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Développement d'une nouvelle technique d'analyse pour les nanosctructures gravées par plasmas : (S)TEM EDX quasi in-situ

Abstract : As the size of integrated circuit continues to shrink, plasma processes are more and more challenged and show limitations to etch nanometer size features in complex stacks of thin layers. The achievement of anisotropic etching relies on the formation of passivation layers on the sidewalls of the etched features, which act like a protective film that prevents lateral etching by the plasma radicals. However, this layer also generate a slope in the etch profile and it’s difficult to control its thickness. Another thin layer called “reactive layer” is also formed at the bottom of the features. Etch products are formed in this layer allowing a high etch rate of the substrate. It starts to be realized that controlling the thickness of this reactive layer is the key to achieve very high selective processes.However, the layers to be analyzed are chemically highly reactive because they contain large concentrations of halogens and they get immediately modified (oxidized) when exposed to ambient atmosphere.In this work we develop an original, simple and extremely powerful approach to observe passivation layers quasi in-situ (i.e. without air exposure): After plasma etching, the wafer is transported under vacuum inside an adapted suitcase to a deposition chamber where it is encapsulated by a metallic layer (magnetron sputtering PVD). Then, the encapsulated features can be observed ex situ without chemical / thickness modification thanks to (S)TEM-EDX analysis.
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Submitted on : Wednesday, May 23, 2018 - 12:10:07 PM
Last modification on : Tuesday, October 6, 2020 - 4:30:04 PM
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  • HAL Id : tel-01798252, version 1



Matthieu Serege. Développement d'une nouvelle technique d'analyse pour les nanosctructures gravées par plasmas : (S)TEM EDX quasi in-situ. Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2017. Français. ⟨NNT : 2017GREAT097⟩. ⟨tel-01798252⟩



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