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Theses

Conception, optimisation et caractérisation d’un transistor à effet de champ haute tension en Carbure de Silicium

Abstract : Silicon carbide (SiC) has higher critical electric field for breakdown and lower intrinsic carrier concentration than silicon, which are very attractive for high power and high temperature power electric applications. In this thesis, a new 3.3kV/20A SiC-4H JFET is designed and fabricated for motor drive (330kW). This breakdown voltage is beyond the state of art of the commercial unipolar SiC devices. The first characterization shows that the breakdown voltage is lower (2.5kV) than its theoretical value. Also the on-state resistance is more important than expected. By means of finite element simulation the origins of the failure are identified and then verified by optical analysis. Hence, a new layout is designed followed by a new generation of SiC-4H JFET is fabricated. Test results show the 3.3kV JFET is developed successfully. Meanwhile, the electro-thermal mechanism in the SiC JFETs under short circuit is studied by means of TCAD simulation. The commercial 1200V SIT (USCi) and LV-JFET (Infineon) are used as sample. A hotspot inside the structures is observed. And the impact the bulk thickness and the canal doping on the short circuit capability of the devices are shown. The physical models validated by this study will be used on our 3.3kV once it is packaged.
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Submitted on : Thursday, May 3, 2018 - 7:21:42 PM
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  • HAL Id : tel-01784870, version 1

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Shiqin Niu. Conception, optimisation et caractérisation d’un transistor à effet de champ haute tension en Carbure de Silicium. Electronique. Université de Lyon, 2016. Français. ⟨NNT : 2016LYSEI136⟩. ⟨tel-01784870⟩

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