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Conception d'amplificateurs intégrés de puissance en technologies Silicium pour station de base de la quatrième génération des systèmes de radiocommunications cellulaires

Sullivan Plet 1 
1 XLIM-SRF - Systèmes RF
XLIM - XLIM : SRF
Abstract : This research concerns the RF power amplifiers for base stations. The current most competitive technology of RF transistor, the LDMOS, faces the constantly increasing data rate and competition from other technologies such as GaN HEMT. Another challenge is the integration of the output matching made outside of the package which is not compatible with future standards combining up to sixty-four power amplifiers close to each other. A first track proposed in this thesis is the high resistivity Si substrate. From simulations and measurements on wafers, improved passive elements quality factor has been demonstrated but these initial investigations do not allow the integration of the output matching with the current technology, although the results are very encouraging. The technological challenges of this new substrate led to consider the differential structure for amplifiers. Besides to the known advantages of this configuration, we have shown that the design of a differential power amplifier shows a significant improvement in the instantaneous band width meeting the need for higher data rate. This improvement does not degrade other performance as gain, efficiency and output power. In continuation of this thesis, the perspective concerns the design of a power amplifier on a high resistivity Si substrate combined with a differential structure that could enable a major advance over all performance while keeping the advantage of low cost of LDMOS silicon compared to other substrates.
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Sullivan Plet. Conception d'amplificateurs intégrés de puissance en technologies Silicium pour station de base de la quatrième génération des systèmes de radiocommunications cellulaires. Electronique. Université de Limoges, 2016. Français. ⟨NNT : 2016LIMO0095⟩. ⟨tel-01942522⟩

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