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Caractérisation de diodes Schottky en diamant de structure pseudo-verticale

Abstract : Diamond is considered as the ultimate semiconductor for power electronics applications. Even if diamond semiconductor devices have been realized worldwide, it is still prototype or proof of concept devices. It is then necessary to understand how do they operate to use their entire benefits in power converters. In this thesis, we focused the analysis on pseudo-vertical diamond Schottky diodes. Firstly, static and switching characterizations have been realized. They allow us to extract devices characteristics in the way to integrate them in power converters to analyze their switching abilities. Management of diodes in power converters is then studied. These studies allow us to propose device structure modifications in the way to improve diodes performances and their integration in power converters. Finally, a theoretical analysis on a diamond Schottky diode performances in a power converter is realized. It has been compared to the performances of a SiC Schottky diode. It highlights the particularities of diamond devices and the benefits they might bring to power electronics applications.
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Submitted on : Tuesday, November 20, 2018 - 10:02:07 AM
Last modification on : Wednesday, October 14, 2020 - 4:17:59 AM


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  • HAL Id : tel-01927746, version 1



Gaëtan Perez. Caractérisation de diodes Schottky en diamant de structure pseudo-verticale. Energie électrique. Université Grenoble Alpes, 2018. Français. ⟨NNT : 2018GREAT051⟩. ⟨tel-01927746⟩



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