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Étude des mécanismes de déclenchement des Bits Collés dans les SRAM et DRAM en Environnement Radiatif Spatial

Axel Rodriguez 1, 2
Abstract : CNES’s onboard experiment results on several satellites have demonstrated that on SRAM and SDRAM memories, a fraction of words suffers from unknown errors that increase the afflicted words’ rate of error by orders of magnitude compared to other words. CNES’s experts found that these errors were due to the space radiation environment (proton, electrons, heavy ions).The main goals of this Ph.D. thesis are to successfully recreate such errors at ground level using irradiation facilities and particle accelerators, to investigate their behavior and finally, to submit a physical mechanism for memory cell degradation under irradiation, both coherent with experimental data and data obtained from TCAD simulations.
Keywords : Testing Proton Neutron
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Theses
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Submitted on : Friday, November 9, 2018 - 4:13:06 PM
Last modification on : Tuesday, May 28, 2019 - 5:10:09 PM
Document(s) archivé(s) le : Sunday, February 10, 2019 - 2:39:44 PM

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  • HAL Id : tel-01917745, version 1

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Axel Rodriguez. Étude des mécanismes de déclenchement des Bits Collés dans les SRAM et DRAM en Environnement Radiatif Spatial. Electronique. Université Montpellier, 2017. Français. ⟨NNT : 2017MONTS032⟩. ⟨tel-01917745⟩

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