Caractérisation et simulation de défauts induits par laser 1340 nm continu sur la technologie 28FDSOI en analyse de défaillance électrique

Abstract : Faced with the high density of integration of the transistors and the number of metallization level, fault localization in analysis is mainly done by the rear face of the component. This backside analysis requires the systematic use of solid immersion lenses and laser scanning microscopy to limit the stress of spatial resolution and sensitivity. The objectives are to determine the degradation induced by a continuous 1340 nm laser on the 28FDSOI technology and to provide a simulation tool for predicting the allowable dose by the transistors. The study begins with the reproduction and characterization of the laser-induced defect. The results mainly show a diffusion of grid-contact interconnections in NiPtSi. Based on these observations, a model of thermal laser stimulation is built and then tested on an elemental structure. The results show that the temperature can reach sufficiently high values to cause the diffusion of the silicide and to explain the observations. In the last part, the model is put to the test on real structures. The defect is characterized parametrically using frequency mapping. Simultaneously, the simulation is applied to these same structures faithfully. The results show a good ability of the model to predict the degradation threshold of the transistors under laser thermal stimulation.
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https://tel.archives-ouvertes.fr/tel-01783955
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Submitted on : Wednesday, May 2, 2018 - 6:42:06 PM
Last modification on : Thursday, May 3, 2018 - 1:28:55 AM
Long-term archiving on : Monday, September 24, 2018 - 9:02:28 PM

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Maxime Penzes. Caractérisation et simulation de défauts induits par laser 1340 nm continu sur la technologie 28FDSOI en analyse de défaillance électrique. Autre. Université de Bordeaux, 2018. Français. ⟨NNT : 2018BORD0028⟩. ⟨tel-01783955⟩

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