GaN X-band 43% internally-matched FET with 60W output power, Asia-Pacific Microwave Conference, pp.1-4, 2008. ,
A 68% efficiency, C-band 100W GaN power amplifier for space applications, IEEE MTT-S International Microwave Symposium, pp.1384-1387, 2010. ,
DOI : 10.1109/mwsym.2010.5516252
100???nm gate AlGaN/GaN HEMTs on silicon with fT=90???GHz, Electronics Letters, vol.45, issue.7, pp.376-377, 2009. ,
DOI : 10.1049/el.2009.0074
AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX, IEEE Electron Device Lett, vol.34, issue.1, pp.36-38, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-00796433
AlGaN Channel HEMT With Extremely High Breakdown Voltage, IEEE Transactions on Electron Devices, vol.60, issue.3, pp.1046-1053, 2013. ,
DOI : 10.1109/TED.2012.2233742
Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz, Electron. Lett, vol.52, issue.21, pp.1813-1814, 2016. ,
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs, IEEE Transactions on Microwave Theory and Techniques, vol.60, issue.6 ,
DOI : 10.1109/TMTT.2012.2187535
GaN-Based RF Power Devices and Amplifiers, Proc. IEEE, pp.287-305, 2008. ,
DOI : 10.1109/JPROC.2007.911060
Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate, Applied Physics Letters, vol.2006, issue.22, p.223502, 2011. ,
DOI : 10.1063/1.1584077
URL : https://hal.archives-ouvertes.fr/hal-00603008
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz, IEEE Electron Device Letters, vol.36, issue.6, pp.549-551, 2015. ,
DOI : 10.1109/LED.2015.2421311
High PAE high reliability AlN/GaN double heterostructure, Solid-State Electron, vol.113, pp.49-53, 2015. ,
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, Journal of Applied Physics, vol.15, issue.6, pp.3222-3233, 1999. ,
DOI : 10.1063/1.366585
Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices, IEEE Transactions on Electron Devices, vol.56, issue.10, pp.2178-2185, 2009. ,
DOI : 10.1109/TED.2009.2028400
URL : https://hal.archives-ouvertes.fr/hal-00473432
Polarization Induced 2DEG in AlGaN/GaN HEMTs: On the origin, DC and transient characterization, 2000. ,
High electron mobility in nearly lattice-matched ,
GaN heterostructure field effect transistors, Appl. Phys. Lett, vol.91, issue.13, p.132116, 2007. ,
Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors, Applied Physics Letters, vol.98, issue.18, p.181111, 2011. ,
DOI : 10.1016/j.jcrysgro.2006.12.054
High conductivity modulation doped AlGaN/GaN multiple channel heterostructures, Journal of Applied Physics, vol.35, issue.8, pp.5321-5325, 2003. ,
DOI : 10.1063/1.1610244
Trapping effects and microwave power performance in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.465-471, 2001. ,
DOI : 10.1109/16.906437
Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors, physica status solidi (c), vol.2, issue.7 ,
DOI : 10.1002/pssc.200461325
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol.22, issue.11, pp.504-506, 2001. ,
DOI : 10.1109/55.962644
Schottky-Drain Technology for AlGaN ,
Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias, Electronics Letters, vol.30, issue.25, pp.2175-2176, 1994. ,
DOI : 10.1049/el:19941461
Analysis of DC?RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements, IEEE MTT-S International Microwave Symposium Digest, pp.503-506, 2005. ,
Analysis of DC???RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering, IEEE Transactions on Electron Devices, vol.56, issue.1, pp.13-19, 2009. ,
DOI : 10.1109/TED.2008.2008674
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol.21, issue.6, pp.268-270, 2000. ,
DOI : 10.1109/55.843146
Effect of passivation on AlGaN/GaN HEMT device performance, IEEE International Symposium on Compound Semiconductors, pp.357-363, 2000. ,
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate, IEEE Transactions on Electron Devices, vol.48, issue.8, pp.1515-1521, 2001. ,
DOI : 10.1109/16.936500
Field-plated GaN HEMTs and amplifiers, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05., pp.170-172, 2005. ,
DOI : 10.1109/CSICS.2005.1531800
30-W/mm GaN HEMTs by Field Plate Optimization, IEEE Electron Device Letters, vol.25, issue.3, pp.117-119, 2004. ,
DOI : 10.1109/LED.2003.822667
Optimisation of carbon doped buffer layer for AlGaN/GaN HEMT devices, Journal of Crystal Growth, vol.414, pp.232-236, 2015. ,
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs, IEEE Transactions on Electron Devices, vol.59, issue.12, pp.3327-3332, 2012. ,
DOI : 10.1109/TED.2012.2216535
Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness, 47th European Solid State Device Research Conference (ESSDERC), pp.228-231, 2017. ,
Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors, IEEE Transactions on Electron Devices, vol.60, issue.10, pp.3190-3196, 2013. ,
DOI : 10.1109/TED.2013.2274477
A Current-Transient Methodology for Trap Analysis for ,
Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries, Semicond. Sci. Technol, vol.30, issue.3, p.35015, 2015. ,
The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs, IEEE Transactions on Electron Devices, vol.59, issue.5, pp.1393-1401, 2012. ,
DOI : 10.1109/TED.2012.2188634
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaNbased conducting channels, Appl. Phys. Lett, vol.82, issue.5, pp.748-750, 2003. ,
Degradation Mechanisms for GaN and GaAs High Speed Transistors, Materials, vol.14, issue.460, pp.2498-2520, 2012. ,
DOI : 10.1116/1.3359603
URL : http://www.mdpi.com/1996-1944/5/12/2498/pdf
Degradation of ,
URL : https://hal.archives-ouvertes.fr/hal-00569692
GaN high electron mobility transistors related to hot electrons, Appl. Phys. Lett, vol.100, issue.23, p.233508, 2012. ,
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method, IEEE Trans. Electron Devices, vol.58, issue.9, pp.2996-3003, 2011. ,
Reliability issues of Gallium Nitride High Electron Mobility Transistors Trapping and Degradation Mechanisms in GaN-Based HEMTs, Gallium Nitride (GaN), 0 vols, pp.39-50, 2010. ,
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N?GaN grown by molecular-beam epitaxy, J. Appl. Phys. J, vol.95, issue.11, pp.6414-6419, 2004. ,
On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors Temperature dependence of gate?leakage current in AlGaN/GaN high-electron-mobility transistors, Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors, pp.153503-3110, 2003. ,
Comparison and Modeling Surface- Potential-Based Compact Modeling of Gate Current in AlGaN, GaN-Based RF Power Devices and Amplifiers Proc. IEEE, pp.3157-3165, 2008. ,
AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX, IEEE Electron Device Lett, vol.34, issue.1, pp.36-38, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-00796433
Reliability issues of Gallium Nitride High Electron Mobility Transistors, Int. J. Microw. Wirel. Technol, vol.2, issue.01, pp.39-50, 2010. ,
Veryhigh power density AlGaN/GaN HEMTs, GaN-Based RF Power Devices and Amplifiers Proc. IEEE, pp.586-590, 2001. ,
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs, IEEE Transactions on Microwave Theory and Techniques, vol.60, issue.6 ,
DOI : 10.1109/TMTT.2012.2187535
High Breakdown (> 1500 V) AlGaN/GaN HEMTs by Substrate- Transfer Technology, IEEE Electron Device Lett, vol.60, issue.31 9, pp.1764-1783, 2010. ,
Comparison of GaN HEMTs on Diamond and SiC Substrates 40-W/mm Double Fieldplated GaN HEMTs, 64th Device Research Conference, pp.948-950, 2006. ,
AlGaN/GaN HEMT With 300-GHz $f_{\max}$, IEEE Electron Device Letters, vol.31, issue.3, pp.195-197, 2010. ,
DOI : 10.1109/LED.2009.2038935
Punch-Through in Short-Channel AlGaN/GaN HFETs, IEEE Trans. Electron Devices, vol.53, issue.2, pp.395-398, 2006. ,
URL : https://hal.archives-ouvertes.fr/hal-00127940
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs, IEEE Transactions on Electron Devices, vol.59, issue.12, pp.3327-3332, 2012. ,
DOI : 10.1109/TED.2012.2216535
Gate-recessed AlGaN-GaN HEMTs for High-performance millimeter-wave Applications, IEEE Electron Device Lett, vol.26, issue.6, pp.348-350, 2005. ,
Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors Electron Tunneling Spectroscopy Study of Electrically Active Traps in AlGaN, IEEE Trans. Electron DevicesGaN High Electron Mobility Transistors Appl. Phys. Lett, vol.60, issue.103 22, pp.3190-3196, 2013. ,
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors, IEEE Transactions on Electron Devices, vol.58, issue.1, pp.132-140, 2011. ,
DOI : 10.1109/TED.2010.2087339
Reliability issues of Gallium Nitride High Electron Mobility Transistors, Int. J ,
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section A Microwave Modeling Oxymoron?: Low-Frequency Measurements for Microwave Device Modeling, Appl. Phys. Lett. IEEE Microw. Mag, vol.102, issue.15 4, pp.92-107, 2014. ,
Trap-Profile Extraction Using High-Voltage Capacitance-Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates On the Identification of Buffer Trapping for Bias-Dependent Dynamic of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier Electronic Surface and Dielectric Interface States on GaN and AlGaN Deep Levels Characterization in GaN HEMTs?Part II: Experimental and Numerical Evaluation of Self- Heating Effects on the Extraction of Traps Activation Energy, Mechanisms of Gate Lag in GaN/AlGaN/GaN High Electron Mobility Transistors, pp.835-839, 2003. ,
Deep Traps in GaN-based Structures as Affecting the Performance of GaN devices Comprehensive analysis of GR noise in InGaP?GaAs HBT by physics-based simulation and low frequency characterization Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN, Statistics of the Recombinations of Holes and Electrons Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140), pp.1-56, 1952. ,
Frequency-dependent electrical characteristics of GaAs MESFETs, IEEE Trans. Electron Devices, vol.37, issue.5, pp.1217-1227, 1990. ,
Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations, IEEE Journal of the Electron Devices Society, vol.5, issue.3, pp.175-181, 2017. ,
DOI : 10.1109/JEDS.2017.2672685
URL : https://hal.archives-ouvertes.fr/hal-01661741
Experimental and numerical correlation between current-collapse and Fe-doping profiles in GaN HEMTs, IEEE International Reliability Physics Symposium (IRPS), 2012. ,
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition Electron trapping effects in C-and Fe-doped GaN and AlGaN, J. Electron. Mater. Solid-State Electron, vol.37, issue.49 10, pp.569-572, 2005. ,
Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer, IEEE Trans. Electron Devices, vol.63, issue.1, pp.326-332, 2016. ,
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design, IEEE Electron Device Letters, vol.36, issue.10, pp.1011-1014, 2015. ,
DOI : 10.1109/LED.2015.2474116
?????????0.57???eV traps in AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol.102, issue.19, 2013. ,
DOI : 10.1007/s11664-007-0313-3
Traps localization and analysis in GaN HEMTs, Microelectronics Reliability, vol.54, issue.9-10, pp.2222-2226, 2014. ,
DOI : 10.1016/j.microrel.2014.07.085
Role of Buffer Doping and Pre-existing Trap States in the Current Collapse and Degradation of AlGaN/GaN HEMTs Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25-µm AlGaN/GaN HEMTs Carrier mobilities in silicon empirically related to doping and field Sentaurus Device User Guide, IEEE International Reliability Physics Symposium Proc. IEEE Proc. IEEE, pp.1550-1552, 1968. ,
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, Journal of Applied Physics, vol.15, issue.6, p.3222, 1999. ,
DOI : 10.1063/1.366585
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, Thermal analysis of AlN/GaN/AlGaN HEMTs Grown on Si and SiC Substrate through TCAD Simulations and Measurements 11th European Microwave Integrated Circuits Conference (EuMIC), pp.250-145, 2000. ,
DOI : 10.1063/1.121767
Experimental studies on 1/f noise, Reports on Progress in Physics, vol.44, issue.5, p.479, 1981. ,
DOI : 10.1088/0034-4885/44/5/001
Noise as a diagnostic tool for quality and reliability of electronic devices, IEEE Transactions on Electron Devices, vol.41, issue.11, pp.2176-2187, 1994. ,
DOI : 10.1109/16.333839
Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors, European Microwave Integrated Circuits Conference, pp.475-477, 2006. ,
DOI : 10.1109/55.735751
Direct Comparison of Traps in InAlN ,
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements, IEEE Trans. Electron Devices, vol.103, issue.60 10, pp.33509-3166, 2013. ,
Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy, Materials Science and Engineering: C, vol.28, issue.5-6, pp.5-6, 2008. ,
DOI : 10.1016/j.msec.2007.10.068
URL : https://hal.archives-ouvertes.fr/hal-00357801
Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy, Materials Science and Engineering: C, vol.26, issue.2-3, pp.383-386, 2006. ,
DOI : 10.1016/j.msec.2005.10.033
URL : https://hal.archives-ouvertes.fr/hal-00154931
AlGaN HEMTs grown on Si and SiC Substrate through On-Wafer Measurements and TCAD-based Physical Device Simulations Based on Publications ,
Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation, 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), pp.1-4, 2016. ,
DOI : 10.1109/PRIME.2016.7519485
URL : https://hal.archives-ouvertes.fr/hal-01394909
Temperature dependent contact and channel sheet resistance extraction of GaN HEMT, 2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), pp.1-3, 2015. ,
DOI : 10.1109/INMMIC.2015.7330383
URL : https://hal.archives-ouvertes.fr/hal-01285706
Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements, IEEE Transactions on Microwave Theory and Techniques, vol.64, issue.5, pp.1351-1358, 2016. ,
DOI : 10.1109/TMTT.2016.2549528
GaN-Based RF Power Devices and Amplifiers, Proc. IEEE, pp.287-305, 2008. ,
DOI : 10.1109/JPROC.2007.911060
Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications, IEEE Electron Device Lett, vol.26, issue.6, pp.348-350, 2005. ,
Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications, IEEE Electron Device Letters, vol.30, issue.12, pp.1254-1256, 2009. ,
DOI : 10.1109/LED.2009.2032938
Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors, IEEE Transactions on Electron Devices, vol.57, issue.1, pp.353-360, 2010. ,
DOI : 10.1109/TED.2009.2035024
Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate, Appl. Phys. Lett, vol.98, issue.22, p.223502, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00603008
Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures, AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance, pp.888-894, 1999. ,
Low On-Resistance High-Breakdown Normally Off ,
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz, IEEE Electron Device Letters, vol.36, issue.6, pp.549-551, 2006. ,
DOI : 10.1109/LED.2015.2421311
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, Applied Physics Letters, vol.4, issue.2, p.250, 2000. ,
DOI : 10.1063/1.121767
Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors, IEEE Transactions on Electron Devices, vol.60, issue.10, pp.3190-3196, 2013. ,
DOI : 10.1109/TED.2013.2274477
Trapping effects in GaN and SiC microwave FETs, Proc. IEEE Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements, pp.1048-1058, 2002. ,
DOI : 10.1109/JPROC.2002.1021569
Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts Dependence of GaN HEMT Millimeter-Wave Performance on Temperature, [4.21] G. Crupi, G. Avolio, A. Raffo, P. Barmuta, D. M. M. -P. Schreurs, A. Caddemi and G, pp.12-17, 2009. ,
Investigation on the thermal behavior of microwave GaN HEMTs, Solid-State Electron, vol.64, issue.1, pp.28-33, 2011. ,
Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs, IEEE Transactions on Microwave Theory and Techniques, vol.49, issue.12 ,
DOI : 10.1109/22.971629
High-temperature modeling of AlGaN/GaN HEMTs Solid-State Electron Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition, IEEE Trans. Device Mater. Reliab. Appl. Phys. Lett. Appl. Phys. Lett, vol.54, issue.107 4, pp.1105-1112, 2008. ,
Temperature dependent contact and channel sheet resistance extraction of GaN HEMT, 2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), pp.1-3, 2015. ,
DOI : 10.1109/INMMIC.2015.7330383
URL : https://hal.archives-ouvertes.fr/hal-01285706
Temperature-Dependent Dynamic in GaN-Based ,
Role of Surface Traps and Buffer Leakage, IEEE Trans. Electron Devices, vol.62, issue.3, pp.782-787, 2015. ,
Investigation of the dynamic on-state resistance of AlGaN, Microelectron. Reliab, vol.55, pp.9-10, 2015. ,
Microw. Theory Tech Behavioral Modeling of GaN FETs: A Load-Line Approach Large-signal FET model with multiple time scale dynamics from nonlinear vector network analyzer data A low gate bias model extraction technique for AlGaN/GaN HEMTs A new method for determining the FET small-signal equivalent circuit Carrier mobilities in silicon empirically related to doping and field A Thickness-Mode AlGaN/GaN Resonant Body High Electron Mobility Transistor Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements A Thickness-Mode AlGaN/GaN Resonant Body High Electron Mobility Transistor Low-Noise Microwave Performance of AlN, Microwave Symposium Digest (MTT), IEEE MTT-S International Proc. IEEE, pp.2660-2669, 1968. ,
High- Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity, IEEE Electron Device Lett. IEEE Trans. Electron Devices, vol.32, issue.62 3, pp.1677-1679, 2011. ,
Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism, Solid-State Electron, vol.115, pp.12-16, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01285677
Three-dimensional finite-element thermal simulation of GaN-based HEMTs, [5.9] R. Sommet, G. Mouginot, R. Quere, Z. Ouarch, and M. Camiade Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance, pp.468-473, 2009. ,
DOI : 10.1016/j.microrel.2009.02.009
Measurement and Simulation of Electrothermal Effects in Solid-State Devices for RF Applications Federico II Napoli, 2011. [5.12 Sentaurus Device User Guide, Measurement of Channel Temperature in GaN High-Electron Mobility Transistors, pp.2895-2901, 2009. ,
Analysis and modeling of the self-heating effect in SiGe HBTs Eur. Phys Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements, 11th European Microwave Integrated Circuits Conference (EuMIC), pp.11-23, 2004. ,
Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness, 47th European Solid State Device Research Conference (ESSDERC), pp.228-231, 2017. ,
Small Signal Modeling of High Electron Mobility Transistors on Silicon and Silicon Carbide Substrate with Consideration of Substrate Loss, Solid State Electronics, vol.115, pp.12-16, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01285677
Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements, IEEE Transactions on Microwave Theory and Techniques, vol.64, issue.5, pp.1351-1358, 2016. ,
DOI : 10.1109/TMTT.2016.2549528
Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations, IEEE Journal of the Electron Devices Society, vol.5, issue.3, pp.175-181, 2017. ,
DOI : 10.1109/JEDS.2017.2672685
Investigation of deep levels and their physical properties, IEEE Electron Device Letters, vol.38, pp.1109-1112, 2017. ,
Low Frequency Drain Noise Characterization and TCAD Physical Device Simulations: Identification and analysis of GaN buffer traps, IEEE Electron Device Letters, 2017. ,
Drain-Lag Characterization and TCAD-based Device Simulations of GaN HEMTs: Identification of physical location of traps causing drain-lag effects Deep centers in as-grown and electron-irradiated n-GaN, International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046), pp.35-42, 2000. ,
Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy, Materials Science and Engineering: C, vol.28, issue.5-6, pp.5-6, 2008. ,
DOI : 10.1016/j.msec.2007.10.068
URL : https://hal.archives-ouvertes.fr/hal-00357801
Investigation of Traps in AlGaN/GaN HEMTs by Current Transient Spectroscopy, Mater. Sci. Eng. C, vol.26, issue.2, pp.3-383, 2006. ,
URL : https://hal.archives-ouvertes.fr/hal-00154931
60Co gamma-irradiation-induced defects in n-GaN, 60Co Gamma-Irradiation-Induced Defects in n-GaN, pp.4354-4356, 2002. ,
DOI : 10.1016/0169-4332(96)00283-8
Identification of deep levels in GaN associated with dislocations, Journal of Physics: Condensed Matter, vol.16, issue.34, p.6305, 2004. ,
DOI : 10.1088/0953-8984/16/34/027
As-grown deep-level defects in n-GaN grown by metal???organic chemical vapor deposition on freestanding GaN, Journal of Applied Physics, vol.743, issue.5, p.53513, 2012. ,
DOI : 10.1063/1.1361273
Traps Centers and Deep Defects Contribution in Current Instabilities for AlGaN/GaN HEMT's on Silicon and Sapphire Substrates, Microelectron. J, vol.37, issue.4, pp.363-370, 2006. ,
Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy, Applied Physics Letters, vol.100, issue.5 ,
DOI : 10.1103/PhysRevB.55.4689
Electrical Characterization of Isoelectronic In-Doping Effects in GaN Films Grown by Metal Organic Vapor Phase Epitaxy Deep Level Transient Spectroscopy in Plasma-assisted Molecular Beam Epitaxy Grown Al0, Appl. Phys. Lett. Appl. Phys. Lett, vol.100, issue.97 11, pp.52114-897, 2000. ,
Characterization and analysis of trap-related effects in AlGaN???GaN HEMTs, [15] A. Y. Polyakov, N. B. Smirnov, A.V. Govorkov, A. V. Markov, Q. Sun, pp.1639-1642, 2001. ,
DOI : 10.1016/j.microrel.2007.07.005
Electrical Properties and Deep Traps Spectra of aplane GaN Films Grown on r-plane Sapphire, Mater. Sci. Eng. B, vol.166, issue.3, pp.220-224, 2010. ,
Neutron Irradiation Effects in AlGaN, GaN Heterojunctions Phys. B Condens. Matter, vol.376377, pp.523-526, 2006. ,
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition, J. Electron. Mater, vol.37, issue.5, pp.569-572, 2008. ,
Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs, Microelectronics Reliability, vol.52, issue.12, pp.2875-2879, 2005. ,
DOI : 10.1016/j.microrel.2012.08.023
Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy, Applied Physics Letters, vol.93, issue.11, p.112101, 2008. ,
DOI : 10.1063/1.1338970
Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy, Applied Physics Letters, vol.2009, issue.24, p.242112, 2010. ,
DOI : 10.1063/1.117727
Deep Level Investigation by Capacitance and Conductance Transient Spectroscopy in AlGaN, Journal of Optoelectronics and Advanced Materials, vol.1123, issue.11, pp.1713-1717, 2009. ,
Deep Levels in n-type AlGaN Grown by Hydride Vapor-Phase Epitaxy on Sapphire Characterized by Deep-Level Transient Spectroscopy, Phys. Rev. B Appl. Phys. Lett. Appl. Phys. Lett, vol.55, issue.96 7, pp.4382-4387, 1997. ,
Experimental and numerical correlation between current-collapse and Fe-doping profiles in GaN HEMTs, IEEE International Reliability Physics Symposium (IRPS), 2012, p. CD.2.1-CD.2.4 ,
Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress, IEEE Electron Device Letters, vol.31, issue.7, pp.662-664, 2010. ,
DOI : 10.1109/LED.2010.2047092
Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs, 2012 IEEE International Reliability Physics Symposium (IRPS), pp.2-3, 2012. ,
DOI : 10.1109/IRPS.2012.6241780
Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol.103, issue.22, pp.223507-1485, 2003. ,
DOI : 10.1063/1.4826922
Deep defects in GaN/AlGaN/SiC heterostructures, Journal of Applied Physics, vol.105, issue.9, p.93706, 2009. ,
DOI : 10.1134/1.1187657
Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer, IEEE Trans. Electron Devices, vol.63, issue.1, pp.326-332, 2016. ,
Investigation of deep energy levels in heterostructures based on GaN by DLTS, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, pp.135-138, 2010. ,
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design, IEEE Electron Device Letters, vol.36, issue.10, pp.1011-1014, 2015. ,
DOI : 10.1109/LED.2015.2474116
Direct Comparison of Traps in InAlN ,
Spatially-resolved Spectroscopic Measurements of Ec ? 0.57 eV Traps in AlGaN/GaN High Electron Mobility Transistors, Appl. Phys. Lett, vol.102, issue.19, 2013. ,
Traps localization and analysis in GaN HEMTs Field dependent transformation of electron traps, Microelectron. Reliab, vol.5410, issue.9, pp.2222-2226, 2014. ,
Deep level defect in Si-implanted GaN???n+-p junction, Applied Physics Letters, vol.82, issue.21, pp.3671-3673, 2003. ,
DOI : 10.1063/1.1421627
Advantages and Limitations of Drain Current Transient Measurements Hydrogen passivation of deep levels in n?GaN The Effects of Gate Length Variation and Trapping Effects on the Transient Response of AlGaN/GaN HEMT's on SiC Substrates, GaN HEMTs-Part I, pp.3166-3175, 2000. ,
Role of Buffer Doping and Pre-existing Trap States in the Current Collapse and Degradation of AlGaN, IEEE International Reliability Physics Symposium, pp.6-6, 2014. ,
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements, IEEE Trans. Electron Devices, vol.61, issue.12, pp.4070-4077, 2014. ,
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25-µm AlGaN, A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN, pp.73501-1550, 2012. ,
Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes Traps in AlGaN?GaN?SiC heterostructures studied by deep level transient spectroscopy, J. Appl. Phys. Appl. Phys. Lett, vol.10949, issue.87 18, pp.114506-182115, 2005. ,
Spatially-Discriminating Trap Characterization Methods for HEMTs and their Application to RF-stressed AlGaN/GaN HEMTs, International Electron Devices Meeting, 2010. ,
Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors, Electronics Letters, vol.37, issue.10, pp.661-662, 2001. ,
DOI : 10.1049/el:20010434