Y. Avestisyan, C. Zhang, I. Kawayama, H. Murakami, T. Somekawa et al., Terahertz generation by optical rectification in lithium niobate crystal using a shadow mask, Optics Express, vol.20, issue.23, pp.25752-25757, 2012.

J. Barros, Optimisation de la source synchrotron cohérente dans le domaine des Térahertz pour la spectroscopie à haute résolution de molécules d, 2010.

J. W. Beeman and E. E. Haller, GeGa photoconductor arrays : Design considerations and quantitative analysis of prototype single pixels, Infrared Physics & Technology, vol.35, issue.7, pp.827-836, 1994.

A. Bergner, U. Heugen, E. Bründermann, G. Schwaab, M. Havenith et al., New p-Ge THz laser spectrometer for the study of solutions : THz absorption spectroscopy of water, Review of Scientific Instruments, vol.76, issue.6, p.63110, 2005.

R. W. Boyd, Nonlinear Optics, p.17, 2003.

E. R. Brown, A photoconductive model for superior GaAs THz photomixers, Applied Physics Letters, vol.75, issue.6, pp.769-771, 1999.

E. Bründermann, D. R. Chamberlin, and E. E. Haller, Novel design concepts of widely tunable germanium terahertz lasers, Infrared Physics & Technology, vol.40, issue.3, pp.141-151, 1999.

E. Castro-camus and M. Alfaro, Photoconductive devices for terahertz pulsed spectroscopy : a review, Photonics Research, vol.4, issue.3, pp.36-42, 2016.

G. Chattopadhyay, Technology, Capabilities, and Performance of Low Power Terahertz Sources, IEEE Transactions on Terahertz Science and Technology, vol.1, issue.1, p.19, 2011.

J. Coutaz, L. Chusseau, J. Demaison, and C. , Optoélectronique térahertz. EDP Sciences, p.22, 2008.

J. M. Delord, J. F. Roux, J. L. Coutaz, C. Canseliet, A. Krotkus et al., Sampling of RF signals with LTG-GaAs based MSM structures, 2007.

A. Beck, Réalisation et caractérisation de photodiodes à transport unipolaire pour la génération d'ondes térahertz, vol.1, 0121.

J. Brouckaert, G. Roelkens, D. Van-thourhout, and R. Baets, Compact InAlAs-InGaAs Metal-Semiconductor-Metal Photodetectors Integrated on Silicon-on-Insulator Waveguides, IEEE Photonics Technology Letters, vol.19, issue.19, pp.1484-1486, 2007.

M. Casalino, L. Sirleto, L. Moretti, and I. Rendina, A silicon compatible resonant cavity enhanced photodetector working at 1.55 micrometer. Semiconductor Science and Technology, vol.23, p.75001, 2008.

J. Chen, D. Kim, and M. B. Das, Transit-time limited high-frequency response characteristics of MSM photodetectors, IEEE Transactions on Electron Devices, vol.43, issue.11, pp.1838-1843, 1996.

S. Collin, Nanostructure arrays in free-space : Optical properties and applications, Reports on Progress in Physics, vol.77, issue.12, p.126402, 2014.

T. W. Ebbesen, H. J. Lezec, H. F. Ghaemi, T. Thio, and P. A. Wolff, Extraordinary optical transmission through sub-wavelength hole arrays, Nature, vol.391, issue.6668, pp.667-669, 1998.

H. Erlig, S. Wang, T. Azfar, A. Udupa, H. Fetterman et al., LT-GaAs detector with 451 fs response at 1.55 µm via two-photon absorption, Electronics Letters, vol.35, issue.2, pp.173-174, 1999.

J. Farhoomand and R. E. Mcmurray, Design parameters of a resonant infrared photoconductor with unity quantum efficiency, Applied Physics Letters, vol.58, issue.6, p.92, 1991.

F. J. Garcia-vidal and L. Martin-moreno, Transmission and focusing of light in onedimensional periodically nanostructured metals, Physical Review B, vol.66, issue.15, p.155412, 2002.

F. J. Garcia-vidal, L. Martin-moreno, T. W. Ebbesen, and L. Kuipers, Light passing through subwavelength apertures, Reviews of Modern Physics, vol.82, issue.1, p.105, 2010.

, Chapitre 3. Photodétecteurs en cavités résonantes

S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou et al., Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures, Applied Physics Letters, vol.59, issue.25, pp.3276-3278, 1991.

Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu et al., 1.55 micrometer GaInNAs resonant-cavity-enhanced photodetector grown on GaAs, Applied Physics Letters, vol.87, issue.11, p.111105, 2005.
URL : https://hal.archives-ouvertes.fr/in2p3-00148681

E. S. Harmon, M. R. Melloch, J. M. Woodall, D. D. Nolte, N. Otsuka et al., Carrier lifetime versus anneal in low temperature growth GaAs, Applied Physics Letters, vol.63, issue.16, pp.2248-2250, 1993.

J. J. Hench and Z. Strako?, The RCWA method-A case study with open questions and perspectives of algebraic computations. ETNA. Electronic Transactions on Numerical Analysis, vol.31, pp.331-357, 2008.

T. Ishibashi, S. Kodama, N. Shimizu, and T. Furuta, High-Speed Response of UniTraveling-Carrier Photodiodes, Japanese Journal of Applied Physics, vol.36, issue.10R, p.6263, 1997.

A. Jooshesh, V. Bahrami-yekta, J. Zhang, T. Tiedje, T. E. Darcie et al., PlasmonEnhanced below Bandgap Photoconductive Terahertz Generation and Detection, Nano Letters, vol.15, issue.12, pp.8306-8310, 2015.

A. Jooshesh, T. E. Darcie, and R. Gordon, Superior Terahertz Generation using PlasmonEnhanced Sub-bandgap Photoconductive Antenna, Conference on Lasers and Electro-Optics, 2017.

I. Kimukin, E. Ozbay, N. Biyikli, T. Kartaloglu, O. Aytür et al., High-speed GaAs-based resonant-cavity-enhanced 1.3 micrometer photodetector, Applied Physics Letters, vol.77, issue.24, pp.3890-3892, 2000.

H. Kocer, S. Butun, Z. Li, and K. Aydin, Reduced near-infrared absorption using ultrathin lossy metals in Fabry-Perot cavities, Scientific Reports, vol.5, 2015.

D. Kuhl, E. Bottcher, F. Hieronyani, E. Droge, and D. Bimberg, Inductive bandwidth enhancement of sub-micro meter InAlAs-InGaAs MSM photodetectors, Références Technology Letters, vol.7, issue.4, pp.421-423, 1995.

P. Latzel, High efficiency THz photomixers based on indium metallic wafer bonding, 0121.

P. Latzel, F. Pavanello, M. Billet, S. Bretin, A. Beck et al., Generation of mW Level in the 300-GHz Band Using Resonant-Cavity-Enhanced Unitraveling Carrier Photodiodes

, IEEE Transactions on Terahertz Science and Technology, issue.99, pp.1-8, 2017.

P. Latzel, F. Pavanello, S. Bretin, M. Billet, E. Peytavit et al., High efficiency UTC photodiodes as photonic emitters for 300 GHz high spectral efficiency wireless communications, 2017 11th European Conference on Antennas and Propagation (EUCAP), pp.1639-1641, 2017.

J. Lecourt, Etude et réalisation de lasers à fibre auto-impulsionnels à base d'absorbants saturables. phdthesis, p.90, 2006.

J. W. Lee, H. Shichijo, H. L. Tsai, and R. J. Matyi, Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates, Applied Physics Letters, vol.50, issue.1, pp.31-33, 1987.

Z. Liliental-weber, H. J. Cheng, S. Gupta, J. Whitaker, K. Nichols et al., Structure and carrier lifetime in LT-GaAs, Journal of Electronic Materials, vol.22, issue.12, pp.1465-1469, 1993.

D. C. Look, Molecular beam epitaxial GaAs grown at low temperatures, Thin Solid Films, vol.231, issue.1-2, pp.61-73, 1993.

H. N?mec, A. Pashkin, P. Ku?el, M. Khazan, S. Schnüll et al., Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy, Journal of Applied Physics, vol.90, issue.3, pp.1303-1306, 2001.

F. Pavanello, Uni-travelling carrier photodiodes and metal mesh filters based on subwavelength apertures for THz applications, p.121, 2013.

E. Peytavit, C. Coinon, and J. F. Lampin, A metal-metal Fabry-Perot cavity photoconductor for efficient GaAs terahertz photomixers, Journal of Applied Physics, vol.109, issue.1, pp.16101-016101, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00572645

. , 130 4.1.1 Photodétecteurs intégrés à des guides d'ondes

.. .. La-technique-du-report, 2.1 Dépôts métalliques pour la réalisation de photodétecteurs

. .. La-lithographie-Électronique, 140 4.3.1 Présentation de la technique de lithographie électronique

.. .. Gravures-physico-chimiques,

. .. Discussion,

. .. Références,

J. R. Arthur, Molecular beam epitaxy, Surface Science, vol.500, issue.1, pp.189-217, 2002.

H. A. Atwater, S. S. Wong, C. C. Ahn, S. Nikzad, and H. N. Frase, Analysis of monolayer films during molecular beam epitaxy by reflection electron energy loss spectroscopy. Surface Science, vol.298, pp.273-283, 1993.

J. W. Bae, C. H. Jeong, J. T. Lim, H. C. Lee, G. Y. Yeom et al., Anisotropic etching of InP and InGaAs by using an inductively coupled plasma in Cl2/N2 and Cl2/Ar mixtures at low bias power, Journal of the Korean Physical Society, vol.50, issue.4, pp.1130-1135, 2007.

D. M. Braun, Design of single layer antireflection coatings for InP/In 0.53 Ga 0.47 As/InP photodetectors for the 1200-1600-nm wavelength range, Applied Optics, vol.27, issue.10, pp.2006-2011, 1988.

S. Bulou, Synthèse de couches minces de SiCN par dépôt chimique en phase vapeur assisté par plasma micro-onde. Caractérisation du procédé et des films élaborés dans le mélange N2/Ar/CH4/H2/hexaméthyldisilazane. phdthesis, p.150, 2010.

P. Y. Chan, Indium Gallium Arsenide Three-State and NonVolatile Memory Quantum Dot Devices, p.133, 2014.

A. Y. Cho and J. R. Arthur, Molecular beam epitaxy, Progress in Solid State Chemistry, vol.10, pp.157-191, 1975.
URL : https://hal.archives-ouvertes.fr/hal-01492483

A. R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering : R : Reports, vol.31, issue.1, pp.1-438, 2001.

J. M. Delord, J. F. Roux, J. L. Coutaz, C. Canseliet, A. Krotkus et al., Sampling of RF signals with LTG-GaAs based MSM structures, European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, pp.1-1, 2007.

R. Garg, I. Bahl, and M. Bozzi, Microstrip Lines and Slotlines, 2013.

K. C. Gupta, Microstrip Lines and Slotlines. Artech House, 1996.

, Thèse de Maximilien Billet

K. Kosiel, J. Kubacka-traczyk, P. Karbownik, A. Szerling, J. Muszalski et al., Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures, Microelectronics Journal, vol.40, issue.3, pp.565-569, 2009.

P. Latzel, F. Pavanello, M. Billet, S. Bretin, A. Beck et al., Generation of mW Level in the 300-GHz Band Using Resonant-Cavity-Enhanced Unitraveling Carrier Photodiodes

, IEEE Transactions on Terahertz Science and Technology, issue.99, pp.1-8, 2017.

W. Lim, I. Baek, P. Jung, J. Lee, G. Cho et al., Dry Etching of GaAs in a Planar Inductively Coupled BCl3 Plasma, vol.13, pp.266-270, 2003.

X. Mellhaoui, Mécanismes physico-chimiques dans le procédé de gravure plasma du Silicium. phdthesis, 0147.

C. Nguyen, Radio-Frequency Integrated-Circuit Engineering, 2015.

K. Nojiri, Dry Etching Technology for Semiconductors, 2015.

R. F. Pease and S. Y. Chou, Lithography and Other Patterning Techniques for Future Electronics, Proceedings of the IEEE, vol.96, pp.248-270, 2008.

E. Peytavit, J. Lampin, F. Hindle, C. Yang, and G. Mouret, Wide-band continuous-wave terahertz source with a vertically integrated photomixer, Applied Physics Letters, vol.95, issue.16, p.161102, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00471952

E. Peytavit, S. Lepilliet, F. Hindle, C. Coinon, T. Akalin et al.,

. Lampin, Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor, Applied Physics Letters, vol.99, issue.22, pp.1077-3118, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00783534

E. Peytavit, F. Pavanello, G. Ducournau, and J. Lampin, Highly efficient terahertz detection by optical mixing in a GaAs photoconductor, Applied Physics Letters, vol.103, issue.20, pp.1077-3118, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00903765

E. Peytavit, M. Billet, Y. Desmet, G. Ducournau, D. Yarekha et al., THz photomixers based on nitrogen-ion-implanted GaAs, Journal of Applied Physics, vol.118, issue.18, p.183102, 2015.

E. Rouvalis, C. C. Renaud, D. G. Moodie, M. J. Robertson, and A. J. Seeds, Continuous Wave Terahertz Generation From Ultra-Fast InP-Based Photodiodes, IEEE Transactions on Microwave Theory and Techniques, vol.60, issue.3, pp.509-517, 2012.

C. Tripon-canseliet, M. Zegaoui, G. Jestin, C. Coinon, P. Berger et al., High dynamic range single channel sampling of wideband RF signals using ultra-fast nanoscale photoconductive switching, Electronics Letters, vol.52, issue.3, pp.237-239, 2016.

Z. Wang, Novel Light Source Integration Approaches for Silicon Photonics, Laser & Photonics Reviews, vol.11, issue.4, 2017.

B. S. Williams, Terahertz quantum-cascade lasers, Nature Photonics, vol.1, issue.9, pp.517-525, 2007.

. , 1.3 Mesure du temps de vie de l'AsGa-BT

). .. ,

. Sous-Échantillonnage-d'ondes-de-fréquences-sub-thz and . .. Thz,

. .. Photomélange, Génération d'ondes de fréquences sub-THz par

. .. Références,

G. P. , Nonlinear fiber optics, 2013.

R. W. Boyd, Nonlinear Optics, 2003.

J. M. Delord, J. F. Roux, J. L. Coutaz, and N. Breuil, Study of Optoelectronic Sampler Linearity for Analog-to-Digital Conversion of RF Signals, IEEE Photonics Technology Letters, vol.21, issue.19, p.191, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00991808

M. Deng, Contribution à la caractérisation et la modélisation jusque 325 GHz de transistors HBT des technologies, BiCMOS. Lille, vol.1, p.165, 2014.

L. Desplanque, Caractérisation électro-optique de composants térahertz par échantillonnage Franz-Keldysh subpicoseconde. phdthesis, 0167.

H. Erlig, S. Wang, T. Azfar, A. Udupa, H. Fetterman et al., LT-GaAs detector with 451 fs response at 1.55 µm via two-photon absorption, Electronics Letters, vol.35, issue.2, pp.173-174, 1999.

S. Formont, L. Ménager, G. Baily, L. Morvan, and D. Rousset, Direct sampling of Ka-Band signals using a photoconductive switch approach, 2011 International Topical Meeting on Microwave Photonics jointly held with the 2011 Asia-Pacific Microwave Photonics Conference, vol.189, p.191, 2011.

A. Jooshesh, T. E. Darcie, and R. Gordon, Superior Terahertz Generation using PlasmonEnhanced Sub-bandgap Photoconductive Antenna, Conference on Lasers and Electro-Optics, 2017.

T. Kataoka, K. Kajikawa, J. Kitagawa, Y. Kadoya, and Y. Takemura, Improved sensitivity of terahertz detection by GaAs photoconductive antennas excited at 1560 nm, Applied Physics Letters, vol.97, issue.20, 2010.

M. Lelek, Mise en forme temporelle et Spectrale pour une application à l'endomicroscopie bi-photonique. phdthesis, 0161.
URL : https://hal.archives-ouvertes.fr/tel-00141705

D. Mcmorrow, J. S. Melinger, A. R. Knudson, S. Buchner, K. Ikossi-anastasiou et al., Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique, IEEE Transactions on Nuclear Science, vol.44, issue.6, pp.2290-2297, 1997.

E. Peytavit, C. Coinon, and J. F. Lampin, A metal-metal Fabry-Perot cavity photoconductor for efficient GaAs terahertz photomixers, Journal of Applied Physics, vol.109, issue.1, p.171, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00572645

E. Peytavit, S. Formont, and J. F. Lampin, GaAs Fabry-Perot cavity photoconductors : switching with picojoule optical pulses, Electronics Letters, vol.49, issue.3, pp.207-208, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00796471

E. Rosencher and . Optoelectronics, , 2002.

J. Rämer, F. Ospald, G. V. Freymann, and R. Beigang, Generation and detection of terahertz radiation up to 4.5 THz by low-temperature grown GaAs photoconductive antennas excited at 1560 nm, Applied Physics Letters, vol.103, issue.2, p.21119, 2013.

J. Soole and H. Schumacher, Transit-time limited frequency response of InGaAs MSM photodetectors, IEEE Transactions on Electron Devices, vol.37, issue.11, p.197, 1990.

M. Tani, K. Lee, and X. Zhang, Detection of terahertz radiation with lowtemperature-grown GaAs-based photoconductive antenna using 1.55 µm probe, Physics Letters, vol.77, issue.9, p.177, 2000.

C. Tripon-canseliet, M. Zegaoui, G. Jestin, C. Coinon, P. Berger et al., High dynamic range single channel sampling of wideband RF signals using ultra-fast nanoscale Thèse de Maximilien Billet photoconductive switching, Electronics Letters, vol.52, issue.3, p.191, 2016.

R. Urata, L. Y. Nathawad, K. Ma, R. Takahashi, D. A. Miller et al., Ultrafast sampling using low temperature grown GaAs MSM switches integrated with CMOS amplifier for photonic A/D conversion, The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, vol.2, p.191, 2002.

M. Billet, Y. Desmet, F. Bavedila, S. Barbieri, W. Haensel et al., Billet and E. Peytavit. A simplified modal expansion formalism adapted to the optical design of resonant cavity enhanced photodetectors using metallic gratings, Communications scientifiques Publications dans des revues internationales, 2017.

E. Wallart, G. Peytavit, M. Ducournau, J. Zaknoune, ;. M. Lampin et al., Generation of mW-level in the 300 GHz band using resonant cavity enhanced uni-travelling carrier photodiodes, Communications dans des conférences internationales-M. Billet, 2015.

, Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination. International Conference on Infrared Millimeter and Terahertz Waves IRMMW-THz, 2017.

M. Billet, C. Coinon, G. Ducournau, X. Wallart, J. Lampin et al., Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications. International Conference on Infrared Millimeter and Terahertz Waves IRMMW-THz, 2017.