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Conception d’une nouvelle génération de redresseur Schottky de puissance en Nitrure de Gallium (GaN), étude, simulation et réalisation d’un démonstrateur

Abstract : There is increasing interest in the fabrication of power semiconductor devices in home automation applications. Power semiconductor technology has been essentially confined to Si. Recently, new materials with superior properties are being investigated as potential replacements, in particular silicon carbide (SiC) and gallium nitride (GaN). The current state of development of SiC technology is much more mature than for GaN. However, the use of 4H-SiC is not a cost effective solution for realizing a medium and high voltage Schottky diode. Recent advances on the development of thick n-type GaN epilayers on Si substrate offer new prospects for the development of a low-cost Schottky rectifiers for at least medium voltage range 600 V. In the context of our thesis, two types of GaN based rectifier architectures have been studied. The first one is a pseudo-vertical architecture proposed during previous G2ReC project. The second one has a lateral structure with AlGaN/GaN heterojunction, derived from a HEMT structure. The optimization of the Schottky rectifiers has been achieved by finite element simulations. As a first step, the models are implemented in the software and adjusted with the parameters described in the literature. The influence of the geometrical and physical parameters on the specific on-resistance and on the breakdown voltage has been analysed. Finally, the test devices have been realized and characterized to optimize and to validate the parameters of these models. These studies lead to identify the limits of the structures and create a new generation of powerful structures.
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Submitted on : Thursday, May 3, 2018 - 7:24:35 PM
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Amira Souguir-Aouani. Conception d’une nouvelle génération de redresseur Schottky de puissance en Nitrure de Gallium (GaN), étude, simulation et réalisation d’un démonstrateur. Electronique. Université de Lyon, 2016. Français. ⟨NNT : 2016LYSEI093⟩. ⟨tel-01784876⟩

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