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Conception d’amplificateurs de puissance en technologie CMOS pour le standard LTE

Abstract : The LTE standard has been intended for mobile communications. Focusingnot only on higher data rate, LTE now aims at an implementation for the Internetof Things (IoT). The main challenge, in the perspective of a LTE front-end fully manufacturedin a low-cost and high integration level CMOS technology, remains the design ofpower amplifiers (PA). Furthermore, the use of complex quadrature modulation resultsin stringent linearity requirements resulting in an important quiescent dc consumption.In this context, this work focuses on the research of devices and circuits generatinghigh output power and solving the compromise between linearity and consumption ofthe PA. Two strands of work are identified and developed in this thesis. The first oneuses a power transistor available in CMOS technology. Three power cells based on thisdevice are proposed, with detailed theoretical and experimental results. In the secondone, this transistor is then used in a fully-integrated CMOS PA. A design methodologyfor integrated transformers is also presented. The proposed fully-integrated PA is reconfigurablein order to address the main LTE challenges : output power, high linearity andlow consumption.
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Submitted on : Wednesday, October 17, 2018 - 9:29:19 AM
Last modification on : Tuesday, May 14, 2019 - 4:49:45 PM
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  • HAL Id : tel-01897305, version 1


Fabien Mesquita. Conception d’amplificateurs de puissance en technologie CMOS pour le standard LTE. Electronique. Université de Bordeaux, 2018. Français. ⟨NNT : 2018BORD0070⟩. ⟨tel-01897305⟩



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