Skip to Main content Skip to Navigation
Theses

Étude et mise en œuvre de nouveaux transistors GaN bidirectionnels au sein de structures d'électronique de puissance à hautes performances

Abstract : CEA-Leti offers bidirectional current-voltage transistors based on the HEMT GaN technology recently applied to the power switch design. The 4-segment bidirectional feature opens new perspectives in terms of power electronics structures and leads to explore the topologies that require this type of switches, allowing to design single-stage AC-DC or AC-AC conversion systems. These structures, which then require fewer switches, offer potential benefits in terms of compactness and efficiency. The 4-segment CEA Leti switch has the particularity of being single-gate type, which allows to control one bidirectional switch with just one control signal. On the other hand, this specificity leads to avoid classical control strategies and to explore new modes of control: in this context, this thesis work was interested in automatic switching strategies applied to the single gate bidirectional switch. A specific "switch frame" has been defined as a preliminary condition for the definition of any topology implementing this type of switch in order to implement ZCS or ZVS self-switching strategies. On this basis, two topologies, one ZCS, the other ZVS, were studied in the context of an AC/DC conversion with PFC function and power reversibility. The ZVS switching topology has been selected for experimental implementation. In this perspective, a specific ZVS auto-switching driver circuit has been designed. The converter operation, in ZVS auto-switching, is validated by tests on a prototype in AC/DC conversion mode.
Document type :
Theses
Complete list of metadatas

https://tel.archives-ouvertes.fr/tel-01888721
Contributor : Abes Star :  Contact
Submitted on : Friday, October 5, 2018 - 12:02:06 PM
Last modification on : Wednesday, October 14, 2020 - 4:18:49 AM
Long-term archiving on: : Sunday, January 6, 2019 - 2:42:39 PM

File

STERNA_2018_diffusion.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-01888721, version 1

Collections

Citation

Léo Sterna. Étude et mise en œuvre de nouveaux transistors GaN bidirectionnels au sein de structures d'électronique de puissance à hautes performances. Energie électrique. Université Grenoble Alpes, 2018. Français. ⟨NNT : 2018GREAT037⟩. ⟨tel-01888721⟩

Share

Metrics

Record views

277

Files downloads

2007