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Alliages à base de GaAs pour applications optoélectroniques et spintroniques

Abstract : This thesis is devoted to the study of the electron spin properties for optoelectronic and spintronic applications of different GaAs-based semiconductor systems: GaAsN, GaAsBi, and InGaAs.The investigation of the spin properties of dilute nitride GaAsN-based semiconductors is centered on the properties of the hyperfine interaction between the electron and the nuclei at the paramagnetic centers naturally present in these compounds. The study is carried out, in the temporal domain, by a photoluminescence-based pump-probe technique and taking advantage of the spin-dependent relaxation mechanism via deep paramagnetic centers in GaAsN bulk. We demonstrate a novel detection scheme of the coherent electron-nuclear spin oscillations related to the hyperfine interaction and revealed by the band-to-band photoluminescence in zero external magnetic field and without the need of electron spin resonance techniques. GaAsBi semiconductors provide new opportunities for many optoelectronic applications thanks to possibility of greatly modulate the band gap and the spin-orbit interaction with the bismuth concentration. Using time-resolved photoluminescence spectroscopy experiment, we have characterized the optical and spin properties of bulk and quantum well GaAsBi structures elaborated by molecular beam epitaxy in a wide range of Bi-content. The experimental results revealed, on the one hand, the localization effect of exciton at low temperature and, on the other hand, the marked decrease of electron spin relaxation time when bismuth content increases. These results are consistent with Dyakonov-Perel spin relaxation mechanism whose efficiency is enhanced by the strong spin-orbit coupling interaction in GaAsBi alloy. The third study is focused on the demonstration of the control of the electron spin relaxation time in the III-V semiconductors by taking advantage of the symmetry properties allied to the piezoelectric effects in InGaAs (111)B heterostructures, without the need of any external electric field. We show that, in this system, the particular direction (111) associated with parameters related to InGaAs quantum wells such as indium concentration and quantum well width allows the control of spin electron relaxation time via piezoelectric field induced by the strain amplitude in the well. These observations demonstrate the possibility of monitoring electron spin relaxation process using intrinsic quantum confined structures, making them ideal candidates for use in quantum information storage and processing devices.
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Submitted on : Tuesday, December 18, 2018 - 4:42:06 PM
Last modification on : Tuesday, March 3, 2020 - 11:40:04 AM
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  • HAL Id : tel-01959392, version 1


Sawsen Azaizia. Alliages à base de GaAs pour applications optoélectroniques et spintroniques. Electromagnétisme. INSA de Toulouse, 2018. Français. ⟨NNT : 2018ISAT0018⟩. ⟨tel-01959392⟩



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