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LixCoO₂-based thin films and devices for potential application to nonvolatile resistive memories

Abstract : Flash memory is now extensively used as non-volatile memory for digital data storage in most mobile electronic devices (laptop, mobile phone, tablet...). To overcome its current limits (e.g. low information density, low endurance and slow speed), many researches recently developed around the concept of resistive memories based on the switching between different resistance levels by applying appropriate bias voltages.Memories whose resistance variations depend on electrochemical reactions (ReRAM) are potentially good candidates towards next-generation non-volatile memories. The underlying redox mechanisms observed are however often of the filamentary type, involving in particular migration of cations of metal elements (coming from the electrodes), or oxygen vacancies. This filamentary character makes it challenging to attain extreme downscaling towards the nanometric scale.In this thesis, a particular class of materials - used in the field of energy storage - is studied. The aim is to investigate the origin of the resistance switching processes observed in LixCoO2 films. We first characterize the structural and electrical properties of such films, as well as the electrical behaviors of the devices elaborated therefrom. We then investigate the electrochemical mechanisms which are at the origin of resistive switching, in the micrometric electrode/film/electrode configuration. We try to determine the validity of a formerly proposed mechanism which was however not yet demonstrated. Furthermore, we study the experimental switching kinetics of devices, and propose a numerical model to explain the results observed. Finally, we examine the potential applicability of LixCoO2-based devices to Re-RAM memories through the study of their performances in terms of endurance (i.e. maximum number of write/erase cycles) and retention. Specifically, the influence of several parameters (such as voltage pulses, chemical nature of the electrodes, temperature etc.) on these performances is investigated.
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https://tel.archives-ouvertes.fr/tel-01900130
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Submitted on : Sunday, October 21, 2018 - 1:03:08 AM
Last modification on : Wednesday, October 14, 2020 - 4:10:37 AM
Long-term archiving on: : Tuesday, January 22, 2019 - 12:29:27 PM

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  • HAL Id : tel-01900130, version 1

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Van-Son Nguyen. LixCoO₂-based thin films and devices for potential application to nonvolatile resistive memories. Micro and nanotechnologies/Microelectronics. Université Paris Saclay (COmUE), 2017. English. ⟨NNT : 2017SACLS344⟩. ⟨tel-01900130⟩

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