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Comparaison de méthodes de caractérisation thermique de transistors de puissance hyperfréquence de la filière nitrure de gallium

Guillaume Brocero 1
1 Equipe Electronique - Laboratoire GREYC - UMR6072
GREYC - Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen
Abstract : At the moment, AlGaN/GaN HEMTs (High Electron Mobility Transistors) are the most promising for high-power hyperfrequency applications, essentially due to their large carrier density and a high electronic mobility. However, the temperature generating during operational conditions is a crucial parameter to measure, in order to estimate the reliability and durability of components. For these reasons, we compared thermoreflectance and Raman spectroscopy, that are non-destructive and possessing a submicronic spatial resolution. These techniques have already proven their feasibility as thermal characterization methods in both continuous wave and pulsed operational modes. We compare here their adaptability and performance to the conception of a thermal test bench. These methods are known for characterizing specific types of material: metals for thermoreflectance and semiconductors for Raman spectroscopy, leading us to the eventuality to combine them. We compared several results measured by thermoreflectance method with equipment from two different manufacturers that commercialize this technology, so we could highlight some aspects and drawbacks that are note relayed in the literature. With Raman spectroscopy, we identified metrology parameters allowing to realize a thermal measurement setup as reproducible as possible, and we also present an innovative method to probe surface material, especially metals.
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Guillaume Brocero. Comparaison de méthodes de caractérisation thermique de transistors de puissance hyperfréquence de la filière nitrure de gallium. Electronique. Normandie Université, 2018. Français. ⟨NNT : 2018NORMC222⟩. ⟨tel-01970772⟩

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