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Dopage de couches de GaN sur substrat silicium par implantation ionique

Abstract : GaN-based devices and their alloys are increasingly present in our daily lives with the exponential development of light-emitting diodes (LEDs). Although the majority of commercial production is currently carried out on sapphire substrates, silicon, available in larger diameters and at a lower cost, is increasingly seen as the substrate of the future for the development of GaN technologies. The use of this substrate should also allow the development of the GaN power electronics market based on high electron mobility transistors (HEMTs) whose performances exceed the limits of silicon technologies. Nevertheless, in order to allow or facilitate the development of advanced devices, specific processes are necessary such as doping by ion implantation. The use of GaN raises new problems for these technological bricks.During this thesis we therefore sought to implement the ion implantation doping process of GaN and its study within the CEA-LETI while focusing mainly on p doping by Mg implantation. We have identified the main issues related to the intrinsic properties of the material (difficulty of p-doping, instability at high temperatures...) and the most promising solutions in the literature. We then sought to implement our own process by developing in-situ protective layers to allow high temperature annealing of the implanted layers. This enabled the study of the evolution kinetics of the implanted layers during "conventional" annealing (ramps < 10 °C/min, duration of several tens of minutes, T < 1100 °C) using photoluminescence (µ-PL) and X-ray diffraction (XRD) characterizations. We also evidenced a diffusion and aggregation effect at high temperature of the implanted Mg. We then sought to modify the implantation process (channeled implantation, co-implantation) to promote the integration of the dopant and limit the formation of defects. In parallel we evaluated the interest of secondary annealing (Rapid thermal annealing (RTA), laser annealing, microwave) in order to finalize the activation of the dopant. Finally we also set up an electrical characterization process for doped GaN layers in the laboratory.
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Submitted on : Tuesday, October 30, 2018 - 2:13:07 PM
Last modification on : Thursday, June 11, 2020 - 5:04:07 PM


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  • HAL Id : tel-01908693, version 1




Aurélien Lardeau-Falcy. Dopage de couches de GaN sur substrat silicium par implantation ionique. Science des matériaux [cond-mat.mtrl-sci]. Université Grenoble Alpes, 2018. Français. ⟨NNT : 2018GREAY024⟩. ⟨tel-01908693⟩



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