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Utilisation des transistors GaN dans les chargeurs de véhicule électrique

Abstract : Improvement of power density is a bigchallenge for embedded electric vehicle chargers.Goal of the study is to reduce the volume of the DCDCcharger which contains a bulky transformer. Thekey point is to use wide band gap transistors (GaN) toincrease the charger switching frequency. High switchingfrequency can improve power density but theinconvenient is the increase of switching and transformerlosses. The PhD dissertation is organized inthree steps. First step is the definition of a charger topology.This topology is optimized to reduce transformerlosses. Second part of the study is the theoreticaldesign of a high power density transformer. A completetransformer parametric model is presented withFinite Element Analysis. Third part present the prototypeand test results of the charger DC-DC. Electricalbehavior, volume and efficiency results are discussedin this part.Universit ´
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Submitted on : Wednesday, December 5, 2018 - 4:11:07 PM
Last modification on : Friday, April 10, 2020 - 2:10:30 AM
Document(s) archivé(s) le : Wednesday, March 6, 2019 - 3:32:55 PM


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  • HAL Id : tel-01945931, version 1


Eléonore Taurou. Utilisation des transistors GaN dans les chargeurs de véhicule électrique. Autre. Université Paris-Saclay, 2018. Français. ⟨NNT : 2018SACLC076⟩. ⟨tel-01945931⟩



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