Etude de procédés plasmas pour le retrait de résine implantée pour les filières CMOS et photonique

Abstract : Stripping photoresist after High Dose Implantation (HDI) is becoming a critical step with the increase of both implantation acceleration energy and dose. During this step, the photoresist is bombarded by the ions and a modified layer called “crust” is formed at the surface. This layer is difficult to remove with current processes and plasma chemistries without leaving residues and damaging the materials in presence. This study focuses first on the implanted photoresist characterization to understand the photoresist modifications induced by the implantation on the setting of robust experimental protocols. The major phenomenon observed is the resist crosslinking with a decrease of the oxygen and hydrogen content which results in an increase of photoresist density and hardness. Thanks to this understanding, the dry strip process using standard or alternative chemistries has been studied in terms of residues removal efficiency, impact on substrate and ashing rate. The oxidative chemistries allow to achieve the highest ashing but some SiO2 residues coming from substrate sputtering remain. On the contrary, the reductive chemistries are efficient to remove residues but the ashing rate is lower. Besides with such chemistries containing hydrogen, two phenomena are observed: photoresist popping and blistering in the silicon substrate. These issues are studied and solutions are proposed.
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Marion Croisy. Etude de procédés plasmas pour le retrait de résine implantée pour les filières CMOS et photonique. Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2017. Français. ⟨NNT : 2017GREAT090⟩. ⟨tel-01766464⟩

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