S. Bloom, G. Harbeke, E. Meier, I. B. Ortenburger, B. Structure et al., Phys. Status Solidi B, vol.66, issue.1, pp.161-168, 2006.

M. Shur, Physics of semiconductor devices, 1990.

L. Tolbert, B. Ozpineci, S. Islam, and M. S. Chinthavali, Wide bandgap semiconductors for utility applications, Proc. IASTED Multi-Conf.-Power Energy Syst, vol.7, 2003.

A. Lidow, J. Strydom, M. De-rooij, and E. D. Reusch, GaN Transistors for Efficient Power Conversion, 2014.

H. Okumura, Present Status and Future Prospect of Widegap Semiconductor HighPower Devices, vol.45, p.7565, 2006.
DOI : 10.1143/jjap.45.7565
URL : http://iopscience.iop.org/article/10.1143/JJAP.45.7565/pdf

A. Lidow, J. Strydom, M. De-rooij, and E. Y. Ma, « Gallium nitride (GaN) technology overview, pp.1-6, 2012.

B. J. Baliga, Modern power devices, 1987.

E. O. Johnson, « Physical limitations on frequency and power parameters of transistors, RCA Rev, vol.26, pp.27-34, 1965.
DOI : 10.1142/9789814503464_0032

R. W. Keyes, « Figure of merit for semiconductors for high-speed switches, Proc. IEEE, vol.60, pp.225-225

R. Kumaresan, H. Umezawa, and E. S. Shikata, « Vertical structure Schottky barrier diode fabrication using insulating diamond substrate, Diam. Relat. Mater, vol.19, issue.10, pp.1324-1329, 2010.
DOI : 10.1016/j.diamond.2010.06.019

S. Y. Ren and J. D. Dow, Lattice-matching SiC substrates with GaN, vol.69, pp.251-253, 1996.
DOI : 10.1063/1.117940

A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu et al., « The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer, J. Cryst. Growth, vol.128, issue.1, pp.391-396, 1993.

J. Li, M. Mastro, and E. A. Dadgar, III-V Compound semiconductors: integration with silicon-based microelectronics, 2011.

M. Tim, P. Eric, B. Andrea, and G. Felix, « GaN in a Silicon world : competition or coexistence?, APEC 2016

W. Chikhaoui, Etude des mécanismes physiques responsables des dysfonctionnements des transistors HEMTs à base d'hétérostructures AlGaN/GaN et AlInN/GaN », phdthesis, 2011.

F. Shi, GaN Nanowires Fabricated by Magnetron Sputtering Deposition, 2011.
DOI : 10.5772/16355
URL : http://www.intechopen.com/download/pdf/16569

A. Bykhovski, B. Gelmont, and M. Shur, « The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure, J. Appl. Phys, vol.74, issue.11, pp.6734-6739, 1993.

E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao et al., « Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors », Appl. Phys. Lett, vol.71, pp.2794-2796, 1997.

P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. V. Hove et al., Piezoelectric charge densities in AlGaN/GaN HFETs, vol.33, pp.1230-1231, 1997.

R. Gaska, M. S. Shur, A. D. Bykhovski, A. O. Orlov, and G. L. Snider, Electron mobility in modulation-doped AlGaN-GaN heterostructures, vol.74, pp.287-289, 1999.

A. Martin, « Etude d'une nouvelle filière de composants sur technologie nitrure de gallium. Conception et réalisation d'amplificateurs distribués de puissance large bande à cellules cascodes en montage flip-chip et technologie MMIC. », phdthesis, 2007.

U. K. Mishra, P. Parikh, Y. Wu, and . Algan, GaN HEMTs-an overview of device operation and applications, Proc. IEEE, vol.90, pp.1022-1031, 2002.

T. Mimura, S. Hiyamizu, T. Fujii, and E. K. Nanbu, « A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions, vol.19, pp.225-227, 1980.
DOI : 10.1143/jjap.19.l225
URL : http://iopscience.iop.org/article/10.1143/JJAP.19.L225/pdf

W. B. Lanford, T. Tanaka, Y. Otoki, and E. I. Adesida,

, GaN HEMT with high threshold voltage, Electron. Lett, vol.41, issue.7, pp.449-450, 2005.

Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, « Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode, IEEE Trans. Electron Devices, vol.53, issue.9, pp.2207-2215, 2006.

C. Yi, R. Wang, W. Huang, W. C. Tang, K. M. Lau et al., Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment, pp.389-392, 2007.

S. Davis, « Enhancement mode GaN mosfet delivers impressive performance, 2010.

X. Hu, G. Simin, J. Yang, M. A. Khan, R. Gaska et al., « Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate, Electron. Lett, vol.36, issue.8, pp.753-754, 2000.

M. Ishida, T. Ueda, T. Tanaka, D. Ueda, and S. Gan-on, IEEE Trans. Electron Devices, vol.60, issue.10, pp.3053-3059, 2013.

O. Hilt, E. Bahat-treidel, A. Knauer, F. Brunner, R. Zhytnytska et al., Highvoltage normally-off GaN power transistors on SiC and Si substrates, vol.40, pp.418-424, 2015.

D. Marcon, Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology, vol.9363, 2015.

M. Murphy, « Cascode circuit employing a depletion-mode, GaN-based FET », US7501670, vol.2, pp.10-2009

W. Zhang, Z. Xu, Z. Zhang, F. Wang, L. M. Tolbert et al., « Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter, Energy Conversion Congress and Exposition (ECCE), pp.3571-3578, 2013.

«. Systems,

«. Epc-»,

. Disponible,

«. Epc2019,

. Disponible,

K. Zang, L. Wang, S. Chua, and C. V. Thompson, « Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111) », janv, 2004.

U. K. Mishra, P. Parikh, Y. Wu, and . Algan, GaN HEMTs-an overview of device operation and applications, Proc. IEEE, vol.90, pp.1022-1031, 2002.

J. Joh and J. A. Del-alamo, Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors, pp.1-4, 2006.

G. Meneghesso, Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives, vol.8, pp.332-343, 2008.

M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and E. F. Fantini, « Investigation of HighElectric-Field Degradation Effects in AlGaN/GaN HEMTs, vol.55, pp.1592-1602, 2008.

G. Meneghesso, Reliability issues of Gallium Nitride High Electron Mobility Transistors, vol.2, pp.39-50

J. A. Del-alamo, J. Joh, H. Gan, and . Reliability, Microelectron. Reliab, vol.49, issue.9, pp.1200-1206, 2009.

I. L. Guy, S. Muensit, and E. M. Goldys, « Extensional piezoelectric coefficients of gallium nitride and aluminum nitride, Appl. Phys. Lett, vol.75, pp.4133-4135, 1999.

S. R. Lee, « In situ measurements of the critical thickness for strain relaxation in AlGaN?GaN heterostructures, Appl. Phys. Lett, vol.85, p.6164, 2004.

D. W. Gotthold, S. P. Guo, R. Birkhahn, B. Albert, D. Florescu et al., « Timedependent degradation of AlGaN/GaN heterostructures grown on silicon carbide, J. Electron. Mater, vol.33, issue.5, pp.408-411

P. Makaram, J. Joh, J. A. Del-alamo, T. Palacios, and C. V. Thompson, « Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett, vol.96, issue.23, p.233509, 2010.

J. Joh and J. A. Del-alamo, « Critical Voltage for Electrical Degradation of GaN HighElectron Mobility Transistors, IEEE Electron Device Lett, vol.29, issue.4, pp.287-289, 2008.

M. Meneghini, E. Zanoni, and G. Meneghesso, « Gallium nitride based HEMTs for power applications: High field trapping issues, pp.1-4, 2014.
DOI : 10.1109/icsict.2014.7021210

J. Joh and J. A. Del-alamo, « A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors, IEEE Trans. Electron Devices, vol.58, issue.1, pp.132-140, 2011.

C. Hu and T. Hashizume, « Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress, J. Appl. Phys, vol.111, issue.8, p.84504, 2012.

C. Ostermaier, « Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure », Microelectron. Reliab, vol.52, issue.9, pp.1812-1815, 2012.

M. Silvestri, M. J. Uren, and M. Kuball, « Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section, Appl. Phys. Lett, vol.102, issue.7, p.73501, 2013.
DOI : 10.1063/1.4793196

D. W. Cardwell, « Spatially-resolved spectroscopic measurements of Ec ? 0.57 eV traps in AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett, vol.102, p.193509, 2013.
DOI : 10.1063/1.4806980

M. Meneghini, G. Meneghesso, and E. E. Zanoni, Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation, vol.13, pp.357-361, 2013.

R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, vol.48, pp.560-566, 2001.

M. Meneghini, O. Hilt, J. Wuerfl, and G. Meneghesso, Technology and Reliability of normally-off GaN HEMTs with p-Type Gate », Energies, vol.10, p.153, 2017.
DOI : 10.3390/en10020153
URL : https://www.mdpi.com/1996-1073/10/2/153/pdf

E. Zanoni, « Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing, IEEE Electron Device Lett, vol.30, issue.5, pp.427-429, 2009.
DOI : 10.1109/led.2009.2016440

M. Meneghini, Gate Stability of GaN-Based HEMTs with P-Type Gate », Electronics, vol.5, p.14, 2016.
DOI : 10.3390/electronics5020014
URL : https://www.mdpi.com/2079-9292/5/2/14/pdf

T. L. Wu, « Forward Bias Gate Breakdown Mechanism in Enhancement-Mode pGaN Gate AlGaN/GaN High-Electron Mobility Transistors, IEEE Electron Device Lett, vol.36, issue.10, pp.1001-1003, 2015.
DOI : 10.1109/led.2015.2465137

M. ?apajna, O. Hilt, E. Bahat-treidel, J. Würfl, and J. Kuzmík, Gate Reliability Investigation in normally-off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress, vol.37, pp.385-388, 2016.

M. Meneghini, Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions, vol.52, pp.8-17, 2013.

N. Herbecq, « 1900 V, 1.6 m? cm2 AlN/GaN-on-Si power devices realized by local substrate removal, Appl. Phys. Express, vol.7, issue.3, p.34103, 2014.

M. Meneghini, « Reliability and failure analysis in power GaN-HEMTs: An overview, 2017 IEEE International Reliability Physics Symposium (IRPS, 2017.

G. Meneghesso, Reliability and parasitic issues in GaN-based power HEMTs: a review, vol.31, p.93004, 2016.

P. Moens, Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs, 2015.

D. Bisi, « Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MISHEMTs, vol.35, issue.10, pp.1004-1006, 2014.

G. Meneghesso, Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements, vol.28, p.74021, 2013.

M. Meneghini, Negative Bias-Induced Threshold Voltage Instability in GaN-onSi Power HEMTs, vol.37, pp.474-477, 2016.

S. R. Bahl, M. V. Hove, X. Kang, D. Marcon, M. Zahid et al., « New sourceside breakdown mechanism in AlGaN/GaN insulated-gate HEMTs, 2013 25th International Symposium on Power Semiconductor Devices IC's (ISPSD), pp.419-422, 2013.

M. Meneghini, « OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

, Trans. Electron Devices, vol.61, issue.6, 1987.

I. Rossetto, Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation, vol.64, pp.73-77, 2017.

. Meneghini, « Extensive Investigation of Time-Dependent Breakdown of GaNHEMTs Submitted to OFF-State Stress, IEEE Trans. Electron Devices, vol.62, issue.8, pp.2549-2554, 2015.

C. Fleury, Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications, vol.53, pp.1444-1449, 2013.

A. Guo and J. A. Del-alamo, 2016 IEEE International Reliability Physics Symposium (IRPS), pp.4-5, 2016.

X. Li, G. Xie, C. Tang, and K. Sheng, Charge trapping related channel modulation instability in P-GaN gate HEMTs, vol.65, pp.35-40, 2016.

T. L. Wu, « The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate, 2015 IEEE 27th International Symposium on Power Semiconductor Devices IC's (ISPSD), pp.225-228, 2015.

S. Warnock and J. A. Del-alamo, 2016 IEEE International Reliability Physics Symposium (IRPS), pp.4-6, 2016.

I. Rossetto, « Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp.35-38, 2016.

I. Rossetto, « Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate, IEEE Trans. Electron Devices, vol.63, issue.6, pp.2334-2339, 2016.

G. Meneghesso, F. Zanon, M. J. Uren, and E. E. Zanoni, Anomalous Kink Effect in GaN High Electron Mobility Transistors, vol.30, pp.100-102, 2009.

B. Paine, C. Ignacio, and S. Polmanter, DC Characterization of GaN HEMTs with Slow Traps, 2015.

«. Jesd, , vol.22

«. Jesd, Stress-Test-Driven Qualification of Integrated Circuits ». JEDEC Standards Document, vol.47

«. Jesd85, Methods for Calculating Failure Rates in Units of Fits

«. Jep, 122: Failure Mechanism and Models for Semiconductor Devices

«. Jesd-89, Soft Errors

«. Jesd-78, Latchup Testing

«. Jesd-47, A114F ESD Testing

«. Jc, 14: Quality and Reliability of Sold-State Products

D. Marcon, « A comprehensive reliability investigation of the voltage-, temperatureand device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs, 2010 International Electron Devices Meeting, 2010.

E. A. Douglas, « Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors, Microelectron. Reliab, vol.52, issue.1, pp.23-28

S. Lenci, Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics, 2012.

J. W. Mcpherson, Time dependent dielectric breakdown physics-Models revisited, vol.52, pp.1753-1760, 2012.

E. Zanoni, M. Meneghini, A. Chini, D. Marcon, and G. Meneghesso, « AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction, IEEE Trans. Electron Devices, vol.60, issue.10, pp.3119-3131, 2013.

K. Son, « GaN-based high-temperature and radiation-hard electronics for harsh environments, p.76790, 2010.

J. W. Mcpherson, Brief history of JEDEC qualification standards for silicon technology and their applicability(?) to WBG semiconductors, 2018 IEEE International Reliability Physics Symposium (IRPS), pp.3-4, 2018.

A. Guédon-gracia, Contribution à la conception thermo-mécanique optimisée d'assemblages sans plomb, vol.1, 2005.

J. Delétage, Etude de la durée de vie d'assemblages microélectroniques par l'utilisation de simulations, de modèles de dégradation et de circuits intégrés spécifiques de test, vol.1, 2003.

M. Meneghini, E. Zanoni, and G. Meneghesso, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-4, 2014.

J. Joh and J. A. Del-alamo, Mechanisms for Electrical Degradation of GaN HighElectron Mobility Transistors, pp.1-4, 2006.

R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, vol.48, pp.560-566, 2001.

Y. Xie and P. Brohlin, Optimizing GaN performance with an integrated driver, Texas instruments

D. J. Lichtenwalner, 2018 IEEE International Reliability Physics Symposium (IRPS), pp.2-2, 2018.

W. J. Reichenecker, Electrical conductivity of the copper-tin intermetallic compound Cu_3Sn in the temperature range-195 degrees C+ 150 degrees C », Welding Journal, 1980.