H. Okumura, Present Status and Future Prospect of Widegap Semiconductor High-Power Devices, Japanese Journal of Applied Physics, vol.45, issue.10A, p.7565, 2006.
DOI : 10.1143/JJAP.45.7565

M. Shur, R. Gaska, A. Khan, and G. Simin, Wide band gap electronic devices, Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611), pp.51-051, 2002.
DOI : 10.1109/ICCDCS.2002.1004074

B. Ozpineci and L. Tolbert, Comparison of wide-bandgap semiconductors for power electronics applications. United States, 2004.

U. K. Mishra, P. Parikh, and Y. Wu, AlGaN/GaN HEMTs-an overview of device operation and applications, Proceedings of the IEEE, vol.90, issue.6, pp.1022-1031, 2002.
DOI : 10.1109/JPROC.2002.1021567

G. Nitride, Gan systems, 2004.

E. Johnson, Physical limitations on frequency and power parameters of transistors, IRE International Convention Record, pp.27-34, 1958.
DOI : 10.1109/IRECON.1965.1147520

B. Baliga, Semiconductors for high???voltage, vertical channel field???effect transistors, Journal of Applied Physics, vol.10, issue.2, pp.1759-1764, 1982.
DOI : 10.1149/1.2425926

O. Ambacher, Growth and applications of Group III-nitrides, Journal of Physics D: Applied Physics, vol.31, issue.20, p.2653, 1998.
DOI : 10.1088/0022-3727/31/20/001

H. Morkoç, Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth, vol.1, 2009.

K. Ploog, O. Brandt, H. Yang, J. Menniger, and R. Klann, Interplay between growth kinetics and material quality of cubic GaN, Solid-State Electronics, vol.41, issue.2, pp.235-237, 1997.
DOI : 10.1016/S0038-1101(96)00200-6

H. Arabshahi and A. Mowlavi, STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION, Modern Physics Letters B, vol.83, issue.10, pp.1359-1366, 2009.
DOI : 10.1063/1.113294

M. Fujikane, A. Inoue, T. Yokogawa, S. Nagao, and R. Nowak, Mechanical properties characterization of c -plane (0001) and m -plane (10-10) GaN by nanoindentation examination, physica status solidi (c), vol.7, issue.7-8, pp.1798-1800, 2010.
DOI : 10.1002/pssc.200983641

M. Fujikane, T. Yokogawa, S. Nagao, and R. Nowak, Yield shear stress dependence on nanoindentation strain rate in bulk GaN crystal, physica status solidi (c), vol.8, issue.2, pp.429-431, 2011.
DOI : 10.1002/pssc.201000604

J. Serrano, A. Rubio, E. Hernández, A. Muñoz, and A. Mujica, Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures, Physical Review B, vol.47, issue.1, p.16612, 2000.
DOI : 10.1103/PhysRevB.47.4215

K. Jung, M. Cho, and M. Zhou, Structure and thermomechanical behavior of bent GaN nanowires, Computational Materials Science, vol.81, pp.524-529, 2014.
DOI : 10.1016/j.commatsci.2013.09.008

E. Caridi, T. Chang, K. Goossen, and L. Eastman, Direct demonstration of a misfit strain???generated electric field in a [111] growth axis zinc???blende heterostructure, Applied Physics Letters, vol.48, issue.7, pp.659-661, 1990.
DOI : 10.1063/1.101008

W. Chen and S. Hark, Strain???induced effects in (111)???oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates, Journal of Applied Physics, vol.77, issue.11, pp.5747-5750, 1995.
DOI : 10.1016/S0022-0248(74)80055-2

E. Yu, X. Dang, P. Asbeck, S. Lau, and G. Sullivan, Spontaneous and piezoelectric polarization effects in III???V nitride heterostructures, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.17, issue.4, pp.1742-1749, 1999.
DOI : 10.1116/1.590818

R. M. Martin, T. Li, R. Joshi, and C. Fazi, Piezoelectricity, Physical Review B, vol.42, issue.4, pp.1607-829, 1972.
DOI : 10.1103/RevModPhys.42.317

O. Ambacher, J. Smart, J. Shealy, N. Weimann, K. Chu et al., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, Journal of Applied Physics, vol.15, issue.6, pp.3222-3233, 1999.
DOI : 10.1063/1.366585

O. Ambacher, B. Foutz, J. Smart, J. Shealy, N. Weimann et al., Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, Journal of Applied Physics, vol.1, issue.1, pp.334-344, 2000.
DOI : 10.1557/PROC-449-1143

M. Halsall, P. Harmer, P. Parbrook, and S. Henley, Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN, Physical Review B, vol.69, issue.23, p.235207, 2004.
DOI : 10.1103/PhysRevB.44.4214

H. Xiao, F. Gao, L. M. Wang, X. T. Zu, Y. Zhang et al., Structural phase transitions in high-pressure wurtzite to rocksalt phase in GaN and SiC, Applied Physics Letters, vol.92, issue.24, p.241909, 2008.
DOI : 10.1103/PhysRevB.63.104103

Z. Dong and Y. Song, Abnormal pressure-induced structural transformations of gallium nitride nanowires, Applied Physics Letters, vol.96, issue.15, p.151903, 2010.
DOI : 10.1063/1.1145594

K. Jung, M. Cho, and M. Zhou, Thermal and mechanical response of [0001]-oriented GaN nanowires during tensile loading and unloading, Journal of Applied Physics, vol.112, issue.8, p.83522, 2012.
DOI : 10.1063/1.1616981

J. Wang, A. Kulkarni, K. Sarasamak, S. Limpijumnong, F. Ke et al., Molecular dynamics and density functional studies of a body-centered-tetragonal polymorph of ZnO, Physical Review B, vol.107, issue.17, p.172103, 2007.
DOI : 10.1063/1.2193794

Y. Yao and D. D. Klug, phase transition of GaN under isotropic and uniaxial compression, Physical Review B, vol.88, issue.1, p.14113, 2013.
DOI : 10.1103/PhysRevB.50.2715

G. V. Karas31-]-b, A. S. Jebalin, P. Rekh, D. Prajoon, N. M. Godwinraj et al., New Developments in Crystal Growth Research Unique model of polarization engineered algan/gan based hemts for high power applications, Superlattices and Microstructures, vol.78, pp.210-223, 2005.

F. Bernardini, V. Fiorentini, and D. Vanderbilt, Spontaneous polarization and piezoelectric constants of III-V nitrides, Physical Review B, vol.41, issue.16, p.10024, 1997.
DOI : 10.1109/58.265820

T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, As Heterojunctions, Japanese Journal of Applied Physics, vol.19, issue.5, p.225, 1980.
DOI : 10.1143/JJAP.19.L225

J. W. Orton, The story of semiconductors, 2004.
DOI : 10.1093/acprof:oso/9780199559107.001.0001

M. A. Khan, A. Bhattarai, J. Kuznia, and D. Olson, N heterojunction, Applied Physics Letters, vol.29, issue.9, pp.1214-1215, 1993.
DOI : 10.1063/1.106798

M. Micovic, A. Kurdoghlian, P. Janke, P. Hashimoto, D. W. Wong et al., AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.591-596, 2001.
DOI : 10.1109/16.906456

Y. Douvry, Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence: conception et fabrication, caractérisation et abilité, 2012.

M. P. For-solid-state and . Research, Oxide mbe system, 2003.

A. Curutchet, Etude du bruit aux basses fréquences dans les transistors à Haute Mobilité Electronique à base de Nitrure de Gallium, 2005.

N. Chaturvedi, Development and study of AlGaN/GaN microwave transistors for high power operation

B. J. Baliga, Gallium nitride devices for power electronic applications, Semiconductor Science and Technology, vol.28, issue.7, p.74011, 2013.
DOI : 10.1088/0268-1242/28/7/074011

U. K. Mishra, L. Shen, T. E. Kazior, and Y. Wu, GaN-Based RF Power Devices and Amplifiers, Proceedings of the IEEE, vol.96, issue.2, pp.287-305, 2008.
DOI : 10.1109/JPROC.2007.911060

D. Marti, S. Tirelli, A. R. Alt, J. Roberts, and C. Bolognesi, 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon, IEEE Electron Device Letters, vol.33, issue.10, pp.1372-1374, 2012.
DOI : 10.1109/LED.2012.2204855

S. Bentley, X. Li, D. Moran, and I. Thayne, Fabrication of 22nm T-gates for HEMT applications, Microelectronic Engineering, vol.85, issue.5-6, pp.1375-1378, 2008.
DOI : 10.1016/j.mee.2008.01.058

K. Shinohara, D. Regan, A. Corrion, D. Brown, Y. Tang et al., Self-aligned-gate gan-hemts with heavily-doped n+-gan ohmic contacts to 2deg, Electron Devices Meeting (IEDM), 2012 IEEE International, pp.27-29, 2012.

Y. Tang, K. Shinohara, D. Regan, A. Corrion, D. Brown et al., Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz, IEEE Electron Device Letters, vol.36, issue.6, pp.549-551, 2015.
DOI : 10.1109/LED.2015.2421311

D. S. Lee, J. W. Chung, H. Wang, X. Gao, S. Guo et al., 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment, IEEE Electron Device Letters, vol.32, issue.6, pp.755-757, 2011.
DOI : 10.1109/LED.2011.2132751

A. Mazzanti, G. Verzellesi, C. Canali, G. Meneghesso, and E. Zanoni, Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs, IEEE Electron Device Letters, vol.23, issue.7, pp.383-385, 2002.
DOI : 10.1109/LED.2002.1015205

G. Meneghesso, F. Zanon, M. J. Uren, and E. Zanoni, Anomalous Kink Effect in GaN High Electron Mobility Transistors, IEEE Electron Device Letters, vol.30, issue.2, pp.100-102, 2009.
DOI : 10.1109/LED.2008.2010067

. Peide, 0.2-um algan/gan high electron-mobility transistors with atomic layer deposition al2o3 passivation, IEEE Electron Device Letters, vol.34, issue.6, pp.744-746, 2013.

T. Kawanago, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii et al., Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT, IEEE Transactions on Electron Devices, vol.61, issue.3, pp.785-792, 2014.
DOI : 10.1109/TED.2014.2299556

M. Gassoumi, J. Bluet, C. Gaquière, G. Guillot, and H. Maaref, Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate, Microelectronics Journal, vol.40, issue.8, pp.1161-1165, 2009.
DOI : 10.1016/j.mejo.2007.02.005
URL : https://hal.archives-ouvertes.fr/hal-00473430

M. Faqir, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo et al., Characterization and analysis of trap-related eeects in algan? gan hemts Microelectronics reliability, pp.1639-1642, 2007.

X. Wang, X. Kang, J. Zhang, K. Wei, S. Huang et al., Investigation of current collapse mechanism of lpcvd si 3 n 4 passivated algan/gan hemts by fast so-switched currentdlts and cc-dltfs, Power Semiconductor Devices and IC's (ISPSD), 2017 29th International Symposium on, pp.231-234, 2017.

X. Lu, K. Yu, H. Jiang, A. Zhang, and K. M. Lau, as Gate Dielectric, IEEE Transactions on Electron Devices, vol.64, issue.3, pp.824-831, 2017.
DOI : 10.1109/TED.2017.2654358

R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.560-566, 2001.
DOI : 10.1109/16.906451

A. Richter, Aluminum oxide for the surface passivation of high eeciency silicon solar cells: Technology and advanced characterization, 2015.

W. Saito, T. Nitta, Y. Kakiuchi, Y. Saito, K. Tsuda et al., Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage gan-hemts References Chapter

S. Kolluri, S. Keller, D. Brown, G. Gupta, S. Rajan et al., Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates, Journal of Applied Physics, vol.108, issue.7, p.74502, 2010.
DOI : 10.1063/1.2965483

M. Huque, S. Eliza, T. Rahman, H. Huq, and S. Islam, EEect of the aspect ratio in algan/gan hemt's dc and small signal parameters, Semiconductor Device Research Symposium, 2007.

N. Defrance, Caractérisation et modélisation de dispositifs de la lière nitrure pour la conception de circuits intégrés de puissance hyperfréquences, 2007.

Y. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller et al., Very-high power density algan/gan hemts, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.586-590, 2001.

H. Xu, C. Sanabria, Y. Wei, S. Heikman, S. Keller et al., Characterization of two eld-plated gan hemt structures, IEEE Topical workshop on power ampliiers for wireless communications, 2004.

U. K. Mishra, P. Parikh, and Y. Wu, AlGaN/GaN HEMTs-an overview of device operation and applications, Proceedings of the IEEE, vol.90, issue.6, pp.1022-1031, 2002.
DOI : 10.1109/JPROC.2002.1021567

S. Karmalkar and U. K. Mishra, Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate, IEEE Transactions on Electron Devices, vol.48, issue.8, pp.1515-1521, 2001.
DOI : 10.1109/16.936500

R. J. Trew, High-Frequency Solid-State Electronic Devices, IEEE Transactions on Electron Devices, vol.52, issue.5, pp.638-649, 2005.
DOI : 10.1109/TED.2005.845862

S. Karmalkar, M. S. Shur, G. Simin, and M. A. Khan, Field-Plate Engineering for HFETs, IEEE Transactions on Electron Devices, vol.52, issue.12, pp.2534-2540, 2005.
DOI : 10.1109/TED.2005.859568

Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue et al., 10-W/mm AlGaN-GaN HFET with a field modulating plate, IEEE Electron Device Letters, vol.24, issue.5, pp.289-291, 2003.
DOI : 10.1109/LED.2003.812532

A. Chini, D. Buttari, R. Coe, S. Heikman, S. Keller et al., 12???W???mm power density AlGaN???GaN HEMTs on sapphire substrate, Electronics Letters, vol.40, issue.1, pp.73-74, 2004.
DOI : 10.1049/el:20040017

Y. Wu, A. Saxler, M. Moore, R. Smith, P. Sheppard et al., 30-W/mm GaN HEMTs by Field Plate Optimization, IEEE Electron Device Letters, vol.25, issue.3, pp.117-119, 2004.
DOI : 10.1109/LED.2003.822667

C. Lee, P. Saunier, J. Yang, and M. A. Khan, AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz, IEEE Electron Device Letters, vol.24, issue.10, pp.616-618, 2003.
DOI : 10.1109/LED.2003.817383

R. Trew, High voltage microwave/mm-wave eld-eeect transistors

R. Trew, Wide bandgap transistor ampliiers for improved performance microwave power and radar applications, Microwaves, Radar and Wireless Communications 15th International Conference on, pp.18-23, 2004.
DOI : 10.1109/mikon.2004.1356844

R. Akis, J. S. Ayubi-moak, N. Faralli, D. K. Ferry, S. M. Goodnick et al., The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length, IEEE Electron Device Letters, vol.29, issue.4, pp.306-308, 2008.
DOI : 10.1109/LED.2008.918391

D. Guerra, R. Akis, F. A. Marino, D. K. Ferry, S. M. Goodnick et al., Aspect Ratio Impact on RF and DC Performance of State-of-the-Art Short-Channel GaN and InGaAs HEMTs, IEEE Electron Device Letters, vol.31, issue.11, pp.1217-1219, 2010.
DOI : 10.1109/LED.2010.2066954

D. Guerra, R. Akis, D. K. Ferry, S. M. Goodnick, M. Saraniti et al., Cellular monte carlo study of rf short-channel eeects, eeective gate length, and aspect ratio in gan and ingaas hemts, Computational Electronics (IWCE), pp.1-4, 2010.

J. Gerbedoen, Conception et réalisation technologique de transistors de la lière HEMTs AlGaN/GaN sur substrat silicium pour l'ampliication de puissance hyperfréquence, 2009.

P. Altuntas, Fabrication et caractérisation de dispositifs de type HEMT de la lière GaN pour des applications de puissance hyperfréquence, 2015.

C. Lo, T. S. Kang, L. Liu, C. Chang, S. Pearton et al., Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure, Applied Physics Letters, vol.2008, issue.26, p.262116, 2010.
DOI : 10.1103/PhysRev.54.647

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart et al., First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology, Microwave and Optical Technology Letters, vol.23, issue.4, pp.311-315, 2005.
DOI : 10.1002/mop.20974
URL : https://hal.archives-ouvertes.fr/hal-00126457

J. Shiu, J. Huang, V. Desmaris, C. Chang, C. Lu et al., Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol.28, issue.6, pp.476-478, 2007.
DOI : 10.1109/LED.2007.896904

X. W. Zhang, K. J. Jia, Y. G. Wang, Z. H. Feng, and Z. P. Zhao, Alngan hemt t-gate optimal design, Applied Mechanics and Materials, pp.1790-1792, 2013.

S. Arulkumaran, T. Egawa, H. Ishikawa, M. Umeno, and T. Jimbo, Effects of annealing on Ti, Pd, and Ni/n-Al/sub 0.11/Ga/sub 0.89/N Schottky diodes, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.573-580, 2001.
DOI : 10.1109/16.906453

K. Shinohara, D. Regan, A. Corrion, D. Brown, S. Burnham et al., Deeply-scaled self-aligned-gate gan dh-hemts with ultrahigh cuto frequency, Electron Devices Meeting (IEDM), 2011 IEEE International, pp.19-20, 2011.

T. Tsuruoka, M. Kawasaki, S. Ushioda, R. Franchy, Y. Naoi et al., Combined HREELS/LEED study on the oxidation of GaN surfaces, Surface Science, vol.427, issue.428, pp.257-261, 1999.
DOI : 10.1016/S0039-6028(99)00275-7

L. Lin, Y. Luo, P. T. Lai, and K. M. Lau, Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN, Thin Solid Films, vol.515, issue.4, pp.2111-2115, 2006.
DOI : 10.1016/j.tsf.2006.07.036

Y. Douvry, Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence: conception et fabrication, caractérisation et abilité, 2012.

M. Hudait and S. Krupanidhi, Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures, Physica B: Condensed Matter, vol.307, issue.1-4, pp.125-137, 2001.
DOI : 10.1016/S0921-4526(01)00631-7

A. Curutchet, Etude du bruit aux basses fréquences dans les transistors à Haute Mobilité Electronique à base de Nitrure de Gallium, 2005.

S. Vitanov, V. Palankovski, S. Maroldt, and R. Quay, Non-linearity of transconductance and source?gate resistance of hemts, Proc. European Solid-State Device Research Conf. Fringe Poster Session

T. Palacios, S. Rajan, A. Chakraborty, S. Heikman, S. Keller et al., Influence of the Dynamic Access Resistance in the<tex>$g_m$</tex>and<tex>$f_T$</tex>Linearity of AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, vol.52, issue.10, pp.2117-2123, 2005.
DOI : 10.1109/TED.2005.856180

D. K. Schroder, Semiconductor material and device characterization, 2006.
DOI : 10.1002/0471749095

M. Devika, N. K. Reddy, F. Patolsky, and K. Gunasekhar, Ohmic contacts to SnS films: Selection and estimation of thermal stability, Journal of Applied Physics, vol.28, issue.12, p.124503, 2008.
DOI : 10.1016/0039-6028(77)90328-4

Y. Chen, M. Ogura, S. Yamasaki, and H. Okushi, Ohmic contacts on p-type homoepitaxial diamond and their thermal stability, Semiconductor Science and Technology, vol.20, issue.8, p.860, 2005.
DOI : 10.1088/0268-1242/20/8/041

M. Marinkovic, Contact resistance eeects in thin lm solar cells and thin lm transistors, 2013.

G. H. Jessen, R. C. Fitch, J. K. Gillespie, G. Via, A. Crespo et al., Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices, IEEE Transactions on Electron Devices, vol.54, issue.10, pp.2589-2597, 2007.
DOI : 10.1109/TED.2007.904476

R. Cuerdo, Y. Pei, Z. Chen, S. Keller, S. Denbaars et al., The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol.30, issue.3, pp.209-212, 2009.
DOI : 10.1109/LED.2008.2011289

M. Wang and K. J. Chen, Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping, IEEE Electron Device Letters, vol.32, issue.4, pp.482-484, 2011.
DOI : 10.1109/LED.2011.2105460

L. Brunel, N. Malbert, A. Curutchet, N. Labat, and B. Lambert, Kink eeect characterization in algan/gan hemts by dc and drain current transient measurements, Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European, pp.270-273, 2012.

N. Nasser, Y. Z. Zhen, L. Jiawei, and X. Y. Bou, Gan heteroeptaxial growth techniques, Journal of Microwaves, Optoelectronics and Electromagnetic ApplicationsJMOe), vol.2, issue.3, pp.22-31, 2001.

T. Parenty, Étude et perspective des transistors à hétérostructure AlInAs/GaInAs de longueur de grille inférieure à 100 nm et conception de circuits intégrés en bande G, 2003.

A. Davidson, K. Jones, and E. Strid, LRM and LRRM Calibrations with Automatic Determination of Load Inductance, 36th ARFTG Conference Digest, pp.57-63, 1990.
DOI : 10.1109/ARFTG.1990.323996

M. Uren, K. Nash, R. Balmer, T. Martin, E. Morvan et al., Punch-through in short-channel AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, vol.53, issue.2, pp.395-398, 2006.
DOI : 10.1109/TED.2005.862702
URL : https://hal.archives-ouvertes.fr/hal-00127940

S. Kato, Y. Satoh, H. Sasaki, I. Masayuki, and S. Yoshida, C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE, Journal of Crystal Growth, vol.298, pp.831-834, 2007.
DOI : 10.1016/j.jcrysgro.2006.10.192

W. Dongfang, Y. Tingting, W. Ke, C. Xiaojuan, and L. Xinyu, Gate-structure optimization for high frequency power AlGaN/GaN HEMTs, Journal of Semiconductors, vol.31, issue.5, p.54003, 2010.
DOI : 10.1088/1674-4926/31/5/054003

D. Liu, M. Hudait, Y. Lin, H. Kim, S. A. Ringel et al., Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs, Solid-State Electronics, vol.51, issue.6, pp.838-841, 2007.
DOI : 10.1016/j.sse.2007.04.002

S. Arulkumaran, T. Egawa, S. Matsui, and H. Ishikawa, Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN???GaN high-electron-mobility transistors on 4in. diameter silicon, Applied Physics Letters, vol.693, issue.12, p.123503, 2005.
DOI : 10.1002/1521-396X(200111)188:1<213::AID-PSSA213>3.3.CO;2-#

S. Lei, F. Shi-wei, G. Chun-sheng, Z. Hui, and W. Ning, The degradation and recovery properties of algan/gan high-electron mobility transistors under direct current reverse step voltage stress, Chinese Physics B, vol.22, issue.2, p.27201, 2013.

C. Zeng, Y. Wang, X. Hong, P. Lai, Y. Huang et al., Degradation characteristics and analysis of algan/gan high electron mobility transistors under reverse gate bias step stress, Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the, pp.741-744, 2013.

J. Joh, J. A. Del-alamo, K. Langworthy, S. Xie, and T. Zheleva, Role of stress voltage on structural degradation of GaN high-electron-mobility transistors, Microelectronics Reliability, vol.51, issue.2, pp.201-206, 2011.
DOI : 10.1016/j.microrel.2010.08.021

S. Demirtas and J. A. , EEect of trapping on the critical voltage for degradation in gan high electron mobility transistors, Reliability Physics Symposium (IRPS), pp.134-138, 2010.

G. Wen-ping, D. Huan-tao, N. Jin-yu, H. Yue, Z. Jin-cheng et al., High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors, Chinese Physics B, vol.18, issue.4, p.1601, 2009.
DOI : 10.1088/1674-1056/18/4/052

I. Hwang, J. Kim, S. Chong, H. Choi, S. Hwang et al., Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol.34, issue.12, pp.1494-1496, 2013.
DOI : 10.1109/LED.2013.2286173

N. Braga, R. Mickevicius, R. Gaska, X. Hu, M. Shur et al., Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors, Journal of Applied Physics, vol.84, issue.11, pp.6409-6413, 2004.
DOI : 10.1063/1.368550

J. A. Del-alamo and J. Joh, Gan hemt reliability Microelectronics reliability, pp.1200-1206, 2009.

J. Joh, L. Xia, and J. A. Del-alamo, Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors, 2007 IEEE International Electron Devices Meeting, pp.385-388, 2007.
DOI : 10.1109/IEDM.2007.4418953

J. Joh and J. A. , A model for the critical voltage for electrical degradation of GaN high electron mobility transistors, Microelectronics Reliability, vol.50, issue.6, pp.287-289, 2008.
DOI : 10.1016/j.microrel.2010.02.015

D. Marcon, T. Kauerauf, F. Medjdoub, J. Das, M. Van-hove et al., A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs, 2010 International Electron Devices Meeting, pp.20-23, 2010.
DOI : 10.1109/IEDM.2010.5703398

M. Meneghini, A. Stocco, M. Bertin, D. Marcon, A. Chini et al., Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias, Applied Physics Letters, vol.2011, issue.3, p.33505, 2012.
DOI : 10.1016/S0026-2714(99)00051-7

F. Gao, B. Lu, L. Li, S. Kaun, J. S. Speck et al., Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol.2011, issue.22, p.223506, 2011.
DOI : 10.1103/PhysRevLett.96.196402

A. Sozza, C. Dua, E. Morvan, S. Delage, F. Rampazzo et al., Evidence of traps creation in gan/algan/gan hemts aaer a 3000 hour on-state and o-state hot-electron stress, Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, p.4, 2005.

G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon et al., Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives, IEEE Transactions on Device and Materials Reliability, vol.8, issue.2, pp.332-343, 2008.
DOI : 10.1109/TDMR.2008.923743

S. Karmalkar, M. S. Shur, G. Simin, and M. A. Khan, Field-Plate Engineering for HFETs, IEEE Transactions on Electron Devices, vol.52, issue.12, pp.2534-2540, 2005.
DOI : 10.1109/TED.2005.859568

H. Onodera and K. Horio, Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors, Semiconductor Science and Technology, vol.27, issue.8, p.85016, 2012.
DOI : 10.1088/0268-1242/27/8/085016

C. Hu and T. Hashizume, Non-localized trapping eeects in algan/gan heterojunction eldeeect transistors subjected to on-state bias stress, Journal of Applied Physics, vol.111, issue.8, p.84504, 2012.

M. Bouya, D. Carisetti, N. Malbert, N. Labat, P. Perdu et al., Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC, Microelectronics Reliability, vol.47, issue.9-11, pp.1630-1633, 2007.
DOI : 10.1016/j.microrel.2007.07.085
URL : https://hal.archives-ouvertes.fr/hal-00197479

C. Ostermaier, P. Lagger, M. Alomari, P. Herfurth, D. Maier et al., Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure, Microelectronics Reliability, vol.52, issue.9-10, pp.1812-1815, 2012.
DOI : 10.1016/j.microrel.2012.06.006

Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, and T. Mizutani, Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors, Applied Physics Letters, vol.170, issue.12, pp.2184-2186, 2004.
DOI : 10.1063/1.126940

M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini, Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, vol.55, issue.7, pp.1592-1602, 2008.
DOI : 10.1109/TED.2008.924437

G. Meneghesso, M. Meneghini, F. Medjdoub, Y. Tagro, B. Grimbert et al., First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications, IEEE Transactions on Device and Materials Reliability, vol.13, issue.4, pp.480-488, 2013.
DOI : 10.1109/TDMR.2013.2276425
URL : https://hal.archives-ouvertes.fr/hal-00913577

Y. Chou, D. Leung, I. Smorchkova, M. Wojtowicz, R. Grundbacher et al., Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting, Microelectronics Reliability, vol.44, issue.7, pp.1033-1038, 2004.
DOI : 10.1016/j.microrel.2004.03.008

. Dans-ce-contexte, cette thèse porte sur l'évaluation de la abilité des HEMTs GaN sur substrat

. Si, 111) à grille ultra-courte, dédiés aux applications de puissance à fréquence supérieure à 40 GHz

. Dans-le-cadre-de-ces-travaux, on a étudié deux technologies fournies par l'IEMN et dont l'épitaxie est réalisée par le CHREA-CNRS

C. De-jaeger and N. Malbert, Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress, Microelectronics Reliability, 2016 ? International conferences Hadhemi Lakhdhar

C. De-jaeger and N. Malbert, Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress, 27th European Symposium on Reliability of Electron Devices 2016 ? National conferences

C. De-jaeger and N. Malbert, Évaluation de la abilité des composants HEMTs AlGaN / GaN à grille nanométrique sur substrat de silicium par des essais de vieillissement accéléré "on-state, 20emes Journées Nationales Micro-Ondes, Saint-Malo (France), p.2017

H. Lakhdhar, Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz, GaNex meeting 2015, 2016.
URL : https://hal.archives-ouvertes.fr/tel-01763431