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Investigation of hybrid CBRAM/OXRAM non-volatile memories for low consumption and high reliability

Abstract : As Information Technologies (IT) are still growing, memory devices need to evolve to answer IT market demands. Nowadays, new technologies are emerging and are entering the market. Resistive Random Access Memory (RRAM) are part of these emerging devices and offer great advantages in terms of power consumption, performances, density and the possibility to be integrated in the back end of line. However, to be competitive, some roadblocks still have to be overcome especially regarding technology variability, reliability and thermal stability. Their place on memory market is then still undefined. Moreover, as RRAM working principle depends on stack materials and has to be observed at nanometer resolution, switching mechanism understanding is still challenging. This thesis proposes an analysis of oxide-based CBRAM microscopic working principle based on electrical characterization results and atomistic simulation. Then, an interdependence between RRAM electrical performances as well as material parameters is studied to point out new parameters that can be taken into account to target specific memory applications.
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Submitted on : Monday, August 27, 2018 - 11:48:05 AM
Last modification on : Thursday, June 11, 2020 - 5:04:07 PM
Long-term archiving on: : Wednesday, November 28, 2018 - 1:52:39 PM


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  • HAL Id : tel-01862319, version 1



Cécile Nail. Investigation of hybrid CBRAM/OXRAM non-volatile memories for low consumption and high reliability. Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2018. English. ⟨NNT : 2018GREAT010⟩. ⟨tel-01862319⟩



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