Progress and prospects of group-III nitride semiconductors, Progress in Quantum Electronics, vol.20, issue.5-6, p.361, 1996. ,
DOI : 10.1016/S0079-6727(96)00002-X
Large???band???gap SiC, III???V nitride, and II???VI ZnSe???based semiconductor device technologies, Journal of Applied Physics, vol.63, issue.5, p.1363, 1994. ,
DOI : 10.1063/1.110180
GaN, AlN, and InN: A review, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.10, issue.4, p.1237, 1992. ,
DOI : 10.1116/1.585897
Growth and applications of Group III-nitrides, Journal of Physics D: Applied Physics, vol.31, issue.20, p.2653, 1998. ,
DOI : 10.1088/0022-3727/31/20/001
GaN: Processing, defects, and devices, Journal of Applied Physics, vol.83, issue.1, p.1, 1999. ,
DOI : 10.1063/1.118838
Nitrogen Compounds of Gallium. I, II, The Journal of Physical Chemistry, vol.36, issue.10, p.2588, 1932. ,
DOI : 10.1021/j150340a006
THE PREPARATION AND PROPERTIES OF VAPOR???DEPOSITED SINGLE???CRYSTAL???LINE GaN, Applied Physics Letters, vol.12, issue.10, p.327, 1969. ,
DOI : 10.1149/1.2424100
The Use of Metalorganics in the Preparation of Semiconductor Materials, Journal of The Electrochemical Society, vol.118, issue.11, p.1864, 1971. ,
DOI : 10.1149/1.2407853
Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation, Applied Physics Letters, vol.16, issue.8, p.461, 1975. ,
DOI : 10.1063/1.1655132
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI), Japanese Journal of Applied Physics, vol.28, issue.Part 2, No. 12, p.2112, 1989. ,
DOI : 10.1143/JJAP.28.L2112
Thermal Annealing Effects on P-Type Mg-Doped GaN Films, Japanese Journal of Applied Physics, vol.31, issue.Part 2, No. 2B, p.139, 1992. ,
DOI : 10.1143/JJAP.31.L139
High???power InGaN/GaN double???heterostructure violet light emitting diodes, Applied Physics Letters, vol.32, issue.19, p.2390, 1993. ,
DOI : 10.1143/JJAP.31.1258
The blue laser diode, 1997. ,
Progress and prospects of group-III nitride semiconductors, Progress in Quantum Electronics, vol.20, issue.5-6, p.361, 1996. ,
DOI : 10.1016/S0079-6727(96)00002-X
III???nitrides: Growth, characterization, and properties, Journal of Applied Physics, vol.37, issue.3, p.965, 2000. ,
DOI : 10.1557/PROC-423-23
Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel, Journal of Electronic Materials, vol.5, issue.14, p.359, 1973. ,
DOI : 10.1007/BF02811586
Semiconductor ultraviolet detectors, Journal of Applied Physics, vol.129, issue.10, p.7433, 1996. ,
DOI : 10.1063/1.114738
AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs, Electronics Letters, vol.31, issue.1, pp.68-88, 1995. ,
DOI : 10.1049/el:19950020
Candela???class high???brightness InGaN/AlGaN double???heterostructure blue???light???emitting diodes, Applied Physics Letters, vol.32, issue.13, p.1687, 1994. ,
DOI : 10.1143/JJAP.32.L338
Candela???class high???brightness InGaN/AlGaN double???heterostructure blue???light???emitting diodes, Applied Physics Letters, vol.32, issue.13, p.1687, 1994. ,
DOI : 10.1143/JJAP.32.L338
Nitride-based semiconductors for blue and green light-emitting devices, Nature, vol.386, issue.6623, p.351, 1997. ,
DOI : 10.1038/386351a0
Superior radiation resistance of In1???xGaxN alloys: Full-solar-spectrum photovoltaic material system, Journal of Applied Physics, vol.94, issue.10, p.6477, 2003. ,
DOI : 10.1016/0039-6028(83)90550-2
Design and characterization of GaN???InGaN solar cells, Applied Physics Letters, vol.91, issue.13, p.132117, 2007. ,
DOI : 10.1063/1.111573
Emission Mecha-nisms of LEDs and LDs, The blue laser diode, p.279, 2000. ,
When group-III nitrides go infrared: New properties and perspectives, Journal of Applied Physics, vol.12, issue.1, p.11101, 2009. ,
DOI : 10.1201/9781420078107
Candela???class high???brightness InGaN/AlGaN double???heterostructure blue???light???emitting diodes, Applied Physics Letters, vol.32, issue.13, p.1687, 1994. ,
DOI : 10.1143/JJAP.32.L338
Nitride-based semiconductors for blue and green light-emitting devices, Nature, vol.386, issue.6623, p.351, 1997. ,
DOI : 10.1038/386351a0
Design and characterization of GaN???InGaN solar cells, Applied Physics Letters, vol.91, issue.13, p.132117, 2007. ,
DOI : 10.1063/1.111573
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition, Applied Physics Letters, vol.395, issue.9, p.1089, 1997. ,
DOI : 10.1063/1.350642
Growth of high purity AlN crystals, Journal of Crystal Growth, vol.34, issue.2, p.263, 1976. ,
DOI : 10.1016/0022-0248(76)90139-1
Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors, Journal of Applied Physics, vol.50, issue.6, pp.3398-3419, 1999. ,
DOI : 10.1109/T-SU.1985.31647
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates, IEEE Electron Device Letters, vol.20, issue.4, p.161, 1999. ,
DOI : 10.1109/55.753753
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN, Journal of Applied Physics, vol.137, issue.4, p.1649, 1997. ,
DOI : 10.1063/1.119021
Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure, Journal of Applied Physics, vol.244, issue.2, p.1033, 1995. ,
DOI : 10.1103/PhysRevB.7.743
Beyond SiC! III-V Nitride Based Heterostuctures and Devices, SiC Materials and Devices Willardson and Beer Series, pp.307-394, 1998. ,
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates, IEEE Electron Device Letters, vol.19, issue.2, p.54, 1998. ,
DOI : 10.1109/55.658603
AlGaN/GaN HEMTs grown on SiC substrates, Electronics Letters, vol.33, issue.3, p.242, 1997. ,
DOI : 10.1049/el:19970122
Zinc-blende???wurtzite polytypism in semiconductors, Physical Review B, vol.36, issue.16, p.10086, 1992. ,
DOI : 10.1103/PhysRevB.36.1032
Large???band???gap SiC, III???V nitride, and II???VI ZnSe???based semiconductor device technologies, Journal of Applied Physics, vol.63, issue.5, p.1363, 1994. ,
DOI : 10.1063/1.110180
III???nitrides: Growth, characterization, and properties, Journal of Applied Physics, vol.37, issue.3, p.965, 2000. ,
DOI : 10.1557/PROC-423-23
Progress and prospects of group-III nitride semiconductors, Progress in Quantum Electronics, vol.20, issue.5-6, p.361, 1996. ,
DOI : 10.1016/S0079-6727(96)00002-X
Substrates for gallium nitride epitaxy, Materials Science and Engineering: R: Reports, vol.37, issue.3, p.61, 2002. ,
DOI : 10.1016/S0927-796X(02)00008-6
Physics and applications, 1998. ,
Influence of polarity on GaN thermal stability, Journal of Crystal Growth, vol.274, issue.1-2, p.38, 2005. ,
DOI : 10.1016/j.jcrysgro.2004.09.091
Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals, Applied Physics Letters, vol.193, issue.5, p.668, 1998. ,
DOI : 10.1557/S1092578300001770
Growth and applications of Group III-nitrides, Journal of Physics D: Applied Physics, vol.31, issue.20, p.2653, 1998. ,
DOI : 10.1088/0022-3727/31/20/001
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence, Applied Physics Letters, vol.118, issue.18, p.2691, 2001. ,
DOI : 10.1557/PROC-482-453
Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques, Applied Physics Letters, vol.69, issue.6, p.770, 1996. ,
DOI : 10.1063/1.117886
D thesis on " Characterization of A-plane Grown GaN on Sapphire Substrates by Electron Microscopy, 2009. ,
Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds, Journal of Applied Physics, vol.22, issue.9, p.3800, 1970. ,
DOI : 10.1016/S0081-1947(08)60031-4
When group-III nitrides go infrared: New properties and perspectives, Journal of Applied Physics, vol.12, issue.1, p.11101, 2009. ,
DOI : 10.1201/9781420078107
The Blue Laser Diode, 1997. ,
D thesis on " A novel solid state general illumination source, Georgia Institute of Technology, 2006. ,
Candela???class high???brightness InGaN/AlGaN double???heterostructure blue???light???emitting diodes, Applied Physics Letters, vol.32, issue.13, p.1687, 1994. ,
DOI : 10.1143/JJAP.32.L338
Molecular beam epitaxy, Progress in Solid State Chemistry, vol.10, p.157, 1975. ,
DOI : 10.1016/0079-6786(75)90005-9
URL : https://hal.archives-ouvertes.fr/hal-01492483
Molecular Beam Epitaxy: Fundamentals and Current Status, 1996. ,
Characterization and analysis of quantum-dot PV solar-cells, 2016. ,
The Chemical Structure of a Molecule Resolved by Atomic Force Microscopy, Science, vol.27, issue.15, p.1110, 2009. ,
DOI : 10.1002/jcc.20495
AFM and combined optical techniques, Materials Today, vol.12, issue.7-8, p.40, 2009. ,
DOI : 10.1016/S1369-7021(09)70201-9
URL : https://doi.org/10.1016/s1369-7021(09)70201-9
Transmission Electron Microscopy: A Textbook for Materials Science, 2009. ,
Transmission Electron Microscopy and diffractometry of material, 2009. ,
Candela???class high???brightness InGaN/AlGaN double???heterostructure blue???light???emitting diodes, Applied Physics Letters, vol.32, issue.13, p.1687, 1994. ,
DOI : 10.1143/JJAP.32.L338
Nitride-based semiconductors for blue and green light-emitting devices, Nature, vol.386, issue.6623, p.351, 1997. ,
DOI : 10.1038/386351a0
Superior radiation resistance of In1???xGaxN alloys: Full-solar-spectrum photovoltaic material system, Journal of Applied Physics, vol.94, issue.10, p.6477, 2003. ,
DOI : 10.1016/0039-6028(83)90550-2
Design and characterization of GaN???InGaN solar cells, Applied Physics Letters, vol.91, issue.13, p.132117, 2007. ,
DOI : 10.1063/1.111573
Emission Mecha-nisms of LEDs and LDs, The blue laser diode, p.279, 2000. ,
Solid phase immiscibility in GaInN, Applied Physics Letters, vol.69, issue.18, p.2701, 1996. ,
DOI : 10.1063/1.117683
Statistical model of ternary group-III nitrides, Physical Review B, vol.10, issue.23, p.235203, 2004. ,
DOI : 10.1063/1.1366651
Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model, Journal of Applied Physics, vol.8, issue.5, p.2358, 2001. ,
DOI : 10.1103/PhysRevLett.49.1412
Calculation of unstable mixing region in wurtzite In1???x???yGaxAlyN, Applied Physics Letters, vol.20, issue.1, p.105, 1997. ,
DOI : 10.1103/PhysRevLett.20.550
Chemical ordering in wurtzite InxGa1???xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy, Applied Physics Letters, vol.146, issue.14, p.1742, 1998. ,
DOI : 10.1063/1.117683
layers:???A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study, Physical Review B, vol.14, issue.163, p.205311, 2001. ,
DOI : 10.1017/S0885715600010630
Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells, Applied Physics Letters, vol.82, issue.26, p.4702, 2003. ,
DOI : 10.1063/1.1418453
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy, Journal of Applied Physics, vol.5, issue.3, p.1389, 1998. ,
DOI : 10.1063/1.100201
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition, Applied Physics Letters, vol.395, issue.9, p.1089, 1997. ,
DOI : 10.1063/1.350642
Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots, Applied Physics Letters, vol.79, issue.5, p.599, 2001. ,
DOI : 10.1016/0031-8914(67)90062-6
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm, Applied Physics Letters, vol.33, issue.8, p.981, 1997. ,
DOI : 10.1063/1.117683
Origin of Luminescence from InGaN Diodes, Physical Review Letters, vol.57, issue.1, p.237, 1999. ,
DOI : 10.1063/1.103561
Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers, Journal of Applied Physics, vol.60, issue.11, p.8979, 2002. ,
DOI : 10.1023/A:1010969000869
Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys, Applied Physics Letters, vol.5, issue.16, p.161901, 2010. ,
DOI : 10.1016/0001-6160(61)90242-5
Growth and characterization of AlInGaN quaternary alloys, Applied Physics Letters, vol.7, issue.1, p.40, 1996. ,
DOI : 10.1063/1.116749
Slip systems and misfit dislocations in InGaN epilayers, Applied Physics Letters, vol.83, issue.25, p.5187, 2003. ,
DOI : 10.1002/1521-3951(200111)228:1<41::AID-PSSB41>3.0.CO;2-N
Structure and formation mechanism of V defects in multiple InGaN???GaN quantum well layers, Journal of Applied Physics, vol.99, issue.7, p.73505, 2006. ,
DOI : 10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO;2-I
Variation in misfit dislocation behavior as a function of strain in the GeSi/Si system, Applied Physics Letters, vol.54, issue.10, p.925, 1989. ,
DOI : 10.1063/1.99055
As/GaAs(100) system, Applied Physics Letters, vol.160, issue.11, p.1327, 1992. ,
DOI : 10.1063/1.349440
Modeling of InGaN/Si tandem solar cells, Journal of Applied Physics, vol.11, issue.2, p.24507, 2008. ,
DOI : 10.1088/0022-3727/39/5/R01
Solid phase immiscibility in GaInN, Applied Physics Letters, vol.69, issue.18, p.2701, 1996. ,
DOI : 10.1063/1.117683
N Films Prepared by MOVPE, Japanese Journal of Applied Physics, vol.28, issue.Part 2, No. 8, p.1334, 1989. ,
DOI : 10.1143/JJAP.28.L1334
Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy, Applied Physics Letters, vol.28, issue.18, p.2251, 1991. ,
DOI : 10.1016/0038-1098(72)90474-7
Plastic strain relaxation of nitride heterostructures, Journal of Applied Physics, vol.64, issue.3, p.1127, 2004. ,
DOI : 10.1103/PhysRevB.61.7618
Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures, Applied Physics Letters, vol.108, issue.5, p.51901, 2016. ,
DOI : 10.1103/PhysRevLett.85.1902
Misfit dislocation formation in the AlGaN???GaN heterointerface, Journal of Applied Physics, vol.96, issue.12, p.7087, 2004. ,
DOI : 10.1016/0022-0248(74)90424-2
Slip systems and misfit dislocations in InGaN epilayers, Applied Physics Letters, vol.83, issue.25, p.5187, 2003. ,
DOI : 10.1002/1521-3951(200111)228:1<41::AID-PSSB41>3.0.CO;2-N
Role of surface step on misfit dislocation nucleation and critical thickness in semiconductor heterostructures, Materials Science and Engineering: B, vol.31, issue.3, p.299, 1995. ,
DOI : 10.1016/0921-5107(94)01146-X
Development of cross-hatch morphology during growth of lattice mismatched layers, Applied Physics Letters, vol.245, issue.23, p.3740, 2000. ,
DOI : 10.1063/1.114112
Generation and behavior of pure-edge threading misfit dislocations in InxGa1???xN???GaN multiple quantum wells, Journal of Applied Physics, vol.22, issue.9, p.5267, 2004. ,
DOI : 10.1016/S0022-0248(97)00081-X
/Si strained???layer heterostructures, Applied Physics Letters, vol.33, issue.3, p.322, 1985. ,
DOI : 10.1016/0040-6090(76)90085-7
New Approach in Equilibrium Theory for Strained Layer Relaxation, Physical Review Letters, vol.59, issue.20, p.2712, 1994. ,
DOI : 10.1063/1.106301
Critical thickness calculations for InGaN/GaN, Journal of Crystal Growth, vol.303, issue.1, p.314, 2007. ,
DOI : 10.1016/j.jcrysgro.2006.12.054
The critical thickness of InGaN on (0001)GaN, Journal of Crystal Growth, vol.310, issue.23, p.4913, 2008. ,
DOI : 10.1016/j.jcrysgro.2008.08.021
Atomic core structure of Lomer dislocation at GaAs/(001)Si interface, Philosophical Magazine A, vol.21, issue.1, p.85, 1995. ,
DOI : 10.1063/1.343380