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Theses

3D integration of single electron transistors in the back-end-of-line of 28 nm CMOS technology for the development of ultra-low power sensors

Yosri Ayadi 1
1 INL - DE - INL - Dispositifs Electroniques
INL - Institut des Nanotechnologies de Lyon
Abstract : The need of integration of new functionalities on mobile and autonomous electronic systems has to take into account all the problematic of heterogeneity together with energy consumption and thermal power dissipation. Therefore, the work presented in this thesis is focussed on the proof of concept of 3D monolithical integration of SETs on CMOS technology for high sensitivity and ultra-low power gas sensing functionality. The proposed approach is to integrate metallic double gate-single electron transistors (DG-SETs) in the Back-End-Of-Line (BEOL) of CMOS circuits (within the CMOS interconnect layers) using the nanodamascene process. The main objective of this Ph.D. thesis can be divided into 4 parts: (1) modelling and simulation of a DG-SET and an FD-SOI MOSFET based gas sensor response, and estimation of the sensitivity as well as the power consumption; (2) investigation of Pt sensitivity to hydrogen by surface charge measurement technique and development of the sensing electrode surface texturing process with CNT networks; (3) development and optimization of DG-SET integration process in the BEOL of a CMOS substrate, and (4) FD-SOI MOSFET functionalization with Pt for H2 sensing.
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Submitted on : Thursday, March 29, 2018 - 6:36:07 PM
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  • HAL Id : tel-01753903, version 1

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Yosri Ayadi. 3D integration of single electron transistors in the back-end-of-line of 28 nm CMOS technology for the development of ultra-low power sensors. Electronics. Université de Lyon; Université de Sherbrooke (Québec, Canada), 2016. English. ⟨NNT : 2016LYSEI155⟩. ⟨tel-01753903⟩

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