Etude expérimentale des effets mécaniques et géométriques sur le transport dans les transistors nanofils à effet de champ

Abstract : This document is the result of my thesis work at the CEA-Leti Grenoble.It covers the evolution of the piezoresistive effect and the electrical transport properties of field effect transistor device against several variable such as geometry, temperature, internal stress....The focus of this work is to understand the effect brought by extreme reducing of channel and gate dimensions in MOSFET transistors.A special attention is given on electrical data modeling. Different algorithms are used to extract key parameters of devices and their viability against the device dimensions considered is discussed. A new piezoresistive coefficients model is drawn from a known mobility model,it allows to draw a reliable tendancy of piezoresistive variation against the cross section (channel width and thickness) of a given multigate device.An effect not accountable by standard theory for small cross section was shown by the measurements, and some hypothesis are made and discussed to explain whose results.
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Johan Pelloux-Prayer. Etude expérimentale des effets mécaniques et géométriques sur le transport dans les transistors nanofils à effet de champ. Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2017. Français. ⟨NNT : 2017GREAY042⟩. ⟨tel-01708025⟩

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