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Spin-polarized current-induced domain wall motion in CoFeB nanowires

Abstract : This thesis is dedicated to the research of the static and dynamic properties of magnetic Domain Walls (DWs) in CoFeB nanowires. A measurement system based on a high-resolution Kerr microscope was implemented and used for these research.First, phenomena related to the DW surface tension was studied. A spontaneous collapse of domain bubbles was directly observed using the Kerr microscope. This phenomenon was explained using the concept of the Laplace pressure due to the DW surface energy. The surface energy of DW was quantified by measuring the external field required to stabilize these bubbles. The DW pinning and depinning mechanism in some artificial geometries, such as the Hall cross or the entrance connecting a nucleation pad and a wire, was explained using the concept of DW surface tension and was used to extract the DW surface energy. Benefited from these studies, a method to directly quantify the coefficient of Dzyaloshinskii- Moriya Interactions (DMI) using Kerr microscope has been proposed. In addition, a new type of magnetic sensor based on the revisable expansion of DW due to DW surface tension was proposed and verified using micromagnetic simulations.Second, the dynamic properties of DWs in Ta/CoFeB/MgO film and wires were studied. The velocity of DW motion induced by magnetic fields or by the combined effect of synchronized magnetic field pulses and electrical current pulses was measured. In steady flow regime, the velocity of DW motion induced by the combined effect of the field and the current equals to the superposition of the velocities driven by field or current independently. This result allowed us to extract the spin-polarization of CoFeB in this structure. Pinning effects of DW motion in narrow wires was studied. Depinning fields of hard pinning sites for the field-driven DW motion in nanowires was measured. It was found that the pinning effects become severer as the width w of the wires scaled down. A linear relationship between the depinning field and w was found. The origin of these hard pinning sites, as well as their influences on the DW motion velocity, was discussed. Furthermore, it was found that the pinning effect was enhanced when a current was applied, no matter the relative direction between the DW motion and the current. We propose a possible explanation, which would be an effect of the spin Hall current from the sublayer (Ta). Although there was no DMI or in-plane field, the spin Hall current, which was polarized in the transverse direction, can still exert a torque on the Bloch DW, once the DW tilts away from the transverse direction.At last, a ring-shaped racetrack memory based on the combined work of STT and has been proposed. Compared with the traditional line-shaped racetrack memory, this ring-shaped memory allows the DW moving in a ring-shaped nanowire and the data dropout problem can be avoided. The design and optimization work was performed with micromagnetic simulations.
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Submitted on : Friday, November 16, 2018 - 1:02:07 AM
Last modification on : Wednesday, October 14, 2020 - 4:10:36 AM
Long-term archiving on: : Sunday, February 17, 2019 - 12:41:43 PM


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  • HAL Id : tel-01924456, version 1


Xueying Zhang. Spin-polarized current-induced domain wall motion in CoFeB nanowires. Micro and nanotechnologies/Microelectronics. Université Paris Saclay (COmUE), 2018. English. ⟨NNT : 2018SACLS104⟩. ⟨tel-01924456⟩



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