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Contribution à l’étude des modes de dégradation des transistors HEMT à base de GaN pour les applications de puissance

Abstract : Power components based on GaN are known by the instability of their electrical characteristics, in particular the threshold voltage and the on-state resistance. This is due to the effects of trapping/de-trapping mechanisms in the structure. The work presented in this memoir consists of two main parts. At the first step, we highlight the effect of a number of switching parameters on the evolution of the dynamic resistance with successive switching cycles. In particular, we analyze the effect of blocking voltage, switching frequency and temperature on the evolution of dynamic resistance. In a second step, we present the results of power cycling tests performed using 80K of junction temperature swing on Normally-ON Al2O3/AlGaN/GaN MOS-HEMTs. Then, we perform trap characterizations, based on the analyses of transient current measurements, during the aging process. The results show that irreversible degradation affects threshold voltage with drift to negative values. These drifts were mainly attributed to cumulative trapping with power cycles, probably induced by hot electrons, in a progressive and non-recoverable way.
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Submitted on : Thursday, December 6, 2018 - 11:52:06 AM
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  • HAL Id : tel-01946672, version 1

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Malika Elharizi. Contribution à l’étude des modes de dégradation des transistors HEMT à base de GaN pour les applications de puissance. Autre. Université Paris Saclay (COmUE), 2018. Français. ⟨NNT : 2018SACLN040⟩. ⟨tel-01946672⟩

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