B. Ceccaroli and O. Lohne, Solar Grade Silicon Feedstock, 2011.
DOI : 10.1002/9780470974704.ch5

L. Arnberg, M. D. Sabatino, and E. Ovrelid, « State-of-the-art growth of silicon for PV applications, J. Cryst. Growth, vol.360, pp.56-60, 2012.

A. Richter, M. Hermle, and S. W. Glunz, « Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells, IEEE J. Photovolt, vol.3, issue.4, pp.1184-1191, 2013.

O. , A. Danel, and A. Valla, Résultats interne CEA-INES non publiés, 2015.

V. Popovich, Microstructure and Mechanical Aspects of Multicrystalline Silicon Solar Cells, 2013.

E. Felder, Usinage par abrasion Analyses expérimentale et théorique, Tech. Ing. Génie Mécanique, vol.1, p.7053, 2009.

F. Coustier, J. Penot, G. Sanchez, and M. Ly, « Diamond wire sawing: State of the art and perspectives, Photovoltaics International, vol.15, 2012.

H. J. Möller, « Basic Mechanisms and Models of Multi-Wire Sawing, Adv. Eng. Mater, vol.6, issue.7, pp.501-513, 2004.

A. Bidiville, K. Wasmer, R. Kraft, and C. Ballif, « Diamond wire-sawn silicon wafers-from the lab to the cell production, Proceedings of the 24th EU PV-SEC, pp.1400-1405, 2009.

S. Würzner, A. Falke, R. Buchwald, and H. J. Möller, « Determination of the impact of the wire velocity on the surface damage of diamond wire sawn silicon wafers, Energy Procedia, vol.77, pp.881-890, 2015.

M. Buijs and K. K. Houten, Three-body abrasion of brittle materials as studied by lapping, vol.166, pp.237-245, 1993.
DOI : 10.1016/0043-1648(93)90267-p

P. Coligny, Analysis and optimizationof silicon wafers wire sawing, 2002.
URL : https://hal.archives-ouvertes.fr/tel-00006493

A. Bidiville, K. Wasmer, J. Michler, P. M. Nasch, M. Van-der-meer et al., Mechanisms of wafer sawing and impact on wafer properties, vol.18, pp.563-572, 2010.
DOI : 10.1002/pip.972

A. Bidiville, I. Neulist, K. Wasmer, and C. Ballif, « Effect of debris on the silicon wafering for solar cells, Sol. Energy Mater. Sol. Cells, vol.95, issue.8, pp.2490-2496, 2011.

R. Buchwald, « Analysis of the topography and the sub-surface damage of Cz-and mcsilicon wafers sawn with diamond wire, vol.38, pp.901-909, 2013.

C. Yang, F. Mess, S. N. Melkote, and S. Danyluk, Tribologically-induced Damage in Cutting and Polishing of Silicon, vol.2, pp.138-143, 2013.

V. Popovich, A. Riemslag, M. Janssen, I. Bennett, and I. Richardson, « Characterization of Multicrystalline Silicon Solar Wafers Fracture Strength and Influencing Factors », Int. J. Mater. Sci, 2013.

K. Wasmer, « Effects of edge defects induced by multi-wire sawing on the wafer strength, Proceedings of the 23rd EU PV-SEC, pp.1305-1310, 2008.

J. D. , Penot, « Surface finish and mechanical strength of diamond wire sawn wafers, Freiberg Sawing Symposium, 2015.

C. Yang, F. Mess, K. Skenes, S. Melkote, and S. Danyluk, « On the residual stress and fracture strength of crystalline silicon wafers, Appl. Phys. Lett, vol.102, issue.2, 2013.

H. J. Möller, C. Funke, M. Rinio, and E. S. Scholz, « Multicrystalline silicon for solar cells, Thin Solid Films, vol.487, issue.2, pp.179-187, 2005.

H. Wu, Fundamental Investigations of Cutting of Silicon for Photovoltaic Applications, 2012.

B. Sopori, « Characterizing damage on Si wafer surfaces cut by slurry and diamond wire sawing, Conference Record of the IEEE Photovoltaic Specialists Conference, pp.945-950, 2013.

A. M. Kovalchenko and Y. V. Milman, On the cracks self-healing mechanism at ductile mode cutting of silicon, Tribol. Int, vol.80, pp.166-171, 2014.

P. S. Sreejith and B. K. Ngoi, « Material removal mechanisms in precision machining of new materials », Int. J. Mach. Tools Manuf, vol.41, pp.1831-1843, 2001.

M. Tanaka and K. Higashida, « Crack tip dislocations revealed by electron tomography in silicon single crystal, Scripta Materialia, vol.59, issue.8, pp.901-904, 2008.

Y. Q. Wu and Y. B. Xu, « Direct evidence for microplastic fracture in single-crystal silicon at ambient temperature, Philos. Mag. Lett, vol.78, issue.1, pp.9-13, 1998.

P. K. Kulshreshtha, K. M. Youssef, and G. Rozgonyi, « Nano-indentation: A tool to investigate crack propagation related phase transitions in PV silicon, Sol. Energy Mater. Sol. Cells, vol.96, issue.1, pp.166-172, 2012.

H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgärtel, Anisotropic Etching of Crystalline Silicon in Alkaline Solutions I. Orientation Dependence and Behavior of Passivation Layers, J. Electrochem. Soc, vol.137, issue.11, pp.3612-3626, 1990.

H. Robbins and B. Schwartz, « Chemical Etching of Silicon II. The System, and, J. Electrochem. Soc, vol.107, issue.2, pp.108-111, 1960.

B. R. Lawn, A. G. Evans, and D. B. Marshall, « Elastic/Plastic Indentation Damage in Ceramics: The Median/Radial Crack System, J. Am. Ceram. Soc, vol.63, issue.9, pp.574-581, 1980.

T. Liu, P. Ge, W. Bi, and Y. Gao, « Subsurface crack damage in silicon wafers induced by resin bonded diamond wire sawing, Mater. Sci. Semicond. Process, vol.57, pp.147-156, 2017.

F. Ebrahimi and L. Kalwani, Fracture anisotropy in silicon single crystal, Mater. Sci. Eng. A, vol.268, issue.2, pp.116-126, 1999.

K. Hayashi, S. Tsujimoto, Y. Okamoto, and T. Nishikawa, « Fracture Toughness of Single Crystal Silicon, J. Soc. Mater. Sci. Jpn, vol.40, pp.405-410, 1991.

Y. F. Gao and P. Q. Ge, Analysis of Grit Cut Depth in Fixed-Abrasive Diamond Wire Saw Slicing Single Crystal Silicon, Solid State Phenom, vol.175, pp.72-76, 2011.

A. Grun, A. Lawerenz, R. Porytskyy, and O. Anspach, « Investigation of wafer surfaces with space-resolved breaking strength tests and corresponding analysis of the crack depth, Proceedings of 26th European Photovoltaic Solar Energy Conference and Exhibition, pp.5-9, 2011.

J. D. Penot, Résultats internes CEA non publiés, 2013.

Y. Lee, Evaluating subsurface damage in optical glasses, J. Eur. Opt. Soc.-Rapid Publ, vol.6, issue.0, 2011.

J. Acker, T. Koschwitz, B. Meinel, R. Heinemann, and C. Blocks, HF/HNO3 Etching of the Saw Damage », Energy Procedia, vol.38, pp.223-233, 2013.

L. A. Kazakevich, P. P. Lugakov, and I. M. Filippov, « The effect of dislocations on the chargecarrier recombination processes in irradiated silicon, Phys. Status Solidi A, vol.82, issue.2, pp.511-518, 1984.

C. Donolato, « Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor, J. Appl. Phys, vol.84, issue.5, pp.2656-2664, 1998.

D. P. Joshi, « Carrier recombination at grain boundaries in polycrystalline silicon under optical illumination, Solid-State Electron, vol.29, issue.1, pp.19-24, 1986.

V. Amaral-de and . Oliveira, Influence of processing parameters on the generation and propgataion of electrically active crystalline defects in monolike silicon, 2016.

A. G. Aberle, U. Of, and N. S. Wales, « Crystalline silicon solar cells : advanced surface passivation and analysis, 1999.

F. Lévy, Physique et technologie des semiconducteurs », PPUR presses polytechniques, 1995.

B. Sopori, S. Devayajanam, and P. Basnyat, Using minority carrier lifetime measurement to determine saw damage characteristics on Si wafer surfaces, 2015 IEEE 42nd Photovoltaic Specialist Conference, 2015.

B. Sopori, S. Devayajanam, and P. Basnyat, « A method for determining average damage depth of sawn crystalline silicon wafers, Rev. Sci. Instrum, vol.87, issue.4, 2016.

B. Sopori, « Analyses of diamond wire sawn wafers: Effect of various cutting parameters, 2015 IEEE 42nd Photovoltaic Specialist Conference, 2015.

T. Wang and T. F. Ciszek, Effects of sample inhomogeneity and geometry on photoconductivity decay, pp.88-98, 1998.

M. Ernst and R. Brendel, « Modeling effective carrier lifetimes of passivated macroporous silicon layers, Sol. Energy Mater. Sol. Cells, vol.95, issue.4, pp.1197-1202, 2011.

A. Jouini, « Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells, Prog. Photovolt. Res. Appl, vol.20, issue.6, pp.735-746, 2011.

C. Yang, F. Mess, K. Skenes, S. Melkote, and S. Danyluk, « On the residual stress and fracture strength of crystalline silicon wafers, Appl. Phys. Lett, vol.102, issue.2, 2013.

P. Cloetens, « Observation of microstructure and damage in materials by phase sensitive radiography and tomography, J. Appl. Phys, pp.5878-5886, 1997.

E. Maire, L. Salvo, P. Cloetens, and M. D. Michiel, Tomographie à rayons X appliquée à l'étude des matériaux », Tech. Ing. Matér. Métalliques, n o IN20, 2004.

G. Mula, « Doping porous silicon with erbium: Pores filling as a method to limit the Erclustering effects and increasing its light emission, Sci. Rep, vol.7, 2017.

G. Mula, Controlling the Er content of porous silicon using the doping current intensity, Nanoscale Res Lett, 2014.

. Mtiinstruments, . Wafer-thickness, . Bow, &. Warp, ». Ttv-accurate-measurement et al.,

J. Ruste, Microscopie électronique à balayage-Principe et équipement », Techniques de l'ingénieur, 2013.

A. Benatmane, « Développement de la microscopie interférométrique pour une meilleure analyse morphologique des couches minces et épaisses des matériaux semi-conducteurs et optiques, 2002.

L. Bebay, Résultats interne CEA non publiés, 2017.

R. Artigas, Optical Measurement of Surface Topography, pp.237-286, 2011.

G. Roblin, Microscopies optiques à balayage », Techniques de l'ingénieur, 1999.

C. V. Raman and «. , Change of Wave-length in Light Scattering, Nature, vol.121, p.619, 1928.

A. Chabli and . Formation-instn-n-cems-grenoble, , pp.14-2012

J. Yan, T. Asami, and T. Kuriyagawa, « Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy, Precis. Eng, vol.32, issue.3, pp.186-195, 2008.

W. Lu, Z. J. Pei, and J. G. Sun, « Non-destructive evaluation methods for subsurface damage in silicon wafers: a literature review, Int. J. Mach. Mach. Mater, vol.2, issue.1, pp.125-142, 2007.

A. Schwartz, Electron Backscatter Diffraction in Materials Science, 2009.

D. K. Schroder, Semiconductor Material and Device Characterization, 2006.

A. Benayad, H. Hajjaji, F. Coustier, M. Benmansour, and A. Chabli, « Surface chemical-bonds analysis of silicon particles from diamond-wire cutting of crystalline silicon, J. Appl. Phys, vol.120, issue.23, p.235308, 2016.

G. Hollinger, Spectroscopies de photoélectrons: XPS ou ESCA et UPS », Techniques de l'ingénieur, 1986.

M. Dalibart and S. Servant, Spectroscopie dans l'infrarouge », Techniques de l'Ingénieur, 2000.

M. Olivier, N. Rochat, A. Chabli, G. Lefeuvre, and F. Conne, Multiple internal reflection spectroscopy: a sensitive non-destructive probe for interfaces and nanometric layers, Mater. Sci. Semicond. Process, vol.4, issue.1, pp.15-18, 2001.

N. Rochat, A. Chabli, F. Bertin, M. Olivier, C. Vergnaud et al., Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate, J. Appl. Phys, vol.91, issue.8, pp.5029-5034, 2002.

G. Sébastien, P. Jean-loup, and . Le-modèle-de-weibull, , 2006.

W. , A statistical theory of the strength of materials », Ingeniors Vetensk. Akad, 1939.

E. Anastassakis, A. Pinczuk, E. Burstein, F. Pollak, and M. Cardona, « Effect of static uniaxial stress on the Raman spectrum of silicon, Solid State Commun, vol.8, issue.2, pp.133-138, 1970.

I. D. Wolf and . Micro, Raman spectroscopy to study local mechanical stress in silicon integrated circuits, Semicond. Sci. Technol, vol.11, issue.2, p.139, 1996.

T. Englert, G. Abstreiter, and J. Pontcharra, « Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy, Solid-State Electron, vol.23, issue.1, pp.31-33, 1980.

J. Menéndez and M. Cardona, « Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and ? ? Sn : Anharmonic effects, Phys. Rev. B, vol.29, issue.4, pp.2051-2059, 1984.

M. W. Jenkins, « A New Preferential Etch for Defects in Silicon Crystals, J. Electrochem. Soc, vol.124, issue.5, pp.757-762, 1977.

B. Schwartz and H. Robbins, « Chemical Etching of Silicon IV. Etching Technology, J. Electrochem. Soc, vol.123, pp.1903-1909, 1976.

F. Sevenig, L. Breitenstein, A. Oltersdorf, K. Zimmermann, and M. Hermle, « Investigation on the Impact of Metallic Surface Contaminations on Minority Carrier Lifetime of a-Si:H Passivated Crystalline Silicon », Energy Procedia, vol.8, pp.288-293, 2011.

K. Kimura, M. Takahashi, and H. Kobayashi, « Metal Removal and Defect Passivation Performed on Si Wafers for Solar Cell Use by HCN Treatments, ECS J. Solid State Sci. Technol, vol.3, issue.2, pp.11-15, 2014.
DOI : 10.1149/2.007402jss

M. Pawlik, « Etude de la passivation de surface du silicium cristallin type P par dépôt de couches atomiques d'alumine pour application aux cellules solaires à haut rendement, 2015.

J. F. Lelièvre, Elaboration de SiNx:H par PECVD : optimisation des propriétés optiques, passivantes et structurales pour applications photovoltaïques, 2007.

R. Hezel, K. Jaeger, and . Low, Temperature Surface Passivation of Silicon for Solar Cells, J. Electrochem. Soc, vol.136, issue.2, pp.518-523, 1989.

G. Agostinelli, « Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge, Sol. Energy Mater. Sol. Cells, vol.90, pp.3438-3443, 2006.
DOI : 10.1016/j.solmat.2006.04.014

G. Dingemans and W. M. Kessels, « Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells, J. Vac. Sci. Technol. Vac. Surf. Films, vol.30, p.40802, 2012.

R. Kotipalli, R. Delamare, O. Poncelet, X. Tang, L. A. Francis et al., « Passivation effects of atomic-layer-deposited aluminum oxide, EPJ Photovolt, vol.4, issue.45107, 2013.
DOI : 10.1051/epjpv/2013023
URL : https://www.epj-pv.org/articles/epjpv/pdf/2013/01/pv120018.pdf

G. Dingemans, N. M. Terlinden, D. Pierreux, H. B. Profijt, M. C. Van-de-sanden et al., Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al, vol.14, p.1, 2011.

J. Schmidt, B. Veith, and R. Brendel, « Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks, Phys. Status Solidi RRL-Rapid Res. Lett, vol.3, issue.9, pp.287-289, 2009.
DOI : 10.1002/pssr.200903272

H. Nagel, C. Berge, and A. G. Aberle, « Generalized analysis of quasi-steady-state and quasitransient measurements of carrier lifetimes in semiconductors, Journal of Applied Physics, vol.86, issue.11, 1999.

R. A. Sinton, A. L. Blum, and J. S. Swirhun, « Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon, Solid State Phenom, pp.103-109, 2014.
DOI : 10.4028/www.scientific.net/ssp.205-206.103

A. Cuevas and R. A. Sinton, « Characterisation and Diagnosis of Silicon Wafers and Devices, Practical Handbook of Photovoltaics : Fundamentals and Applications, 2003.
DOI : 10.1016/b978-185617457-2/50008-1

K. L. Luke and L. Cheng, Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity, J. Appl. Phys, vol.61, issue.6, pp.2282-2293, 1987.

A. Kumar, S. Kaminski, S. N. Melkote, and C. Arcona, « Effect of wear of diamond wire on surface morphology, roughness and subsurface damage of silicon wafers, Wear, pp.163-168, 2016.

Y. G. Gogotsi, A. Kailer, and K. G. Nickel, « Phase transformations in materials studied by micro-Raman spectroscopy of indentations, Mater. Res. Innov, vol.1, issue.1, pp.3-9, 1997.

A. B. Mann, D. Van-heerden, J. B. Pethica, P. Bowes, and T. P. Weihs, Contact resistance and phase transformations during nanoindentation of silicon, vol.82, pp.1921-1929, 2002.
DOI : 10.1080/01418610210134396

V. Domnich and Y. Gogotsi, Phase Transformations in Silicon Under Contact Loading, vol.3, pp.1-36, 2002.

Z. Zeng, Q. Zeng, W. L. Mao, and S. Qu, « Phase transitions in metastable phases of silicon, J. Appl. Phys, vol.115, issue.10, p.103514, 2014.

M. M. Khayyat, G. K. Banini, D. G. Hasko, and M. M. Chaudhri, « Raman microscopy investigations of structural phase transformations in crystalline and amorphous silicon due to indentation with a Vickers diamond at room temperature and at 77 K », J. Phys. Appl. Phys, vol.36, pp.1300-1307, 2003.

K. Andreas, G. Nickel-klaus, G. Yury, and G. , « Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations, J. Raman Spectrosc, vol.30, issue.10, pp.939-946, 1999.

I. Kashkoush, G. Chen, D. Nemeth, and J. Rieker, « Wafer surface preparation for highefficiency solar cells, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), pp.1211-1213, 2014.
DOI : 10.1109/pvsc.2014.6925132

C. Kranz, « Industrial Cleaning Sequences for Al2O3-passivated PERC Solar Cells, Energy Procedia, vol.55, pp.211-218, 2014.
DOI : 10.1016/j.egypro.2014.08.121
URL : https://doi.org/10.1016/j.egypro.2014.08.121

S. Meyer, S. Wahl, S. Timmel, R. Köpge, and B. Jang, The impact of wafering on organic and inorganic surface contaminations, vol.378, pp.384-387, 2016.

M. F. Hochellajr and A. H. Carim, « A reassessment of electron escape depths in silicon and thermally grown silicon dioxide thin films, Surface science letters, vol.197, issue.3, pp.260-268, 1988.

P. J. Grunthaner, « The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface, J. Appl. Phys, pp.629-638, 1987.

J. F. Moulder, « Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data, 1995.

M. Casamassima, E. Darque-ceretti, A. Etcheberry, and M. Aucouturier, « Correlation between Lewis donor/acceptor properties determined by XPS and Brönsted acid/base properties determined by rest-potential measurements, for aluminium and silicon oxides, J. Mater. Sci, vol.28, pp.3997-4002, 1993.
DOI : 10.1007/bf00351220

C. Chung and V. Le, « Depth of cut per abrasive in fixed diamond wire sawing, Int. J. Adv. Manuf. Technol, vol.80, pp.1337-1346, 2015.

N. Broll, « Caractérisation de solides cristallisés par diffraction X », Techniques de l'Ingénieur, 1996.

B. Pinheiro, Étude par diffraction des rayons X des modifications microstructurales en cours de fatigue, 2011.

N. Broll, « Caractérisation de solides cristallisés par diffraction X », Techniques de l'ingénieur, 1996.

T. Ungár, « Dislocation densities, arrangements and character from X-ray diffraction experiments, Mater. Sci. Eng. A, vol.309, issue.310, pp.14-22, 2001.

S. Wright, M. Nowell, and D. Field, A Review of Strain Analysis Using Electron Backscatter Diffraction, vol.17, 2011.

M. J. Hill and D. J. Rowcliffe, « Deformation of silicon at low temperatures, J. Mater. Sci, vol.9, issue.10, pp.1569-1576, 1974.

J. Yan, H. Takahashi, X. Gai, H. Harada, J. Tamaki et al., « Load effects on the phase transformation of single-crystal silicon during nanoindentation tests, Mater. Sci. Eng. A, vol.423, issue.2, pp.19-23, 2006.

T. Shibata, A. Ono, K. Kurihara, E. Makino, and M. Ikeda, « Cross-section transmission electron microscope observations of diamond-turned single-crystal Si surfaces, Appl. Phys. Lett, vol.65, pp.2553-2555, 1994.

H. Seigneur, E. J. Schneller, N. S. Shiradkar, and W. V. Schoenfeld, Effect of Diamond Wire Saw Marks on Solar Cell Performance, Energy Procedia, vol.92, pp.386-391, 2016.

S. Würzner, M. Herms, T. Kaden, H. J. Möller, and M. Wagner, Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry », Energies, vol.10, 2017.

J. Schmidt, B. Veith, F. Werner, D. Zielke, and R. Brendel, Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks, 2010.

C. Barbos, Characterization of Al2O3 Thin Films Prepared by Thermal ALD », Energy Procedia, vol.77, pp.558-564, 2015.
DOI : 10.1016/j.egypro.2015.07.080
URL : https://doi.org/10.1016/j.egypro.2015.07.080

H. C. Sio, « The influence of crystal orientation on surface passivation in multicrystalline silicon, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), pp.1770-1775, 2013.

L. E. Black, T. C. Kho, K. R. Mcintosh, and A. Cuevas, The Influence of Orientation and Morphology on the Passivation of Crystalline Silicon Surfaces by Al2O3 », Energy Procedia, vol.55, pp.750-756, 2014.

S. C. Vitkavage, E. A. Irene, and H. Z. Massoud, « An investigation of Si-SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon », J. Appl. Phys, vol.68, issue.10, pp.5262-5272, 1990.

D. K. Schroder, Recombination Lifetimes in Silicon », in Recomb. Lifetime Meas. SiliconSTP1340, 1998.
DOI : 10.1520/stp15690s

A. Cuevas, M. Stocks, D. Mcdonald, M. Kerr, and C. Samundsett, « Recombination and trapping in multicrystalline silicon, IEEE Trans. Electron Devices, vol.46, issue.10, pp.2026-2034, 1999.
DOI : 10.1109/16.791992

T. Vladimirov-arguirov, « Electro-optical properties of dislocations in silicon and their possible application for light emitters, 2008.

D. Paehler, D. Schneider, and M. Herben, Nondestructive characterization of sub-surface damage in rotational ground silicon wafers by laser acoustics, Microelectronic Engineering, vol.84, pp.340-354, 2007.

R. Riva, Résultats internes CEA non publiés, 2016.