Spin Physics in Semiconductors, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-00277269
, Semiconductor Quantum Bits, 2016.
Spin relaxation of conduction electrons in noncentrosymmetric semiconductors, Soviet Physics Solid State, vol.13, issue.12, pp.3023-3026, 1972. ,
Wave mechanics applied to semiconductor heterostructures, 1990. ,
Fundamentals of semiconductors : physics and materials properties ,
Simplified lcao method for zincblende, wurtzite, and mixed crystal structures, Physical Review, vol.115, issue.6, p.1493, 1959. ,
Quantum theory of solids, 1987. ,
The valence band structure of the III-V compounds, Journal of Physics and Chemistry of Solids, vol.23, issue.10, pp.1423-1431, 1962. ,
Nitrogen-activated transitions, level repulsion, and band gap reduction in GaAs 1?x N x with x < 0.03. Physical review letters, vol.82, p.3312, 1999. ,
Valence band anticrossing in GaBi x As 1?x, Applied Physics Letters, vol.91, issue.5, p.51909, 2007. ,
Physics of optoelectronic devices, 1995. ,
An improved calculation of the energies of metallic Li and Na, The Journal of Chemical Physics, vol.6, issue.7, pp.367-371, 1938. ,
The modern theory of solids, 1940. ,
Semiconductor and metal nanocrystals : synthesis and electronic and optical properties, 2003. ,
Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductors, Physical Review B, vol.38, issue.3, p.1806, 1988. ,
Uniaxial stress effects in zincblende and Wurtzite GaAs nanowires : an optical spectroscopy study, 2014. ,
Nuclear dynamic polarization by optical electronic saturation and optical pumping in semiconductors, Physical Review Letters, vol.20, issue.10, p.491, 1968. ,
Optical orientation, vol.8, 2012. ,
Band-to-band optical pumping in solids and polarized photoluminescence, Physical Review Letters, vol.23, issue.20, p.1152, 1969. ,
Optical orientation of carriers in interband transitions in semiconductors, JETP Lett, vol.12, pp.1-1, 1970. ,
Effect of optical orientation of electron spins in a GaAs crystal, Pis' ma Zh. Eksp. Teor. Fiz, vol.13, pp.195-197, 1971. ,
, Spintronics : Fundamentals and applications. Reviews of modern physics, vol.76, p.323, 2004.
Optical orientation and femtosecond relaxation of spinpolarized holes in GaAs. Physical review letters, vol.89, p.146601, 2002. ,
Spin orientation of electrons associated with the interband absorption of light in semiconductors, Soviet Journal of Experimental and Theoretical Physics, vol.33, p.1053, 1971. ,
Theory of the effect of spin-orbit coupling on magnetic resonance in some semiconductors, Physical Review, vol.96, issue.2, p.266, 1954. ,
Carrier relaxation and luminescence polarization in quantum wells, Physical Review B, vol.42, issue.11, p.7114, 1990. ,
Exciton spin dynamics in quantum wells, Physical Review B, vol.47, issue.23, p.15776, 1993. ,
Spin relaxation of electrons due to scattering by holes, Zh. Eksp. Teor. Fiz, vol.69, issue.4, p.1382, 1975. ,
Direct observation of the electron spin relaxation induced by nuclei in quantum dots, Physical review letters, vol.94, issue.11, p.116601, 2005. ,
Electron spin relaxation by nuclei in semiconductor quantum dots, Physical review B, vol.65, issue.20, p.205309, 2002. ,
Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions, Physical review B, vol.15, issue.12, p.5780, 1977. ,
Red shift of photoluminescence and absorption in dilute GaAsN alloy layers Japan, J. Appl. Phys, vol.31, p.853, 1992. ,
,
Red shift of photoluminescence and absorption in dilute GaAsN alloy layers, Japanese Journal of Applied Physics, vol.31, issue.7A, p.853, 1992. ,
, journal=Japanese journal of applied physics volume=33 number=8A pages=L1056 year=1994 publisher=IOP Publishing Mozume, T. Gas-source molecular beam epitaxy of GaN x As 1?x using a n radical as the n source
Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition, Journal of crystal growth, vol.195, issue.1, pp.427-437, 1998. ,
Compositon and temperature dependence of the direct band gap of (GaAs 1?x N x (0? x?0.0232) using contactless electroreflectance, Journal of electronic materials, vol.27, issue.5, p.484, 1998. ,
Optical investigation of GaNAs, AIP Conference Proceedings, vol.462, pp.511-516, 1999. ,
Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements, Applied Physics Letters, vol.74, issue.9, pp.1254-1256, 1999. ,
Band parameters for III-V compound semiconductors and their alloys, Journal of applied physics, vol.89, issue.11, pp.5815-5875, 2001. ,
Dilute III-V nitride semiconductors and material systems, Materials Science, p.105, 2008. ,
GaAsSbN : a new low-bandgap material for GaAs substrates, Electronics Letters, vol.35, issue.15, pp.1246-1248, 1999. ,
Omvpe of GaAsSbN for long wavelength emission on GaAs, Journal of crystal growth, vol.261, issue.2, pp.398-403, 2004. ,
Gainnas : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance, Japanese Journal of Applied Physics, vol.35, issue.2S, p.52, 1996. ,
Monolithic vcsel with InGaAsN active region emitting at 1.28 µm and CW output power exceeding 500 µw at room temperature, Electronics Letters, vol.37, issue.2, pp.93-95, 2001. ,
GaNAs resonant-cavity avalanche photodiode operating at 1.064 µm, Applied Physics Letters, vol.77, issue.10, pp.1543-1544, 2000. ,
Recent advances in avalanche photodiodes, IEEE Journal of selected topics in quantum electronics, vol.10, issue.4, pp.777-787, 2004. ,
Tunable superlattice pin photodetectors : characteristics, theory, and application, IEEE journal of quantum electronics, vol.24, issue.5, pp.787-801, 1988. ,
Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy, IEEE Trans. Electron Devices, vol.12, pp.2167-2173, 1993. ,
1-eV solar cells with GaInNAs active layer, Journal of Crystal Growth, vol.195, issue.1, pp.409-415, 1998. ,
Electro-absorption and electrorefraction in inGaAsN quantum well structures, Electronics Letters, vol.38, issue.7, pp.343-344, 2002. ,
Spin-dependent recombination in GaAsN solid solutions, JETP letters, vol.82, issue.7, pp.455-458, 2005. ,
Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor, Nature materials, vol.8, issue.3, pp.198-202, 2009. ,
Optical detection of paramagnetic resonance in an excited state of Cr 3+ in Al 2 O 3, Physical Review Letters, vol.3, issue.12, p.545, 1959. ,
Spin-dependent recombination on silicon surface, Physical Review B, vol.6, issue.2, p.436, 1972. ,
Spin-dependent photoconductivity spectrum of dislocated silicon. physica status solidi (a), vol.37, pp.57-59, 1976. ,
, Semiconductor Quantum Bits, 2016.
Giant spin relaxation anisotropy in zinc-blende heterostructures, Physical Review B, vol.60, issue.23, p.15582, 1999. ,
Symmetry and spin dephasing in (110)-grown quantum wells, Physical review letters, vol.100, issue.17, p.176806, 2008. ,
Electrical control of the electron spin dynamics in [111]-oriented GaAs/AlGaAs quantum wells, 2013. ,
Atomic physics, vol.12, 1997. ,
Fundamentals of semiconductors : physics and materials properties, 2010. ,
Spin-orbit coupling effects in two-dimensional electron and hole systems, Springer Tracts in Modern Physics, vol.191, pp.153-156, 2003. ,
Spin Physics in Semiconductors, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-00277269
Spin relaxation of conduction electrons in noncentrosymmetric semiconductors, Soviet Physics Solid State, vol.13, issue.12, pp.3023-3026, 1972. ,
Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells, Applied physics letters, vol.73, issue.15, pp.2140-2142, 1998. ,
Spin relaxation in GaAs/Al x Ga 1?x As quantum wells, Physical Review B, vol.62, issue.19, p.13034, 2000. ,
Low-temperature spin relaxation in n-type GaAs, Physical Review B, vol.66, issue.24, p.245204, 2002. ,
Spin dynamics in semiconductors, Semiconductor Spintronics and Quantum Computation, pp.107-145, 2002. ,
High temperature gate control of quantum well spin memory, Physical review letters, vol.91, issue.24, p.246601, 2003. ,
Spin-orbit coupling effects in zinc blende structures, Physical Review, vol.100, issue.2, p.580, 1955. ,
Optical orientation, vol.8, 2012. ,
Suppression of the d'yakonov-perel'spinrelaxation mechanism for all spin components in [111] zincblende quantum wells, Physical Review B, vol.71, issue.4, p.45313, 2005. ,
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers, Journal of physics C : Solid state physics, vol.17, issue.33, p.6039, 1984. ,
Spin splitting in the spectrum of two-dimensional electrons due to the surface potential, JETP Lett, vol.30, issue.9, pp.541-544, 1979. ,
A well-rounded life for an electron spin, Physics, vol.4, p.73, 2011. ,
Direct mapping of the formation of a persistent spin helix, Nature Physics, vol.8, issue.10, pp.757-762, 2012. ,
Spin-orbit fields in asymmetric (001)-oriented GaAs/Al x Ga 1?x As quantum wells, Physical Review B, vol.83, issue.4, p.41301, 2011. ,
Tuning of structure inversion asymmetry by the ?-doping position in (001)-grown GaAs quantum wells, Applied Physics Letters, vol.94, issue.24, p.242109, 2009. ,
Interplay of rashba/dresselhaus spin splittings probed by photogalvanic spectroscopy-a review. physica status solidi (b), pp.1801-1823, 2014. ,
Spin relaxation anisotropy in two-dimensional semiconductor systems, Journal of physics : condensed matter, vol.14, issue.12, p.271, 2002. ,
Weak antilocalization and spin precession in quantum wells, Physical Review B, vol.53, issue.7, p.3912, 1996. ,
Spin relaxation of two-dimensional electrons in noncentrosymmetric semiconductors, Sov. Phys. Semicond, vol.20, issue.1, pp.110-112, 1986. ,
,
, Ga 1?x As quantum wells from hanle-effect measurements : Relative strengths of rashba and dresselhaus spin-orbit coupling, Physical Review B, vol.74, issue.3, p.33305, 2006.
Emergence of the persistent spin helix in semiconductor quantum wells, Nature, vol.458, issue.7238, pp.610-613, 2009. ,
Detection of large magnetoanisotropy of electron spin dephasing in a high-mobility twodimensional electron system in a [001] GaAs/Al x Ga 1?x As quantum well, Physical Review B, vol.76, issue.7, p.73309, 2007. ,
Spin relaxation in GaAs (110) quantum wells, Physical Review Letters, vol.83, issue.20, p.4196, 1999. ,
Anomalous spin dephasing in (110) GaAs quantum wells : Anisotropy and intersubband effects, Physical review letters, vol.93, issue.14, p.147405, 2004. ,
Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells, Applied Physics Letters, vol.97, issue.20, p.202102, 2010. ,
Full electrical control of the electron spin relaxation in GaAs quantum wells, Physical review letters, vol.107, issue.13, p.136604, 2011. ,
Electrical suppression of spin relaxation in GaAs (111) B quantum wells, Physical review letters, vol.109, issue.26, p.266602, 2012. ,
Electrically tunable electron spin lifetimes in GaAs (111) B quantum wells, Journal of Applied Physics, vol.112, issue.8, p.83913, 2012. ,
Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells, Applied Physics Letters, vol.102, issue.24, p.242408, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-02050686
Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells, Applied Physics Letters, vol.101, issue.3, p.32104, 2012. ,
Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells, New Journal of Physics, vol.15, issue.9, p.95016, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-02050330
Piezoelectricity : an introduction to the theory and applications of electromechanical phenomena in crystals, 1946. ,
Effects of asymmetry on electron spin dynamics in gallium arsenide quantum wells, 2009. ,
Physical properties of crystals, 1957. ,
Conception et élaboration comparée de structures III-V (111) piézoélectriques épitaxiées par jets moléculaires, sur substrats nominaux et vicinaux, en vue de leur application pour l'optoélectronique, vol.3, 1998. ,
Strained superlattices and heterostructures : Elastic considerations, Journal of applied physics, vol.68, issue.9, pp.4561-4568, 1990. ,
Piezoelectric effects in strained-layer superlattices, Journal of applied physics, vol.63, issue.8, pp.2717-2719, 1988. ,
Electronic structure of [001]-and [111]-growth-axis semiconductor superlattices, Physical Review B, vol.35, issue.3, p.1242, 1987. ,
Magnitude of the piezoelectric field in (111)B In y Ga 1?y As strained-layer quantum wells, Journal of applied physics, vol.74, issue.7, pp.4681-4684, 1993. ,
,
, InGaAs/GaAs multiple quantum well pin structures by photoreflectance. Microelectronic engineering, vol.43, pp.171-177, 1998.
Piezoelectric field determination in strained InGaAs quantum wells grown on [111] B GaAs substrates by differential photocurrent, Microelectronics journal, vol.30, issue.4-5, pp.439-444, 1999. ,
Piezoelectric-induced quantumconfined stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates, Applied Physics Letters, vol.77, issue.13, pp.1982-1984, 2000. ,
Direct measurement of piezoelectric field ,
, InGaAs/GaAs heterostructure by franz-keldysh oscillations, Applied physics letters, vol.60, issue.19, pp.2400-2402, 1992.
Spin-orbit coupling effects in two-dimensional electron and hole systems, Springer Tracts in Modern Physics, vol.191, pp.153-156, 2006. ,
Atomistic spin-orbit coupling and k · p parameters in III-V semiconductors, Physical Review B, vol.72, issue.19, p.193201, 2005. ,
Strain-generated internal fields in pseudomorphic InGaAs/GaAs quantum well structures on {11l} GaAs substrates, Japanese journal of applied physics, vol.33, issue.1S, p.702, 1994. ,
Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates, Journal of Applied Physics, vol.90, issue.2, pp.915-917, 2001. ,
Pyroelectric effect in semiconductor heterostructures, Superlattices and microstructures, vol.14, issue.2-3, pp.149-152, 1993. ,
Indium segregation effects in (111)B-grown InGaAs/GaAs piezoelectric quantum wells, Physical Review B, vol.59, issue.8, p.5308, 1999. ,
Indium segregation in (111)B GaAs-In x Ga 1?x As quantum wells determined by transmission electron microscopy, Journal of Physics D : Applied Physics, vol.34, issue.13, p.1943, 2001. ,
Composition and strain dependence of the piezoelectric coefficients in In x Ga 1?x As alloys, Physical Review B, vol.74, issue.24, p.245332, 2006. ,
Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates, Microelectronics journal, vol.30, issue.4, pp.367-371, 1999. ,
,
Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown InGaAs/GaAs multiple quantum wells, Physical Review B, vol.48, issue.11, p.8491, 1993. ,
Dependence on the in concentration of the piezoelectric field in (111)B InGaAs/GaAs strained heterostructures, Applied physics letters, vol.65, issue.16, pp.2042-2044, 1994. ,
Theory of semiconductor superlattice electronic structure, Reviews of Modern Physics, vol.62, issue.1, p.173, 1990. ,
Ultrafast in-well screening of the piezoelectric field in (111) quantum wells, Physical Review B, vol.53, issue.24, p.16172, 1996. ,
, Screening effects in, issue.111
, AlGaAs-InGaAs single quantum well heterostructures, vol.60, pp.2637-2639, 1992.
Hole spin relaxation in n-modulation doped quantum wells, Solid state communications, vol.93, issue.1, pp.57-60, 1995. ,
Optical orientation and femtosecond relaxation of spinpolarized holes in GaAs. Physical review letters, vol.89, p.146601, 2002. ,
Spin-relaxation suppression by compensation of bulk and structural inversion asymmetries in [111]-oriented quantum wells, Journal of applied physics, vol.97, issue.5, p.53707, 2005. ,
Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields, Journal of Applied Physics, vol.89, issue.12, pp.7875-7878, 2001. ,
Determination of the sign of the conductionelectron g factor in semiconductor quantum wells by means of the hanle effect and spin-quantum-beat techniques, Physics of the Solid State, vol.39, issue.4, pp.681-685, 1997. ,
,
90 4.1.2 Croissance des semiconducteurs III-V-Bi : un historique, p.91 ,
, 92 4.1.4 Applications potentielles des matériaux III, p.94
,
,
,
GaBiAs : A material for optoelectronic terahertz devices, Applied physics letters, vol.88, issue.20, p.201112, 2006. ,
Photovoltaic characterisation of ,
, GaAsBi/GaAs multiple quantum well devices, Solar Energy Materials and Solar Cells, vol.172, pp.238-243, 2017.
Unfolding the band structure of GaAsBi, Journal of Physics : Condensed Matter, vol.29, issue.7, p.75001, 2016. ,
Surfactant enhanced growth of GaNAs and InGaNAs using bismuth, Journal of crystal growth, vol.251, issue.1, pp.449-454, 2003. ,
Surfactant enhanced growth of GaNAs and InGaNAs using a Bi flux, Molecular Beam Epitaxy, 2002 International Conference on, pp.275-276, 2002. ,
Bismuth surfactant growth of the dilute nitride GaN x As 1?x, Journal of crystal growth, vol.279, issue.3, pp.316-320, 2005. ,
, Propriétés des alliages InSb 1?x Bi x. mesures électriques. physica status solidi (b), vol.34, pp.329-340, 1969.
Growth of insb1-xbix single crystals by czochralski method, Journal of Crystal Growth, vol.12, issue.2, pp.169-172, 1972. ,
Indium antimonidebismuth compositions grown by molecular beam epitaxy, Journal of Applied Physics, vol.53, issue.7, pp.4932-4937, 1982. ,
InSb 1?x Bi x films grown by molecular beam epitaxy, Japanese Journal of Applied Physics, vol.20, issue.4, p.303, 1981. ,
Organometallic vapor phase epitaxial growth and characterization of inasbi and inassbbi, Applied Physics Letters, vol.55, issue.23, pp.2420-2422, 1989. ,
Metalorganic chemical vapor deposition and characterization of the In-As-Sb-Bi material system for infrared detection, Applied physics letters, vol.53, issue.2, pp.142-144, 1988. ,
InAsSbBi alloys grown by organometallic vapor-phase epitaxy, Journal of applied physics, vol.75, issue.6, pp.2857-2863, 1994. ,
Characterization of secondary phases formed during movpe growth of insbbi mixed crystals, Journal of crystal growth, vol.213, issue.1-2, pp.51-56, 2000. ,
New semiconductor alloy GaAs 1?x Bi x grown by metal organic vapor phase epitaxy, Japanese journal of applied physics, vol.37, issue.11A, p.1283, 1998. ,
Overcoming limitations in semiconductor alloy design, Superlattices and microstructures, vol.29, issue.6, pp.395-404, 2001. ,
Molecular beam epitaxy growth of GaAs 1?x Bi x, Applied physics letters, vol.82, issue.14, pp.2245-2247, 2003. ,
Metastable GaAsBi alloy grown by molecular beam epitaxy, Japanese journal of applied physics, vol.42, issue.10B, p.1235, 2003. ,
Growth of high Bi concentration GaAs 1?x Bi x x by molecular beam epitaxy, Applied Physics Letters, vol.101, issue.8, p.82112, 2012. ,
Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy, Infrared physics & technology, vol.55, issue.1, pp.156-160, 2012. ,
Growth and properties of GaSbBi alloys, Applied Physics Letters, vol.103, issue.14, p.142106, 2013. ,
High bi content GaSbBi alloys, Journal of Applied Physics, vol.116, issue.4, p.43511, 2014. ,
Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys, Journal of Crystal Growth, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01755264
Derivation of 12-and 14-band k·p hamiltonians for dilute bismide and bismide-nitride semiconductors, Semiconductor Science and Technology, vol.28, issue.12, p.125025, 2013. ,
Valence band anticrossing in GaBi x As 1?x, Applied Physics Letters, vol.91, issue.5, p.51909, 2007. ,
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs, Physical Review B, vol.84, issue.24, p.245202, 2011. ,
Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs, Physical Review B, vol.65, issue.11, p.115203, 2002. ,
Composition dependence of photoluminescence of GaAs 1?x Bi x alloys, Applied physics letters, vol.95, issue.4, p.41903, 2009. ,
Growth and properties of the dilute bismide semiconductor GaAs 1?x Bi x a complementary alloy to the dilute nitrides, International Journal of Nanotechnology, vol.5, issue.9, pp.963-983, 2008. ,
Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy, Japanese journal of applied physics, vol.45, issue.1R, p.67, 2006. ,
Band parameters for III-V compound semiconductors and their alloys, Journal of applied physics, vol.89, issue.11, pp.5815-5875, 2001. ,
Band anticrossing in III-N-V alloys, Physica Status Solidi B Basic Research, vol.223, issue.1, pp.75-85, 2001. ,
The potential role of bismide alloys in future photonic devices, Transparent Optical Networks (ICTON), 2011 13th International Conference on, pp.1-4, 2011. ,
Optoelectronic devices and materials, Springer Handbook of Electronic and Photonic Materials, pp.1-1, 2017. ,
Molecular beam epitaxy of GaAsBi and related quaternary alloys, Molecular Beam Epitaxy, pp.159-170, 2013. ,
Temperature-insensitive band-gap III-V semiconductors, Springer Handbook of Electronic and Photonic Materials, pp.1-1 ,
, , 2017.
Optical fiber communications, 2003. ,
High temperature characteristics of InGaAsp/inp laser structures, Applied physics letters, vol.62, issue.19, pp.2402-2404, 1993. ,
Dependence of threshold current on qw position and on pressure in 1.5 µm InGaAs (p) lasers. physica status solidi (b), vol.211, pp.525-531, 1999. ,
Bismide-nitride alloys : promising for efficient light emitting devices in the near-and mid-infrared, Journal of applied physics, vol.113, issue.4, p.43110, 2013. ,
Band engineering in dilute nitride and bismide semiconductor lasers, Semiconductor Science and Technology, vol.27, issue.9, p.94011, 2012. ,
InGaAsBi alloys on inp for efficient near-and midinfrared light emitting devices, Journal of Applied Physics, vol.114, issue.21, p.213103, 2013. ,
The electronic band structure of GaAsBi/GaAs layers : Influence of strain and band anti-crossing, Journal of Applied Physics, vol.111, issue.11, p.113108, 2012. ,
Theory of the electronic structure of dilute bismide alloys : Tight-binding and k · p models, Bismuth-Containing Compounds, pp.55-88, 2013. ,
Recombination mechanisms and band alignment of GaAs 1?x Bi x /GaAs light emitting diodes, Applied Physics Letters, vol.100, issue.5, p.115, 2012. ,
GaAs 1?x Bi x light emitting diodes, Journal of Crystal Growth, vol.311, issue.7, pp.1872-1875, 2009. ,
Low temperature dependence of oscillation wavelength in GaAs 1?x Bi x laser by photo-pumping, Applied physics express, vol.3, issue.6, p.62201, 2010. ,
Electrical injection Ga (AsBi)/(AlGa) as single quantum well laser, Applied Physics Letters, vol.102, issue.24, p.242115, 2013. ,
Demonstration of InAsBi photoresponse beyond 3.5 µm, Applied Physics Letters, vol.104, issue.17, p.171109, 2014. ,
Giant spin-orbit bowing in GaAs 1?x Bi x, Physical review letters, vol.97, issue.6, p.67205, 2006. ,
Electron hall mobility in GaAsBi, journal of applied physics, vol.106, issue.4, p.43705, 2009. ,
Temperature dependence of hole mobility in GaAs 1?x Bi x alloys, journal of applied physics, vol.108, issue.8, p.83708, 2010. ,
Effect of bi alloying on the hole transport in the dilute bismide alloy GaAs 1?x Bi x, Physical Review B, vol.83, issue.7, p.75307, 2011. ,
Effects of Bi incorporation on the electronic properties of GaAs : Carrier masses, hole mobility, and bi-induced acceptor states, physica status solidi (b), vol.250, issue.4, pp.779-786, 2013. ,
Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell. Semiconductor Science and Technology, vol.30, p.94010, 2015. ,
Gaasbi photoconductive terahertz detector sensitivity at long excitation wavelengths, Applied Physics Express, vol.5, issue.2, p.22601, 2012. ,
Thz generation mechanisms in the semiconductor alloy, gaas1-x bi x, Journal of Applied Physics, vol.118, issue.16, p.165702, 2015. ,
Enhanced terahertz bandwidth and power from gaasbi-based sources, Advanced Optical Materials, vol.1, issue.10, pp.714-719, 2013. ,
Electron mobility in dilute gaas bismide and nitride alloys measured by time-resolved terahertz spectroscopy, Applied physics letters, vol.89, issue.12, p.122103, 2006. ,
Anisotropic electron g factor as a probe of the electronic structure of GaAs 1?x Bi x /GaAs epilayers, Physical Review B, vol.90, issue.19, p.195301, 2014. ,
Electron spin relaxation in GaAs 1?x Bi x : Effects of spin-orbit tuning by bi incorporation, Journal of Applied Physics, vol.112, issue.6, p.63701, 2012. ,
Enhancement of rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth, Applied Physics Letters, vol.107, issue.14, p.142401, 2015. ,
Electron spin dynamics and g-factor in GaAsBi, Applied Physics Letters, vol.102, issue.25, p.252107, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-02050545
Effect of molecular beam epitaxy growth conditions on the bi content of GaAs 1?x Bi x, Applied Physics Letters, vol.92, issue.19, p.192110, 2008. ,
Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy : effect of thermal annealing, Nanoscale research letters, vol.9, issue.1, p.123, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01723509
Low-temperature photoluminescence study of exciton recombination in bulk gaasbi, Nanoscale research letters, vol.9, issue.1, p.19, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01943032
Photoluminescence investigation of high quality GaAs 1?x bi x on GaAs, Applied Physics Letters, vol.98, issue.12, p.122107, 2011. ,
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells, Journal of Applied Physics, vol.114, issue.16, p.164306, 2013. ,
,
Localization effects and band gap of GaAsBi alloys. physica status solidi (b), pp.1276-1281, 2014. ,
Effects of rapid thermal annealing on GaAs 1?x Bi x alloys, Applied Physics Letters, vol.101, issue.1, p.12106, 2012. ,
Variation of lattice constant and cluster formation in GaAsBi, Journal of Applied Physics, vol.114, issue.24, p.243504, 2013. ,
Growth of GaAs 1?x xBi x /GaAs multi-quantum wells by molecular beam epitaxy, physica status solidi (c), vol.5, issue.9, pp.2719-2721, 2008. ,
Structural investigation of GaAs 1?x Bi x /GaAs multiquantum wells, Applied Physics Letters, vol.93, issue.13, p.131915, 2008. ,
, Thermal annealing effect on the properties of GaBiAs. physica status solidi (c), vol.9, pp.1614-1616, 2012.
Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence, Semiconductor Science and Technology, vol.28, issue.2, p.22001, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-02050522
,
, GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy, Journal, p.118
, Vacuum Science & Technology B, Nanotechnology and Microelectronics : Materials, Processing, Measurement, and Phenomena, vol.32, issue.2, pp.2-119, 2014.
Effect of thermal annealing on structural and optical properties of the GaAs 0.963 Bi 0.037 alloy. Semiconductor Science and Technology, vol.23, p.125034, 2008. ,
Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy, Semiconductor Science and Technology, vol.25, issue.6, p.65009, 2010. ,
, Clustering effects in GaAsBi. Applied Physics Letters, vol.96, issue.13, p.131115, 2010.
Band gap of GaAs 1?x Bi x , 0< x< 3.6%. Applied physics letters, vol.82, pp.3874-3876, 2003. ,
Characteristics of semiconductor alloy GaAs 1?x Bi x, Japanese Journal of Applied Physics, vol.41, issue.5R, p.2801, 2002. ,
Temperature dependence of GaAs 1?x Bi x band gap studied by photoreflectance spectroscopy, Japanese journal of applied physics, vol.42, issue.2R, p.371, 2003. ,
S-shaped behaviour of the temperaturedependent energy band gap in dilute nitrides, Physica E : Low-dimensional Systems and Nanostructures, vol.17, pp.242-244, 2003. ,
, Luminescence dynamics in GaAsBi). Applied Physics Letters, vol.98, issue.16, p.161104, 2011.
Carrier relaxation dynamics in a GaAsBi single quantum well under high-intensity excitation conditions, physica status solidi (c), vol.10, issue.9, pp.1234-1237, 2013. ,
Optical orientation, vol.8, p.119, 2012. ,
Erratum : Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin bloch equation approach, phys. rev. b, vol.79, p.125206, 2009. ,
, Physical Review B, vol.83, issue.23, p.239906, 2011.
Electron-spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin bloch equation approach, Physical Review B, vol.79, issue.12, p.125206, 2009. ,
Spin relaxation of conduction electrons in noncentrosymmetric semiconductors, Soviet Physics Solid State, vol.13, issue.12, pp.3023-3026, 1972. ,
Spin relaxation of two-dimensional electrons in noncentrosymmetric semiconductors, Sov. Phys. Semicond, vol.20, issue.1, pp.110-112, 1986. ,
Identification of an isolated arsenic antisite defect in GaAsBi, Applied Physics Letters, vol.104, issue.5, p.52110, 2014. ,
, chambre de l'échantillon est sous vide afin d'être isolée thermiquement de la température de la pièce. L'accès optique à l'échantillon est possible par les fenêtres du cryostat
,
Ultrafast spectroscopy of semiconductors and semiconductor nanostructures, vol.115, 2013. ,
Spectroscopic and laser characteristics of ti : Al 2 o 3, JOSA B, vol.3, issue.1, pp.125-133, 1986. ,
Electronnuclear spin dynamics of Ga 2+ paramagnetic centers probed by spin-dependent recombination : A master equation approach, Physical Review B, vol.95, issue.19, p.195204, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-02056476
The dynamical theory of nuclear induction, Physical Review, vol.89, issue.4, p.728, 1953. ,
Nuclear spin relaxation in liquids : theory, experiments, and applications, 2006. ,
The theory of relaxation processes, Advances in Magnetic and Optical Resonance, vol.1, pp.1-32, 1965. ,
Zero-field nuclear quadrupole spin-lattice relaxation in the rotating frame, Physical Review, vol.142, issue.1, p.179, 1966. ,
Optical orientation and spin-dependent recombination in GaAsN alloys under continuous-wave pumping, Journal of Physics : Condensed Matter, vol.22, issue.46, p.465804 ,
Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells, Applied Physics Letters, vol.108, p.82103, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01943076
Electron-nuclear spin dynamics of Ga 2+ paramagnetic centers probed by spin-dependent recombination : A master equation approach, Phys. Rev. B, vol.95, p.195204, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-02056476
Spinfiltering effect in GaAsN : electron-nuclear spin dynamics of Ga 3+ centers, Journal of Materials Science : Materials in Electronics, vol.29, pp.15307-15314, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02057281
Electronnuclear spin dynamics of Ga centers in GaAsN dilute nitride semiconductors probed by pump-probe spectroscopy, The European Physical Journal Plus, vol.133, p.122, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02057639
Electron-nuclear coherent spin oscillations probed by spin-dependent recombination, Physical Review B, vol.97, p.155201, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02056663
,
,
Bismuth Content Dependence of the Electron Spin Relaxation Time in GaAsBi Epilayers and Quantum Well Structures, Semiconductor Science and Technology, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-01944345
Spin Properties of dilute bismide, Conférences internationales : The 18 th European Molecular Beam Epitaxy workshop, 2015. ,
, th International Workshop on Bismuth-Containing Semiconductors : Growth, Properties and Devices, 2015.
,
Experimental and Theoretical Determination of Electron g-Factor in GaAsBi Alloys, 2015. ,
, th International Workshop on Bismuth-Containing Semiconductors : Growth, Properties and Devices, 2016.
Spin Dependent Recombination in GaAsBi Quantum Well, 2016. International Conference on Molecular Beam Epitaxy ( MBE ), 2016. ,
On the structural and optical properties of GaAsBi quantum wells and thin layers grown on GaAs by molecular beam epitaxy, 2016. ,
, IEEE Nanotechnology Materials and Devices Conference (NMDC), Octobre, 2016.
,
,
,
, Alexandre Arnoult
,
,
Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-02052796
, IEEE Nanotechnology Materials and Devices Conference (NMDC), Octobre, 2016.
,
,
,
,
Carrier dynamics in GaAsBi quantum wells, 2016. ,
, Physics and Simulation of Optoelectronic Devices XXV, 2017.
,
Electron spin dynamics in GaAsBi quantum wells, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01947450
, Ultrafast Phenomena and Nanophotonics XXI, 2017.
,
Electron-nuclear coherent spin oscillations probed by the spin dependent recombination in band-to-band photoluminescence, 2017. A Workshop on The Physics of Optoelectronic Materials and Devices, 2017. ,
Electron spin dynamics in dilute bismides, 2017. ,
, APS March Meeting, 2017.
,
,
Probing the coherent oscillations of the electron-nuclear spin system of Ga paramagnetic centers in GaAsN by band-to-band photoluminescence, 2017. ,
, th International Workshop on Bismuth-Containing Semiconductors, 2017.
ElectronNuclear coherent spin oscillations probed by spin dependent recombination in band to-band photoluminescence, International conference "On New Trends in Quantum and Mesoscopic Physics, p.11, 2017. ,
, th International Workshop on Bismuth-Containing Semiconductors, 2018.
Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-01944345
, Contrôle du temps de relaxation de spin de l'électron dans les puits quantiques piézo-électriques In x Ga 1?x As/GaAs, p.141, 2016.
, Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, 2017.
Temps de relaxation de spin des électrons dans les puits quantiques GaAsBi, 2017. ,
, Journées Nationales du Photovoltaïque (JNPV), 2017.
, eV à base de nitrure dilué accordés en maille sur GaAs : GaInAsN, GaAsSbN et GaInAsN(Bi), 2017.