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Atomic layer deposition of boron nitride

Abstract : This thesis achieves 3 years of PhD studies on “Atomic layer deposition (ALD) of boron nitride (BN)”. The aim of this PhD work is to adapt the polymer derived ceramics (PDCs) route to the ALD technique for h-BN thin film growth and elaboration of functional nanostructures. A novel two-step ammonia-free ALD process, which includes ALD deposition of polyborazine at low temperature (80 °C) from 2,4,6-trichloroborazine and hexamethyldisilazane followed by post heat treatment under controlled atmosphere, has been established. Conformal and homogeneous BN thin films have been deposited onto various substrates. The self-limitation of the reactions on flat substrates and the conformality of the films on structured substrates have been verified. Functional BN nanostructures have thus been fabricated using substrates or templates with different dimensionalities. In particular, their applications as protective coatings as well as filter and absorber to purify polluted water from organic/oil hav e been investigated. Finally, a second low temperature (85-150 °C) ALD process using tri(isopropylamine)borane and methylamine as precursors has preliminary been studied in order to confirm the adaptability of PDCs route to ALD technique. BN thin films have been grown onto flat substrate and it has been proven that tri(isopropylamino)borane vapor can infiltrate into electrospun polyacrylonitrile fibers.This work was carried out at University of Lyon and financially supported by the National Research Agency (project n° ANR-16-CE08-0021-01)
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Submitted on : Tuesday, March 27, 2018 - 10:05:08 AM
Last modification on : Thursday, June 4, 2020 - 3:08:02 PM
Long-term archiving on: : Thursday, September 13, 2018 - 10:49:41 AM


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  • HAL Id : tel-01744104, version 1



Wenjun Hao. Atomic layer deposition of boron nitride. Other. Université de Lyon, 2017. English. ⟨NNT : 2017LYSE1311⟩. ⟨tel-01744104⟩



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