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Space-time study of energy deposition with intense infrared laser pulses for controlled modification inside silicon

Abstract : The modification of bulk-silicon is realized today with infrared nanosecond lasers. However, the regime of interest for controlled modifications inside transparent materials is femtosecond pulses. Today, there is no demonstration of permanent modification in bulk-Si with ultra-short laser pulses (100 fs). To increase our knowledge on the interaction between femtosecond lasers and silicon, we have developed ultra-fast infrared microscopy experiments. First, we characterize the microplasma confined inside the bulk, being the generation of free-carriers under nonlinear ionization processes, followed by the complete relaxation of the material. These results, combined with the reconstruction of the beam propagation inside silicon, demonstrate that the energy deposition is strongly limited by nonlinear absorption and propagation effects. This analysis has been confirmed by a numerical model simulating the nonlinear propagation of the femtosecond pulse. The understanding of this clamping has allowed us to develop new experimental arrangements, leading to the modification of the bulk of Si with short pulses.
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https://tel.archives-ouvertes.fr/tel-01730217
Contributor : Margaux Chanal <>
Submitted on : Tuesday, March 13, 2018 - 10:01:39 AM
Last modification on : Wednesday, March 14, 2018 - 1:22:30 AM
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Margaux Chanal. Space-time study of energy deposition with intense infrared laser pulses for controlled modification inside silicon. Optics / Photonic. Aix Marseille Université, 2017. English. ⟨tel-01730217⟩

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