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Development of ultra fine pitch array INTERCONNECTION

Abstract : With the constant demand for reducing the feature size of transistors and that of the devices, which is guided by Moore’s law, 2D integration is no longer fit to adapt the growing demand. This has led to 3D integration of active devices with the help of Cu/Ni pillars capped with Sn based solder alloys. In the coming years, applications which demand high density interconnects (optoelectronic, microdisplays, IR-detectors, MEMS) will require an interconnect pitch of 10 µm and below. However, Cu/Ni/solder pillars have never been investigated in depth for such a small interconnection pitch. With reduction of interconnect dimension, the diameter of Cu/Ni pillar and solder alloy also reduces. Thus, it is feared that the intermetallic formation, which is the key phenomenon responsible for the bonding, may be problematic due to the reduction in size of Cu pillar capped with solder alloy.The thesis is dedicated to the metallurgical study and its characterization for very small interconnects (5 µm) at 10 µm pitch, where the main focus is given on the physio-chemical mechanisms of soldering between Sn-Ag solder alloy and Ni or Ni/Au layers. For the first time, the mechanism of solid-state interactions between Sn and Ni is studied in depth and also for the first time the Ni3Sn4 SLID (Solid-Liquid-lnterdiffusion) system as an interconnect has been investigated at these dimensions. Moreover, the mechanical and electrical properties as well as the thermal stability of these interconnects are studied. Interestingly, during the latter part of this study, Ni3Sn2 layer is observed during aging of the Ni/Ni3Sn4 system for low temperature (200°C).
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Submitted on : Wednesday, September 12, 2018 - 9:10:13 AM
Last modification on : Wednesday, October 14, 2020 - 4:19:42 AM


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Divya Taneja. Development of ultra fine pitch array INTERCONNECTION. Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2018. English. ⟨NNT : 2018GREAI037⟩. ⟨tel-01872367⟩



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