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Modélisation de transistors à effet de champ pour les applications térahertz

Abstract : The objective of this work is the use of plasma oscillations mechanism in the electron mobility transistors channel that based of InGaAs, this materials characterize by it great interest for Terahertz thanks to its high electron mobility applications. This work registered in the context of recent studies in which the use of devices based on wave excitation of two-dimensional plasma has been proposed for Terahertz applications.This study is conducted through the development of a simulation tool based on the hydrodynamic model coupled with the Poisson equation 2D. the continued current response to THz electrical excitation has been studied and the influence of the different parameters of transistor on plasma resonances is demonstrated. A study of the spectral density of the current fluctuation is then presented, we demonstrate that the main resonances in the drain current noise spectrum are the same as those observed in the current response to an external THz excitation. The current response at different perturbation applied upon the drain and the gate of the HEMT is finally evaluated by means of the description of the small-signal equivalent circuit, which would possibly further studies of plasma oscillation in HEMT transistors.
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  • HAL Id : tel-01743805, version 1



Abdelhamid Mahi. Modélisation de transistors à effet de champ pour les applications térahertz. Optique / photonique. Université Montpellier II - Sciences et Techniques du Languedoc, 2014. Français. ⟨NNT : 2014MON20156⟩. ⟨tel-01743805⟩



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