. .. Bibliography, Single Event Effect testing of NAND Flash memory

. .. Heavy-ions, Flash test results based on heavy-ion testing

. , Flash test results based on proton test results

. .. Bibliography,

C. Study, The MTCube Science Mission, Chapter

. , orbit Single Error Rate (SER) methodology

.. .. Weibull,

. , Single Error Rate (SER) estimation

. , 155 6.3.2 Other approximations used for the SER estimation

. , 3.4 Pessimistic case soft error rate analysis, orbit average rate calculation for the MTCube Science Experiment

.. .. Res-experiment, 161 6.4.2 Estimation of the average generated data

. .. Conclusion,

. .. Bibliography,

. .. Conclusion,

. .. List-of-publications,

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S. Perez, C. Deneau, N. , J. Roche, M. Bernard et al., Developpement de méthodologies de tests en radiation des nanosatellites, Concepts for Modularity and Standardization of Electronic Boards on Small Satellites, pp.585-589, 1995.

G. M. Swift, S. M. Guertin-;-a, ;. Tipton, and . Weulersse, Développement et validation d'outils Monte-Carlo pour la prédiction des basculements logiques induits par les radiations dans les memories SRAM très largement submicroniques, IEEE Transactions on Nuclear Science, vol.47, issue.6, pp.1708-1712, 1991.

M. P. Baze, ;. Berger, G. Ryckewaert, R. Harboe-sørensen, and L. Adams, The heavyion irradiation facility at cyclone-a dedicated SEE beam line, Single Event Effects in Digital and Linear ICs, pp.78-83, 1996.

D. Cardoza, Investigating Pulsed X-ray Induced SEE in Analog Microelectronic Devices, IEEE Transactions on Nuclear Science, vol.62, issue.6, pp.2458-2467, 2015.

D. Boscher, ;. Ferrari, ;. Brugger, ;. Dilillo, P. Girard et al., Efficient March Test Procedure for Dynamic Read Destructive Fault Detection in SRAM Memories, 12th European Conference on Radiation and Its Effects on Components and Systems, vol.21, pp.186-190, 1996.

D. F. Heidel, Influence of proton elastic scattering on soft error generation of SRAMs, Marinescu, 1982] M. Marinescu,-Simple and Efficient Algorithms for Functional RAM Testing, vol.56, pp.91-96, 1982.

. A. Official-omere-website-;-j and . Pellish, Radiation Tolerance of Devices and Circuits in a 3D Technology Based on the Vertical Integration of Two 130-nm CMOS Layers, Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on, vol.57, pp.2046-2054, 1997.

E. M. Murray-;-d, J. I. Sawyer, . ;. Vette, M. R. Schwank, J. A. Shaneyfelt et al., Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections, Low-Energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells, vol.54, pp.486-490, 1976.

M. Benedetto, Radiation Evaluation of Ferroelectric Random Access Memory Embedded in 180nm CMOS Technology, Data Retention Fault in SRAM Memories: Analysis and Detection Procedures, vol.38, pp.1-2, 1952.

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R. Katz, Ionizing radiation-induced asymmetries of the retention characteristics of ferroelectric thin films, The effects of architecture and process on the hardness of programmable technologies, vol.46, pp.1575-1584, 1982.

S. David and . Soonckindt, Evaluation of recent technologies of non-volatile RAM, RADECS, pp.1-8, 2007.
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;. M. Bryan and . O'bryan, Ionizing Radiation Effect on Ferroelectric Nonvolatile Memories and Its Dependence on the Irradiation Temperature, Single Event Effect Evaluation of FeRAM Memories for Space Applications,? presented at the Non-volatile Memory Technology Symposium, vol.4, pp.1-5, 1990.

M. Bagatin, S. Gerardin, G. Cellere, A. Paccagnella, A. Visconti et al., Increase in the heavy-ion upset cross section of floating gate cells previously exposed to TID, Microelectronics Reliability, vol.55, pp.547-555, 2008.

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;. G. Lora, A. Cellere, A. Paccagnella, M. Visconti, R. Bonanomi et al., Jacob Stéphanie, « Intégration, caractérisation et modélisation des mémoires non volatiles à nano-cristaux de silicium », Thesis manuscript, Effect of different total ionizing dose source on charge loss from programmed floating gate cells, vol.52, pp.68-71, 1992.

P. Calvel, C. Barillot, P. Lamothe, R. Ecoffet, S. Duzellier et al., Test procedures for the measurement of single-event effects in semiconductor devices from heavy-ion irradiation, IEEE Transactions on Nuclear Science, vol.43, pp.23-32, 1994.

E. Petersen-;-petersen, E. L. Pickel, J. T. Blandford-;-w, J. P. Stapor, J. B. Meyers et al., Développement et validation d'outils monte-carlo pour la prédiction des basculements logiques induits pou les radiations dans les mémoires SRAM très largement submicroniques, Methodologies for the Statistical Analysis of Memory Response to Radiation, vol.43, pp.1966-1973, 1980.

?. V. Gupta, A. Bosser, G. Tsiligiannis, A. Zadeh, A. Javanainen et al., Heavy-ion Radiation Impact on a 4Mb FRAM under Different Test Modes and Conditions, IEEE Transactions on Nuclear Science, vol.63, 2016.
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?. L. Dilillo, G. Tsiligiannis, V. Gupta, A. Bosser, F. Saigné et al., Soft Errors in COTS SRAM Memories, In press in Journal of Semiconductor Science and Technology, 2016.

?. A. Bosser, V. Gupta, G. Tsiligiannis, A. Javanainen, H. Kettunen et al., Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs, IEEE Transactions on Nuclear Science, vol.62, issue.6, pp.2620-2626, 2015.
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?. V. Gupta, A. Bosser, G. Tsiligiannis, A. Mohammadzadeh, A. Javanainen et al., SEE on Different Layers of Stacked-SRAMs, vol.62, pp.2673-2678, 2015.
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?. G. Tsiligiannis, L. Dilillo, V. Gupta, A. Bosio, P. Girard et al., Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric RandomAccess Memory, IEEE Transactions on Nuclear Science, issue.6, p.61, 2014.

?. V. Gupta, A. Bosser, G. Tsiligiannis, A. Mohammadzadeh, A. Javanainen et al., Impact of Stacked-Layer Structure on SEE Rate of SRAMs, « Investigation on MCU Clustering Methodologies for CrossSection Estimation of SRAMs, 2015.
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?. V. Gupta, A. Bosser, G. Tsiligiannis, A. Zadeh, A. Javanainen et al., Heavy-ion radiation impact on a 4Mb FRAM under different test conditions, 2015.
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?. A. Bosser, V. Gupta, G. Tsiligiannis, R. Ferraro, C. Frost et al., A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing, RADECS, 2015.
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?. L. Dilillo, A. Bosser, V. Gupta, F. Wrobel, and F. Saigné, Real-Time SRAM Based Particle Detector, 2015.
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?. G. Tsiligiannis, L. Dilillo, V. Gupta, A. Bosio, P. Girard et al., Efficient Dynamic Test Methods for COTS SRAMs Under Heavy-Ion Irradiation, IEEE Nuclear and Space Radiation Effects Conference, 2014.
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?. A. Bosser, L. Dilillo, V. Gupta, A. Javanainen, H. Kettunen et al., Experimental Heavy-Ion SEU Cross-Sections Of Sram Memory Components, Physics Days, pp.11-12, 2014.
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?. V. Gupta, L. Dilillo, F. Wrobel, A. Zadeh, M. Bernard et al., Presentation of the MTCube CubeSat Project, Small Satellites Systems and Services (4S) Symposium, pp.26-30, 2014.
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