Skip to Main content Skip to Navigation
Theses

Development and understanding of III-N layers for the improvement of high power transistors

Abstract : This thesis is mainly focused on the development of III-N materials for HEMTs power transistors, as well as quantum wells and optronics applications that result to a lesser extent. Following a reminder of the properties of nitrides, the different possible applications, the principle of the MOCVD and the different characterizations used for this work, we first treated the growth of GaN at low temperature, that is to say below 1050degres C. The manufacture of multiple quantum wells involving the alternation of GaN and InAlN or InGaAlN layers forces us to work at these temperatures, which generates the appearance of a defect in surface of the GaN which is called V-defect. An advanced experimental study allowed us to understand how these defects appear and evolve according to the growth parameters. A model based on surface energies could be developed and explains the evolution of these defects. Then we defined the influence of many MOCVD growth parameters by MOCVD and derived, from the multiple trends highlighted, the models and explanations justifying this or that physical and chemical property of the material. Downstream, these are electrical characterizations and mainly resistivity measurements that have been processed to compare the performance of our indium-based samples to those of AlGaN/GaN type. The problem of gallium pollution in vertical MOCVD reactors has been highlighted and we have proposed different solutions to limit or even annihilate it. Finally, we have tried to develop protective layers based on SiN and GaN in order to protect our indium-based alloys for the next technological steps required to manufacture a component, for example.
Document type :
Theses
Complete list of metadatas

Cited literature [106 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-01734967
Contributor : Abes Star :  Contact
Submitted on : Thursday, March 15, 2018 - 11:47:08 AM
Last modification on : Friday, October 23, 2020 - 5:03:23 PM
Long-term archiving on: : Tuesday, September 11, 2018 - 12:13:55 AM

File

BOUVEYRON_2017_archivage.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-01734967, version 1

Collections

STAR | CEA | DRT | LETI | CEA-GRE

Citation

Romain Bouveyron. Development and understanding of III-N layers for the improvement of high power transistors. Electric power. Université Grenoble Alpes, 2017. English. ⟨NNT : 2017GREAI074⟩. ⟨tel-01734967⟩

Share

Metrics

Record views

269

Files downloads

690