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V. En-haut,-variation-de-i-d-en-fonction-de and V. Gs, En bas, logarithme de I D en fonction de V GS pour V DS = 1, 5 V (NMOS avec W = 150 nm et L = 130 nm), p.75

. En-haut and .. De-gauchè-a-droite, le gain en fonction de la tension d'entrée et la caractéristique entrée-sortie. En bas, de gauchè a droite : le courant généré par le transistor N 2 en fonction de la tension d'entrée et le bruit ramené en entrée en fonction de la fréquence, p.89

. En-haut and .. De-gauchè-a-droite, variation de la capacité de la diode en fonction de la tension aux bornes de celle-ci et variation du KTC noise en fonction de la tension aux bornes de la diode. En bas, variation du KTC noise en fonction de la température, p.96

=. Ref and ?. , Sign ) simulé pour N = 1023 et une précision du comparateur de 6 mV, p.130

=. Ref and ?. , Sign ) simulé (en bleu) pour N = 1023 et une précision du comparateur de 2, 5 mV et sa courbe de tendance (en rouge), p.135

=. Ref and ?. , Sign ) simulé (en bleu) pour N = 1023 et une précision du comparateur de 1, 4 mV et sa courbe de tendance (en rouge), p.136

=. Ref and ?. , Sign ) simulé (en bleu) et sa courbe de tendance (en rouge) pour N = 1023, p.138

.. Les-quatre-solutions-possibles-de-positionnement, 172 TABLE DES FIGURES 5.9 1 ` ere possibilité d'intégration, p.174

V. En-haut,-variation-de-i-d-en-fonction-de and V. Gs, En bas, logarithme de I D en fonction de V GS pour V DS = 1, 5 V (NMOS avec W = 10 µm et L = 130 nm), p.209

V. En-haut,-variation-de-i-d-en-fonction-de and V. Gs, En bas, logarithme de I D en fonction de V SG pour V SD = 1, 5 V (PMOS avec W = 150 nm et L = 130 nm), p.210

V. De-i-d-en-fonction-de and V. Sg, En bas, logarithme de I D en fonction de V SG pour V SD = 1, 5 V (PMOS avec W = 10 µm et L = 130 nm), p.211

V. Quelques-paramètres-physiques-de-la-technologie-avec, la tension de seuil, ? 0 : la permittivité diélectrique du vide, ? OX : la constante diélectrique du dioxyde de silicium, ? sat : la vitesse de saturation des porteurs, t ox : l'´ epaisseur de l'oxyde, C ox : la capacité surfacique de l'oxyde, I ON : le courantàcourantà l'´ etat passant et I OF F : le courantàcourantà l'´ etat bloqué, p.79