Gallium nitride devices for power electronic applications, Semiconductor Science and Technology, vol.28, pp.74011-74012, 2013. ,
AlGaN/GaN HEMTs-an overview of device operation and applications, Proceedings of the IEEE, vol.90, issue.6, pp.1022-1031, 2002. ,
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives, IEEE Transactions on Device and Materials Reliability, vol.8, issue.2, pp.332-343, 2008. ,
GaN-Based RF Power Devices and Amplifiers, Proceedings of the IEEE, vol.96, issue.2, pp.287-305, 2008. ,
Advances in HEMT Technology and Applications, IEEE MTT-S International Microwave Symposium Digest, 1987. ,
The early history of the high electron mobility transistor (HEMT), IEEE Transactions on Microwave Theory and Techniques, vol.50, issue.3, pp.780-782, 2002. ,
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, Journal of Applied Physics, vol.87, issue.1, pp.334-344, 2000. ,
, Etudes expérimentales de transistors HFET de la filière Nitrure de Gallium pour des applications de puissance hyperfréquences, 2003.
A survey of Gallium Nitride HEMT for RF and high power applications, Superlattices and Microstructures, vol.109, pp.519-537, 2017. ,
Raman scattering in GaN, AlN and AlGaN. Basic material properties, processing and devices, 2002. ,
Thermal Conductivity of Silicon from 300 to 1400 K, Physical Review Letters, vol.130, issue.5, pp.1743-1748, 1963. ,
Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT under Radar-Type Operating Life, IEEE Transactions on Microwave Theory and Techniques, vol.64, issue.3, pp.756-766, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01299413
, Matériaux semi-conducteurs à grand gap III-V à base de GaN », Techniques de l'Ingénieur, pp.1995-1996, 1999.
Measurement of channel temperature in GaN high-electron mobility transistors, IEEE Transactions on Electron Devices, vol.56, issue.12, pp.2895-2901, 2009. ,
Self-Heating in High-Power AlGaN-GaN HFETs, IEEE Electron Device Letters, vol.19, issue.3, pp.89-91, 1998. ,
Lifetesting GaN HEMTs with Multiple Degradation Mechanisms, IEEE Transactions on Device and Materials Reliability, vol.15, issue.4, pp.486-494, 2015. ,
, Gestio theeiue des oposaats dleettoiue de puissaae-Utilisation du diamant CVD, 2012.
Mooees Laa: Pedito aad Diee of the Silio Ea, World Neurosurgery, vol.78, issue.5, pp.399-403, 2012. ,
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing, Microelectronics Reliability, vol.55, pp.2505-2510, 2015. ,
Etude des aspects électrothermiques de la filière HEMT AlGaN/GaN pour application de puissance hyperfréquence, 2004. ,
« Modélisation et caractérisation thermique de transistors de puissance hyperfréquence GaN et conséquences sur la fiabilité de modules radars d'émission/réception en bande X, 2015. ,
High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks, Thesis Dissertation, UC, 2014. ,
, Cottiutio au deloppeeet due filie de ttaasisto de fote puissaae à base de technologie HEMT GaN pour applications télécoms et radar, 2009.
Etude par microspectrométrie Raman de matériau et de composant microélectronique à base de semi-conducteur III-V grand gap, 2009. ,
A temperature and pressure dependent Raman scattering study of III-nitride, icosahedral boride semiconductors and their devices, 2006. ,
Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods, 2013. ,
Impact of bias and device structure on gate junction temperature in AlGaN/GaN-on-Si HEMTs, IEEE Transactions on Electron Devices, vol.61, issue.5, pp.1327-1334, 2014. ,
Reliable and power-aware architectures: Fundamentals and modeling, pp.9-37, 2017. ,
DOI : 10.1016/b978-0-12-802459-1.00002-6
Temperature measurement of semiconductor devices-A review, 20th Annual IEEE Semiconductor Thermal Measurement and Management SymposiumProceedings, vol.20, pp.70-80, 2004. ,
, Semi-conducteur de puissance-problèmes thermiques (partie 2) », Techniques de l'Ingénieur, vol.3113, pp.1-14, 2003.
, Transferts thermiques, Introduction aux transferts d'énergie», Dunod, p.5, 2014.
Introduction to heat transfer, p.3, 1996. ,
, Transferts thermiques, mécanique des fluides anisothermes », Dunod, p.5, 2014.
Second principle of thermodynamics, direction of heat flow and Fourier inequality : a comparative assessment, International Journal of Non-Linear Mechanics, vol.19, issue.5, pp.445-454, 1984. ,
, « Physique des semiconducteurs et des composants électroniques », Dunod, p.6, 2009.
High breakdown voltage AlGaNGaN HEMTs achieved by multiple field plates, IEEE Electron Device Letters, vol.25, issue.4, pp.161-163, 2004. ,
Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations, Journal of Applied Physics, vol.86, issue.17, pp.173503-173504, 2006. ,
Multiscale Modeling of Thermal Transport in Gallium Nitride Microelectronics, 2009. ,
, Les cristaux liquides, 2006.
An experimental study of the interface temperature at free convective flow using liquid crystal thermography, 2002. ,
Temperature Field Measurements with High Spatial and Temporal Resolution Using Liquid Crystal Thermography and Laser Induced Fluorescence, 2010. ,
, Cours : mesures de la température
Handbook of Thermochromic Liquid Crystal Technology, LCR Hallcrest, 2014. ,
Introduction to liquid cristal thermography ,
, Imagerie thermique et thermoélastique de circuits intégrés : Application à l'analyse de défaillances, 2006.
Evaluation des performances de l'imagerie thermique par fluorescence pour l'analyse de défaillance des Flip Chips, 1999. ,
High resolution temperature mapping of microelectronic structures using quantitative fluorescence microthermography, Microelectronics Journal, vol.29, issue.4, pp.163-170, 1998. ,
Fluorescent microthermographic imaging, International Symposium on Testing and Failure Analysis, 1993. ,
Temperature Measurement, 2001. ,
« Développement d'une nouvelle méthode de caractérisation électrochimique de transistors en nitrure de gallium, Canada, 2015. ,
Electrothermal Mapping of AlGaN/GaN HEMTs Using Microresistance Thermometer Detectors, IEEE Electron Device Letters, vol.36, issue.2, pp.111-113, 2015. ,
Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices, IEEE Electron Device Letters, vol.29, issue.5, pp.416-418, 2008. ,
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy, IEEE Electron Device Letters, vol.23, issue.1, pp.7-9, 2002. ,
Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices, IEEE Transactions on Electron Devices, vol.54, issue.12, pp.3152-3158, 2007. ,
Thermal mapping of a scanning thermal microscopy tip, Ultramicroscopy, vol.133, pp.80-87, 2013. ,
SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices, IEEE Transactions on Electron Devices, vol.54, issue.3, pp.385-390, 2007. ,
Qualitative Temperature Variation Imaging by Thermoreflectance and SThM Techniques, TIMA EDITIONS / Therminic, vol.1, pp.284-289, 2005. ,
URL : https://hal.archives-ouvertes.fr/hal-00189487
Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement, 2004. ,
URL : https://hal.archives-ouvertes.fr/hal-00142308
Micro-nano scale thermal imaging using scanning probe microscopy, NanoScience and Technology, 2004. ,
DOI : 10.1007/978-3-642-35792-3_11
Standard-based direct calibration method for scanning thermal microscopy nanoprobes, Sensors and Actuators, A: Physical, vol.214, pp.1-6, 2014. ,
DOI : 10.1016/j.sna.2014.03.035
« Imagerie thermique par microscopie en champ proche à sonde fluorescente, 2009. ,
Two new microscopical variants of thermomechanical modulation: scanning thermal expansion microscopy and dynamic localized thermomechanical analysis, Journal of microscopy, vol.199, issue.3, pp.180-190, 2000. ,
New developments in thermal wave microscopy, Analytical Sciences/Supplements, vol.17, issue.0, pp.53-56, 2002. ,
Near-field thermoelastic imaging coupled with infrared detection, Superlattices and Microstructures, vol.35, pp.297-304, 2004. ,
URL : https://hal.archives-ouvertes.fr/hal-00117149
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits, Microelectronics Reliability, vol.52, pp.2093-2097, 2012. ,
Study of Self-Heating Effects in GaN HEMTs, Thesis Dissertation, 2013. ,
« Caractérisation et Modélisation de Transistors HEMT AlGaN/GaN et InAlN/GaN pour l'Amplification de puissance en Radio-Fréquences, p.221, 2011. ,
« Potentialités des transistors HEMTs AlGaN/GaN pour l'amplification large bande de fréquence ; effets limitatifs et modélisation, 2011. ,
Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy, Materials Science and Engineering C, vol.26, issue.2, pp.383-386, 2006. ,
URL : https://hal.archives-ouvertes.fr/hal-00154931
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy, Microelectronics Reliability, vol.51, pp.1796-1800, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00795891
Method and device to measure the temperature of microwave component, Brevet Thales Air Systems, Brevet US006431749B1, 2002. ,
Thermal conductivity of GaN, 25-360 K, Journal of Physics and Chemistry of Solids, vol.38, issue.3, p.330, 1977. ,
Thermochemical properties of inorganic substances, 1977. ,
Properties of Silicon Carbide, 1995. ,
, Ioffe Physico-Technical Institute
Characterization and analysis of electrical traps related effects on the reliability of AlInN/GaN HEMTs, Microelectronics Reliability, vol.55, pp.1719-1723, 2015. ,
« Caractérisation et modélisation des effets de pièges et thermique des transistors à effet de champ sur AsGa : Application à la simulation de la dynamique lente des circuits microondes, 1999. ,
« Contribution à la modélisation non-linéaire de transistors de puissance HEMT pseudomorphiques sur substrat AsGa : analyse et effets parasites, 2008. ,
A new evaluation method of thermal transient measurement, Microelectronics Journal, vol.28, issue.3, pp.277-292, 1997. ,
Deep Levels Characterization in GaN HEMTs-Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy, IEEE Transactions on Electron Devices, vol.60, issue.10, pp.3176-3182, 2013. ,
, Quantum Focus Instruments Corporation
Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography, Sensors, vol.12, issue.12, pp.4648-4660, 2012. ,
, Spectroscopie dans l'infrarouge, pp.2845-2846, 2000.
Emissivity measurements and modeling of silicon related materials and structures, Thesis Dissertation, 1998. ,
, Emissivity of Electronic Materials, Coatings, and Structures, vol.66, pp.616-636, 2014.
Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy, Optics Communications, vol.291, pp.104-109, 2013. ,
Integrated microRaman/Infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures, IEEE Transactions on Electron Devices, vol.53, issue.10, pp.2438-2447, 2006. ,
CCD-based thermoreflectance microscopy: principles and applications, Journal of Physics D: Applied Physics, vol.42, issue.14, pp.143001-143002, 2009. ,
DOI : 10.1088/0022-3727/42/14/143001
, Structures des bandes et spectres optiques des solides non conducteurs », vol.28, pp.3-12, 1967.
Quantification of thermoreflectance temperature measurements in high-power semiconductor devices-lasers and laser bars, Microelectronics Journal, vol.40, issue.9, pp.1373-1378, 2009. ,
Quantitative thermal imaging by synchronous thermoreflectance with optimized illumination wavelengths, Applied Physics Letters, vol.78, issue.16, pp.2267-2269, 2001. ,
DOI : 10.1063/1.1363696
, Imagerie thermique de composants actifs: Plus de détails sur la thermoréflectance
Concentration dependence of the refractive index for nAnd p-type GaAs between 1.2 and 1.8 eV, Journal of Applied Physics, vol.45, issue.6, pp.2650-2657, 1974. ,
Thermo-Reflectance Thermography For Submicron Temperature Measurements ,
« Perception et confort acoustiques des systèmes de traitement d'air, 2013. ,
Thermoreflectance CCD imaging of self heating in AlGaN/GaN high electron mobility power transistors at high drain voltage, Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 28th Annual IEEE, 2012. ,
Through the substrate, backside thermal measurements on active semiconductor devices using near IR thermoreflectance, IEEE Semiconductor Thermal Measurement and Management Symposium, 2004. ,
High Resolution Thermal Characterization and Simulation of Power AlGaN/GaN HEMTs Using Micro-Raman Thermography and 800 Picosecond Transient Thermoreflectance Imaging, Compound Semiconductor Integrated Circuit Symposium (CSICS), 2014. ,
Fast transient thermoreflectance CCD imaging of pulsed self heating in AlGaN/GaN power transistors, Reliability Physics Symposium (IRPS), IEEE International, 2013. ,
Analysis of heat flow in layered structures for time-domain thermoreflectance, Review of Scientific Instruments, vol.75, issue.12, pp.5119-5122, 2004. ,
An optical pump-probe technique for measuring the thermal conductivity of liquids, Review of Scientific Instruments, vol.79, issue.6, pp.64902-64903, 2008. ,
Determination of Thermophysical Properties of Si/SiGe Superlattices with a Pump-Probe Technique, THERMINIC 2005, 2005. ,
URL : https://hal.archives-ouvertes.fr/hal-00189478
Influence of Transparent Surface Layer on Effective Thermoreflectance Coefficient of Typical Stacked of Electronic Structures, 2007. ,
URL : https://hal.archives-ouvertes.fr/hal-00202547
Measuring and predicting the thermoreflectance sensitivity as a function of wavelength on encapsulated materials, Review of Scientific Instruments, vol.74, issue.1, pp.495-499, 2003. ,
A new radiation, Indian Journal of Physics, vol.2, issue.23, pp.387-398, 1928. ,
Sir Chandrasekhara Venkata Raman-Biographical ,
, Techniques de l'Ingénieur, pp.2865-2866, 1999.
Raman spectroscopy ,
, , 1995.
Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods, 2013. ,
Anharmonic effects in light scattering due to optical phonons in silicon, Physical Review B, vol.28, issue.4, pp.1928-1934, 1983. ,
Temperature dependance of the E2 and A1(LO) phonons in GaN and AlN, Journal of Applied Physics, vol.86, issue.11, pp.6256-6260, 1999. ,
Raman scattering from solid silicon at the melting temperature, Physical Review B, vol.29, issue.10, pp.6005-6007, 1984. ,
Nanosecond timeresolved Raman thermography: probing device and channel temperature in pulsed-operated GaN and GaAs HEMTs, CS MANTECH Conference, 2008. ,
Introduction to Infrared and Raman Spectroscopy, 1990. ,
Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy, Review of Scientific Instruments, vol.78, issue.6, pp.61301-61302, 2007. ,
Noncontact temperature measurements of diamond by Raman scattering spectroscopy, Journal of Applied Physics, vol.83, issue.12, pp.7929-7933, 1998. ,
Temperature dependance of Raman scattering in single crystal GaN films, Applied Physics Letters, vol.74, issue.21, pp.3125-3127, 1999. ,
Micro-Raman thermometry in the presence of complex stresses in GaN devices, Journal of Applied Physics, vol.103, issue.12, pp.124501-124502, 2008. ,
, Mesures de contraintes par spectroscopie et imagerie Raman dans des dispositifs micro-électroniques, 2006.
Raman Spectroscopy-What factors affect spectral resolution in a Raman spectrometer? ,
Spatial resolution in infrared microspectroscopic imaging of tissues, Biochimica et Biophysica Acta (BBA)-Biomembranes, vol.1758, issue.7, p.225, 2006. ,
Development of timeresolved UV Micro-Raman spectroscopy to measure temperature in AlGaN/GaN HEMTs, Solid-State Electronics, vol.54, issue.11, pp.1434-1437, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-00549461
The electronic structure of SiNx: the valence band DOS and band gaps, Journal of Physics C: Solid State Physics, vol.21, pp.555-560, 1988. ,
Energy band bowing parameter in AlxGa??N alloys, Journal of Applied Physics, vol.92, issue.8, pp.4837-4839, 2002. ,
, Spectroscopie Raman résonante UV in situ à haute température ou à haute pression, 2012.
Resonance Raman Intensity Analysis of Excited-State Dynamics, Accounts of Chemical Research, vol.30, issue.12, pp.519-527, 1997. ,
Raman and Luminescence Spectroscopy for Microelectronics : Catalogue of optical and physical parameters "Nostradamus" project SMT4-CT-95-2024, European commission, 1998. ,
Self-Heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy, IEEE Transactions on Electron Devices, vol.62, issue.5, pp.1467-1472, 2015. ,
Raman-IR microThermography Tool for Reliability and Failure Analysis of Electronic Devices, 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2008. ,
Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias, Applied Physics Letters, vol.88, issue.10, pp.103502-103503, 2006. ,
Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures, Review of Scientific Instruments, vol.84, issue.11, pp.113108-113109, 2013. ,
Confocal Raman depth-scanning spectroscopic study of phononplasmon modes in GaN epilayers, Journal of Applied Physics, vol.109, issue.12, pp.123528-123529, 2011. ,
Three-dimensional thermal analysis of a flip-chip mounted AlGaN/GaN HFET using confocal micro-Raman spectroscopy, IEEE Transactions on Electron Devices, vol.53, issue.10, pp.2658-2661, 2006. ,
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control, Surface and Interface Analysis, vol.31, issue.10, pp.987-999, 2001. ,
High spatial resolution Raman thermometry analysis of TiO2 microparticles, Review of Scientific Instruments, vol.84, issue.10, pp.104906-104907, 2013. ,
URL : https://hal.archives-ouvertes.fr/in2p3-00920378
Diamond micro-Raman thermometers for accurate gate temperature measurements, Applied Physics Letters, vol.104, issue.21, pp.213503-213504, 2014. ,
Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman microscopy, IEEE Electron Device Letters, vol.28, issue.2, pp.86-89, 2007. ,
DOI : 10.1109/led.2006.889215
Imagerie Raman de matriaux et dispositifs htrognes, pp.1-13, 2002. ,
MicroRaman Study of Wurtzite AlN Layers Grown on Si(111), Physica Status Solidi (A) Applied Research, vol.188, issue.2, pp.511-514, 2001. ,
DOI : 10.1002/1521-396x(200112)188:2<511::aid-pssa511>3.0.co;2-2
Thermometry of AlGaN/GaN HEMTs using multispectral raman features, IEEE Transactions on Electron Devices, vol.60, issue.6, pp.1898-1904, 2013. ,
DOI : 10.1109/ted.2013.2255102
Contributed review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy, Review of Scientific Instruments, vol.87, issue.6, pp.61501-61502, 2016. ,
Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy, Journal of Applied Physics, vol.106, pp.94509-94510, 2009. ,
Performance predictions for N-P-N AlxGa1-XN/GaN HBTs, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.597-602, 2001. ,
, GaN-Band structure and carrier concentration
Temperature dependence of semiconductor band gaps, Applied Physics Letters, vol.58, issue.25, pp.2924-2926, 1991. ,
Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography, Journal of Applied Physics, vol.107, issue.7, pp.74502-74503, 2010. ,
Laser probes for the thermal and thermomechanical characterisation of microelectronic devices, Microelectronics Journal, vol.32, issue.10, pp.891-898, 2001. ,
URL : https://hal.archives-ouvertes.fr/hal-01550702
Development of a combined interference microscope objective and scanning probe microscope, Review of Scientific Instruments, vol.75, issue.4, pp.1120-1126, 2004. ,
Quantitative Internal Thermal Energy Mapping of Semiconductor Devices Under Short Current Stress Using Backside Laser Interferometry, IEEE Transactions on Electron Devices, vol.49, issue.11, pp.2070-2079, 2002. ,
Transient self-heating effects multifinger AlGaN/GaN HEMTs with metal airbridges, Solid-State Electronics, vol.51, issue.6, pp.969-974, 2007. ,
DOI : 10.1016/j.sse.2007.04.001
URL : https://hal.archives-ouvertes.fr/hal-00283496
Extraction of spatiotemporal distribution of power dissipation in semi-conductor devices using nanosecond interferometric mapping technique, Applied Physics Letters, vol.81, issue.15, pp.2881-2883, 2002. ,
Understanding the Thermoreflectance Coefficient for High Resolution Thermal Imaging of Microelectronic Devices, Electronics Cooling, vol.19, 2013. ,
Thermoreflectance CCD Imaging of Self Heating in Transistors at High Drain Voltage, 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMITHERM), 2012. ,
Thermoreflectance temperature measurements for optically emitting devices, Microelectronics Journal, vol.45, issue.5, pp.515-520, 2014. ,
DOI : 10.1016/j.mejo.2014.02.022
Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions, IEEE Transactions on Electron Devices, vol.62, issue.12, pp.3992-3998, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01348823
Laser beam thermography of circuits in the particular case of passivated semiconductors, Microelectronic Engineering, vol.31, issue.1-4, pp.291-298, 1996. ,
URL : https://hal.archives-ouvertes.fr/hal-01549970
Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films, Review of Scientific Instruments, vol.86, pp.24903-24904, 2015. ,
High Resolution Thermal Characterization of a GaAs MMIC, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015. ,
Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs, IEEE Electron Device Letters, vol.37, issue.9, pp.1197-1200, 2016. ,
Optics, 1987. ,
Precision refractive index measurements of air, N2, O2, Ar and CO2 with a frequency comb, Applied Optics, vol.47, issue.17, pp.3143-3151, 2008. ,
Broadband mid-infrared frequency comb generation in a Si3N4 microresonator, Optics Letters, vol.40, issue.21, pp.4823-4826, 2015. ,
Thermoreflectance temperature measurement with millimeter wave, Review of Scientific Instruments, vol.85, issue.6, pp.64904-64905, 2014. ,
DOI : 10.1063/1.4884639
URL : https://hal.archives-ouvertes.fr/hal-01064000
Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs, Brazilian journal of physics, vol.34, issue.2, pp.517-525, 2004. ,
Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods, Journal of Applied Physics, vol.101, issue.5, pp.54508-54509, 2007. ,
, Education in Microscopy and Digital Imaging
Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates: Implications of the nucleation layer microstructure, IEEE Electron Device Letters, vol.31, issue.12, pp.1395-1397, 2010. ,
Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy, The European Physical Journal Applied Physics, vol.30, issue.2, pp.77-82, 2005. ,
DOI : 10.1051/epjap:2005025
« Développement de Modèles Thermiques Compacts en vue de la modélisation électrothermique des composants de puissance, 2007. ,
REBECA-3D 1-the thermal conductive solver for microelectronics, Microelectronics Journal, vol.29, pp.651-656, 1998. ,
, Thermoréflectivité du silicium oxydé : détermination expérimentale de la sensibilité relative, vol.319, pp.631-638, 1994.
Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry, IEEE Transactions on Electron Devices, vol.64, issue.5, pp.2121-2128, 2017. ,
Use of Multi-notch Filter for Simultaneous Recording of Stokes and Anti-Stokes Raman Signals Close to the Exciting Line, Journal of Raman Spectroscopy, vol.30, pp.745-755, 1999. ,
Handbook of vibrational spectroscopy, 2002. ,
Determining the spectral resolution of a charge-coupled device (CCD) Raman instrument, Applied Spectroscopy, vol.66, issue.9, pp.1034-1043, 2012. ,
Raman Spectroscopy-What is a CCD detector? ,
iVia? ofoal Raaaa iosope ,
Application of the continous extended scanning techniques to the simultaneous detection of Raman scattering and photoluminescence from calcium disilicates using visible and near infrared excitation, Journal of Raman Spectroscopy, vol.26, pp.777-785, 1995. ,
, Spectroscopic Apparatus And Methods, 2010.
, Amélioration des performances du quartz par substitution de germanium au silicium dans le réseau cristallin, 2009.
« La super-résolution », Photoniques-Cahier Technique, vol.62, pp.42-47, 2012. ,
Materials and Interfaces Characterization By Micro-Raman Spectroscopy, Journal de Physique IV, vol.1, issue.C6, pp.6-151, 1991. ,
URL : https://hal.archives-ouvertes.fr/jpa-00250709
The Raman spectrum of diamond, Proceedings of the Indian Academy of Sciences-Section A, vol.40, issue.5, pp.211-216, 1954. ,
, Association pou la Peetio et lEtude de la Cotaiatio, TTaiteeet de lai pou salles propres, p.230, 2002.
, Les technologies de salle propre : principes de conception, de qualification et deeploitatio », SB.COM, 2003.
, Tropicalisation du matériel », Les Techniques de l'Ingénieur, vol.780, pp.1-15, 2001.
,
Raman spectroscopy-FAQ ,
Properties of GaN and related compounds studied by means of Raman scattering, Journal of Physics Condensed Matter, vol.14, issue.38, pp.967-993, 2002. ,
Raman study of Mg, Journal of Applied Physics, vol.94, issue.7, pp.4389-4394, 2003. ,
Raman scattering from LO phonon-plasmon coupled modes in gallium nitride, Journal of Applied Physics, vol.75, issue.2, pp.1098-1101, 1994. ,
Processing and properties of sol gel derived aluminacarbon nano tube composites, Ceramics International, vol.38, issue.5, pp.4065-4074, 2012. ,
XRD and Raman spectroscopic comparative study on phase transformation of gamma-Al2O3 at high temperature, PubMed, vol.26, issue.11, pp.2039-2042, 2006. ,
Raman spectra of synthetic sapphire, Microelectronics Journal, vol.32, issue.12, pp.955-958, 2001. ,
Multivariate reference technique for quantitative analysis of fiber-optic tissue Raman spectroscopy, Analytical Chemistry, vol.85, issue.23, pp.11297-11303, 2013. ,
Rayleigh Scattering and Raman Effect, Theory, Encyclopedia of Spectroscopy and Spectrometry, pp.924-930, 2017. ,
Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique, Chinese Physics B, vol.21, issue.7, pp.77304-77305, 2012. ,
, Réalisation et caractérisation de HEMTs AlGaN/GaN sur silicium pour applications à haute tension, 2014.
Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals, Journal of Applied Physics, vol.117, issue.3, pp.35701-35702, 2015. ,
DOI : 10.1063/1.4905946
Silicon-Thermal properties ,
Silicon Carbide-Thermal properties ,
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution, IEEE Transactions on Device and Materials Reliability, vol.16, issue.4, pp.667-684, 2016. ,
DOI : 10.1109/tdmr.2016.2617458
URL : https://research-information.bristol.ac.uk/files/95632993/2016_Kuball_Pomeroy_Raman_thermography_review_Final_version.pdf
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors, Journal of Applied Physics, vol.114, issue.16, pp.164501-164502, 2013. ,
Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure, Applied Physics A: Materials Science and Processing, vol.80, issue.8, pp.1729-1731, 2005. ,
DOI : 10.1007/s00339-003-2456-2
Probing channel temperature profiles in AlxGa??N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy, Applied Physics Letters, vol.105, issue.7, pp.73504-73505, 2014. ,
Temperature dependence of Raman scattering in hexagonal gallium nitride films, Journal of Applied Physics, vol.87, issue.7, pp.3332-3337, 2000. ,
Comparative analysis of temperature-dependent Raman spectra of GaN and GaN/Mg films, Frontiers of Physics in China, vol.1, issue.1, pp.112-116, 2006. ,
Thermal and piezoelectric stress in operating AlGaN/GaN HFET devices and effect of the Fe doping in the GaN buffer layer, CS MANTECH Conference, 2009. ,
Piezospectroscopic study of the Raman spectrum of cadmium sulfid, Physical Review B, vol.13, issue.12, pp.5518-5529, 1976. ,
Raman Scattering in 6H SiC, Physical Review, vol.170, issue.3, pp.698-704, 1968. ,
Raman investigation of SiC polytypes, Physica Status Solidi (A) Applied Research, vol.162, issue.1, pp.39-64, 1997. ,
Effect of impurities on the Raman scattering of 6H-SiC crystals, Materials Research, vol.15, issue.6, pp.833-836, 2012. ,
Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration, Optics Express, vol.21, issue.22, pp.26475-26482, 2013. ,
Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions, Chinese Physics Letters, vol.32, issue.4, pp.47801-47802, 2015. ,
The temperature dependence of the Raman effect in some wurtzite type crystals, Journal of Raman Spectroscopy, vol.6, issue.3, pp.123-129, 1977. ,
Temperature-depending Raman line-shift of silicon carbide, Journal of Raman Spectroscopy, vol.40, issue.12, pp.1867-1874, 2009. ,
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy, Applied Physics Letters, vol.82, issue.1, pp.124-126, 2003. ,
Channel temperature analysis of GaN HEMTs with nonlinear thermal conductivity, IEEE Transactions on Electron Devices, vol.62, issue.3, pp.840-846, 2015. ,
, Deloppeeet de ioapteuus dhuiditt a ase ddode de iu, 2015.
Impact of microwave annealing on CeO2 thin films sputtered on (111)Si, Materials Research Bulletin, vol.70, pp.712-718, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01646861
Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties, Materials Science in Semiconductor Processing, vol.30, pp.352-360, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01646795
Synthesis and characterization of nanocrystalline and mesostructured CeO2: Influence of the amino acid template, Materials Chemistry and Physics, vol.114, issue.1, pp.462-466, 2009. ,
Raman Spectra of Polycrystalline CeO2 : A Density Functional Theory Study, The Journal of Physical Chemistry C, vol.121, issue.38, pp.20834-20849, 2017. ,
Raman Spectroscopy of Nanocrystalline Ceria and Zirconia Thin Films, Journal of the American Ceramic Society, vol.85, issue.11, pp.2646-2650, 2004. ,
Raman Spectroscopy of nanomaterials: How spectra relate to disorder, particle size and mechanical properties, Progress in Crystal Growth and Characterization of Materials, vol.53, pp.1-56, 2007. ,
URL : https://hal.archives-ouvertes.fr/hal-00120432
Raman study of CeO2. Second-order scattering, lattice dynamics, and particle-size effects, Physical Review B, vol.48, issue.1, pp.178-185, 1993. ,
Nanostructured ceria: a comparative study from Xray diffraction, Raman spectroscopy and BET specific surface measurements, Physica Status Solidi (a), vol.205, issue.7, pp.1534-1539, 2008. ,
, Étude du système CeO2-Bi2O3 pour applications catalytiques et conductimétriques, 2012.
Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors, Applied Physics Letters, vol.69, issue.10, pp.1438-1440, 1996. ,
Effects of RF and DC stress on AlGaN/GaN MODFETs, IEEE Transactions on Device and Materials Reliability, vol.5, issue.3, pp.555-563, 2005. ,
Thermal Conductivity of Silicon and Germanium from 3 K to the Melting Point, Physical Review B, vol.134, issue.4A, pp.1058-1069, 1964. ,
Power electronics on InAlN/(In)GaN: Prospect for a record performance, IEEE Electron Device Letters, vol.22, issue.11, pp.510-512, 2001. ,
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process, International Journal of Microwave and Wireless Technologies, vol.3, issue.3, pp.301-309, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00700906
Anomalous Kink Effect in GaN High Electron Mobility Transistors, IEEE Electron Device Letters, vol.30, issue.2, pp.100-102, 2009. ,
Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs, Applied Physics Letters, vol.110, issue.16, pp.163501-163502, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01646149
Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping, IEEE Electron Device Letters, vol.32, issue.4, pp.482-484, 2011. ,
, Etude de liflueeee de sttess lettiues et diadiatios euttoiues suu des HEMTs de la filière GaN, 2017.
Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage, Applied Physics Letters, vol.96, issue.7, pp.72107-72108, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-01901750
Tunneling current via dislocations in schottky diodes on AlInN/AlN/GaN heterostructures, Semiconductor Science and Technology, vol.24, issue.7, pp.75003-75004, 2009. ,
Analysis of degradation mechanisms in lattice-matched InAlN/GaN highelectron-mobility transistors, Journal of Applied Physics, vol.106, issue.12, pp.124503-124504, 2009. ,
Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors : Implications for hot electron / phonon effects, Applied Physics Letters, vol.101, issue.10, pp.103502-103503, 2012. ,
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors, IEEE Transactions on Electron Devices, vol.58, issue.1, pp.132-140, 2011. ,
Analytical model for power switching GaN-based HEMT design, IEEE Transactions on Electron Devices, vol.58, issue.5, pp.1456-1461, 2011. ,
Resonant X-ray Raman scattering, Physics Reports, vol.312, pp.87-330, 1999. ,
Bulk-sensitive XAS characterization of light elements: From X-ray Raman scattering to X-ray Raman spectroscopy, Distinction : * Nomination aux "7 Best Student Papers, 2017. ,
Measurement of self-heating temperature in AlGaN/GaN HEMTs by using cerium oxide micro-Raman thermometers ,
Boudaat IIfluence of eutto iadiatio o eleeto taps idued NGB stess i AlIN/GaN HEMTss, IEEE Transactions on Nuclear Science, vol.64, issue.8, 2017. ,
, Conférences internationales avec actes revus, pp.22-25
Hpeespettal Theeeoefleetaae Iagig fo AlGaN/GaN Poe HEMTs, Compound Semiconductor IC Symposium (CSICS), Miami, United States. * Nomination: 7 Best Student Papers ,
IIflueeee of euttos iadiatio o Eleeto taps idued ageig test i AlIN/GaN HEMTs, Proc. IEEE 16th European Conference on RADECS ,
Eudeline et B. Boudaat, Deteiatio of AlGaN/GaN poee ttaasisto juutio tepeeatuue fo adaa appliatios, 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), pp.16-19 ,
, IIflueeee du sttess à aaal oueet suu les sigau dleettoluiesseeee is paa des transistors AlInN/GaN », 20èmes Journées Nationales des Microondes