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In incorporation improvement in InGaN based active region using InGaN pseudo substrate for monolithic white LED application

Abstract : Light emitting diodes (LEDs) based on nitride materials are very efficient in the blue range. These blue LEDs combined with phosphors are used to manufacture white LEDs widely used in the lighting market. Nonetheless, this converted approach presents some disadvantages , like an instability of the color temperature or conversion losses. In this context, the white monolithic LED which produces the white color thanks to different emission wavelengths produced from quantum wells (QWs) placed in the active region is one of the considered solution.However, as emission wavelength increases the quantum efficiency of the InGaN based QWs decreases. This is problematic for the white monolithic application but also for micro-display application which both ideally requires red, green and blue monochromatic LEDs grown in the same material system. This issue is mainly due to the great lattice mismatch between the InGaN QW and the GaN layer on sapphire substrate which induces an important compressive strain. This strain is responsible for a strong internal electric field in the QWs, which is detrimental for the quantum efficiency, and for low indium incorporation rate in GaN, originally thermodynamically difficult.This PhD thesis proposes to tackle this issue by growing the LED on an InGaN pseudo-substrate called InGaNOS manufactured by Soitec.After identifying the limitations of InGaN based structures grown on regular GaN on sapphire substrate for efficient long wavelength emission, full InGaN structures were grown by MOCVD on InGaNOS substrates. It was shown that the strain was partially released and the indium incorporation was made easier. Through fine structural, optical and electrical characterizations, the different steps leading from the InGaN buffer regrowth stage to the complete processed LED were studied. PL emission wavelengths up to 617 nm were reached at room temperature. The optical performances of these MQW structures in the green, yellow and amber range were measured to be comparable to the best ones achieved in the literature. Finally, the growth of the first full InGaN LED structure on InGaN substrate revealed the remaining challenges that will require some additional developments.
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Submitted on : Wednesday, July 11, 2018 - 3:21:06 PM
Last modification on : Thursday, June 11, 2020 - 5:04:06 PM
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  • HAL Id : tel-01835620, version 1




Armelle Even. In incorporation improvement in InGaN based active region using InGaN pseudo substrate for monolithic white LED application. Optics [physics.optics]. Université Grenoble Alpes, 2018. English. ⟨NNT : 2018GREAY008⟩. ⟨tel-01835620⟩



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