crozat et al., Pockels effect in strained silicon waveguides. European Conference in Integrated Optics (ECIO), 2017.
URL : https://hal.archives-ouvertes.fr/hal-01802963

D. Benedikovic, C. A. Ramos, M. Berciano, X. Le-roux, E. Cassan et al., Dispersion controlling in strained silicon waveguides using sub-wavelength grating metamaterials, European Conference in Integrated Optics (ECIO), 2017.
URL : https://hal.archives-ouvertes.fr/hal-01527630

M. Berciano, P. Damas, G. Marcaud, X. Le-roux, P. Crozat et al., Pockels effect in strained silicon photonics. SPIE Optics and Optoelectronics, 2017.

G. Marcaud, S. Matzen, C. A. Ramos, X. Le-roux, M. Berciano et al., Functional oxides induces strain for silicon photonics applications. SPIE Optics and Optoelectronics, 2017.

M. Berciano, P. Damas, G. Marcaud, X. Le-roux, P. Crozat et al., Strain-induced Pockels effect in silicon waveguides, SPIE Microelectronics, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01802962

G. Marcaud, S. Matzen, C. A. Ramos, X. Le-roux, M. Berciano et al., Communications dans des congrès internationaux, p.156

L. Vivien, Functional oxides for silicon and sapphire substrates for photonic applications. Photonics North, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01527612

M. Berciano, P. Damas, G. Marcaud, X. Le-roux, P. Crozat et al., , 2017.

M. Berciano, P. Damas, G. Marcaud, X. Le-roux, P. Crozat et al., Study of pockels effect in strained silicon, International OSA Network of Students (IONS), 2017.
URL : https://hal.archives-ouvertes.fr/hal-01803058

D. Benedikovic, M. Berciano, X. Le-roux, V. Vakarin, G. Marcaud et al., Sub-wavelength silicon grating metamaterial ring resonators, Group Four Photonics (GFP), 2017.
URL : https://hal.archives-ouvertes.fr/hal-01800598

M. Berciano, P. Damas, G. Marcaud, X. Le-roux, P. Crozat et al., Strained silicon photonics for Pockels effect based modulation, Group Four Photonics (GFP), 2017.
URL : https://hal.archives-ouvertes.fr/hal-01803049

M. Berciano, G. Marcaud, P. Damas, X. Le-roux, P. Crozat et al., High-speed Pockels effect in strained silicon waveguide, SPIE Photonics West, 2018.

G. Marcaud, S. Serna, S. Matzen, C. A. Ramos, X. Le-roux et al.,

P. Morini, L. Lecoeur, and . Vivien, Functional oxide waveguides for linear and nonlinear optics, Material Research Society (MRS), 2018.

M. Berciano, G. Marcaud, P. Damas, X. Le-roux, P. Crozat et al., High-speed characteristics of strained-induced Pockels effect in silicon, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01802958

G. Marcaud, S. Serna, S. Matzen, C. A. Ramos, X. Le-roux et al.,

P. Morini, L. Lecoeur, and . Vivien, Functional oxide waveguides for nonlinear optics, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01801140

M. Berciano, G. Marcaud, P. Damas, X. Le-roux, P. Crozat et al., Demonstration of Pockels effect in strained silicon waveguides, 2018.

G. Marcaud, S. Serna, S. Matzen, C. A. Ramos, X. Le-roux et al.,

P. Morini, L. Lecoeur, and . Vivien, Yttria-stabilized-zirconia waveguides for linear and nonlinear optics, European Material Research Society (EMRS), 2018.
URL : https://hal.archives-ouvertes.fr/hal-01801168

M. Berciano, G. Marcaud, P. Damas, X. Le-roux, P. Crozat et al., Optical Communications dans des congrès internationaux, p.157

, nonlinearities in strained silicon. International Conference on Transparent Optical Networks (ICTON), 2018.