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Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz

Abstract : This Ph.D. work focuses on the reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on silicon substrate dedicated to power applications at frequency above 40GHz. It was carried out within IMS Bordeaux and IEMN Lille laboratories.This work initially compares AlGaN/GaN HEMTs grown by MOCVD with those grown using MBE, through electrical characterization.In particular, the device geometry impact on the device performances has been studies by static electrical characterization.Step-stress experiments are performed to investigate reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on Si substrate. A methodology based on a sequence of step stress tests has been defined for in-situ diagnosis of a permanent degradation and of a degradation which is identified by a drain current transient occurring during each step of the ageing sequence . The same stress conditions were applied on HEMTs with different geometries. It is found no evolution of the drain current during non stressful steps. The value of the critical degradation voltage beyond which the stress drain current starts to decrease significantly is also found dependent on the stress bias conditions, the gate-drain distance and the gate length. Moreover, the safe operating area of this technology has been determined.
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Submitted on : Wednesday, April 11, 2018 - 10:19:07 AM
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  • HAL Id : tel-01763431, version 1

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Hadhemi Lakhdhar. Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz. Other. Université de Bordeaux, 2017. English. ⟨NNT : 2017BORD0941⟩. ⟨tel-01763431⟩

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