Kinetics of large B clusters in crystalline and preamorphized silicon, Journal of Applied Physics, vol.110, issue.63, p.60, 2011. ,
Studies in Molecular Dynamics. I. General Method, The Journal of Chemical Physics, vol.9, issue.2, pp.459-466, 1959. ,
DOI : 10.1063/1.1743957
The activation strain tensor: Nonhydrostatic stress effects on crystal-growth kinetics, Physical Review B, vol.241, issue.18, pp.9812-9816, 1991. ,
DOI : 10.1098/rspa.1957.0133
URL : https://dash.harvard.edu/bitstream/handle/1/2860451/Aziz_Sabin_Lu_1991_phyrevB.pdf?sequence=2
The Mechanism of Solid Phase Epitaxy, Crucial Issues in Semiconductor Materials and Processing Technologies, pp.465-476, 1992. ,
Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anisotropy effects, Journal of Applied Physics, vol.28, issue.10, pp.5462-5468, 2004. ,
DOI : 10.1063/1.127029
Advances, challenges and opportunities in 3D CMOS sequential integration, 2011 International Electron Devices Meeting, pp.7-10, 2011. ,
DOI : 10.1109/IEDM.2011.6131506
URL : https://infoscience.epfl.ch/record/170570/files/IEDM 2011_Shashi.pdf
Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length, VLSI Technology (VLSIT), 2011 Symposium on, pp.158-159, 2011. ,
Low temperature FDSOI devices, a key enabling technology for 3D sequential integration, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), p.2013 ,
DOI : 10.1109/VLSI-TSA.2013.6545629
3DVLSI with CoolCube process: An alternative path to scaling, 2015 Symposium on VLSI Technology (VLSI Technology), pp.48-49, 2015. ,
DOI : 10.1109/VLSIT.2015.7223698
Environment-dependent interatomic potential for bulk silicon, Physical Review B, vol.1, issue.14, pp.8542-8552, 1997. ,
DOI : 10.1088/0965-0393/1/1/009
URL : http://arxiv.org/pdf/cond-mat/9704137
Atomistic simulations of solid-phase epitaxial growth in silicon, Physical Review B, vol.74, issue.10, pp.6696-6700, 2000. ,
DOI : 10.1063/1.355031
Generation of amorphous-silicon structures with use of molecular-dynamics simulations, Physical Review B, vol.49, issue.14, pp.7437-7441, 1987. ,
DOI : 10.1103/PhysRevLett.49.1271
A new algorithm for Monte Carlo simulation of Ising spin systems, Journal of Computational Physics, vol.17, issue.1, pp.10-18, 1975. ,
DOI : 10.1016/0021-9991(75)90060-1
Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide, Physical Review Letters, vol.34, issue.11, pp.581-585, 1969. ,
DOI : 10.1063/1.1702734
First demonstration of a CMOS over CMOS 3D VLSI CoolCube TM integration on 300mm wafers, 2016 IEEE Symposium on VLSI Technology, pp.1-2, 2016. ,
quantum-mechanical characterization, Physical Review B, vol.106, issue.128, pp.170-177, 1998. ,
DOI : 10.1021/ja00318a009
Impact of strain on hole mobility in the inversion layer of PMOS device with SiGe alloy thin film, The 7th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2014), pp.135-140, 2015. ,
DOI : 10.1016/j.tsf.2015.01.047
Recrystallization of silicon amorphized by carbon implantation, Applied Physics Letters, vol.199, issue.13, pp.1434-1436, 1991. ,
DOI : 10.1557/PROC-199-235
/Si strained???layer structures amorphized by ion implantation, Applied Physics Letters, vol.47, issue.1, pp.42-44, 1989. ,
DOI : 10.1016/S0022-0248(74)80055-2
The Theory of Transformation in Metals and Alloys, International Series of Monographs on Metal Physics and Physical Metallurgy, 1965. ,
Amorphization, recrystallization and end of range defects in germanium, Proceedings of the {EMRS} 2009 Spring Meeting Symposium I: Silicon and germanium issues for future {CMOS} devices, pp.2307-2313, 2010. ,
DOI : 10.1016/j.tsf.2009.09.162
thin layer on (100) Si, Journal of Applied Physics, vol.48, issue.7, pp.3528-3533, 1996. ,
DOI : 10.1063/1.113278
Characterization of extended defects in SiGe alloys formed by high dose Ge+ implantation into Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with, Materials and Atoms, vol.120, issue.119, pp.156-160, 1996. ,
Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions, Materials Science and Engineering: B, vol.114, issue.115, pp.174-179, 2004. ,
DOI : 10.1016/j.mseb.2004.07.049
Defect evolution and dopant activation in laser annealed Si and Ge, MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor {CMOS} devices, pp.188-195, 2016. ,
DOI : 10.1016/j.mssp.2015.09.011
URL : http://orbit.dtu.dk/en/publications/defect-evolution-and-dopant-activation-in-laser-annealed-si-and-ge(52a52500-66b3-4c36-b283-63efc0595d5f).html
B ions, Journal of Applied Physics, vol.7, issue.10, pp.4234-4240, 1977. ,
DOI : 10.1103/PhysRevB.7.1782
Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals, Solid State Communications, vol.21, issue.11, pp.1019-1021, 1977. ,
DOI : 10.1016/0038-1098(77)90009-6
Substrate???orientation dependence of the epitaxial regrowth rate from Si???implanted amorphous Si, Journal of Applied Physics, vol.21, issue.7, pp.3906-3911, 1978. ,
DOI : 10.1016/0038-1098(77)90009-6
Density of amorphous Si, Applied Physics Letters, vol.40, issue.4, pp.437-439, 1994. ,
DOI : 10.1016/0022-3093(84)90307-7
The Amorphous Side of Solid Phase Epitaxy, Crucial Issues in Semiconductor Materials and Processing Technologies, pp.477-482, 1992. ,
DOI : 10.1007/978-94-011-2714-1_48
Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si 0.83 Ge 0.17 alloys, J. Appl. Phys, vol.101, issue.115, p.90, 2007. ,
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films, Applied Physics Letters, vol.93, issue.23, pp.10-1063, 2008. ,
Substrate orientation dependence on the solid phase epitaxial growth rate of Ge, Journal of Applied Physics, vol.113, issue.3, pp.17-18, 2013. ,
DOI : 10.1088/0022-3719/20/32/001
Monte Carlo simulations, Physical Review Letters, vol.64, issue.16, pp.2116-2119, 1991. ,
DOI : 10.1103/PhysRevLett.64.2038
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation, Applied Physics Letters, vol.2002, issue.24, pp.60-62, 2006. ,
DOI : 10.1103/PhysRevB.45.6517
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers, AIP Conference Proceedings, vol.1496, issue.1, pp.272-275, 2012. ,
DOI : 10.1063/1.4766541
A Step towards Energy Efficient Computing: Redesigning a Hydrodynamic Application on CPU-GPU, 2014 IEEE 28th International Parallel and Distributed Processing Symposium, pp.972-981, 2014. ,
DOI : 10.1109/IPDPS.2014.103
Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation, Journal of Applied Physics, vol.55, issue.6, pp.1795-1804, 1985. ,
DOI : 10.1103/PhysRevLett.52.2360
Some observations on the amorphous to crystalline transformation in silicon, Journal of Applied Physics, vol.50, issue.1, pp.397-403, 1982. ,
DOI : 10.1080/00107516908204405
Boron diffusion in amorphous silicon and the role of fluorine, Applied Physics Letters, vol.84, issue.21, pp.4283-4285, 2004. ,
DOI : 10.1109/55.902833
Kinetic roughening and smoothing of the crystalline???amorphous interface during solid phase epitaxial crystallization of GeSi alloy layers, Applied Physics Letters, vol.69, issue.18, pp.2677-2679, 1996. ,
DOI : 10.1063/1.117675
Multigate transistors as the future of classical metal???oxide???semiconductor field-effect transistors, Nature, vol.51, issue.7373, pp.310-316, 2011. ,
DOI : 10.1016/j.sse.2006.11.013
Theoretical foundations of dynamical Monte Carlo simulations, The Journal of chemical physics, vol.95, issue.2, pp.1090-1096, 1991. ,
Molecular dynamics simulations of solid-phase epitaxial growth in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with, Materials and Atoms, vol.202, issue.46, pp.255-26001866, 2003. ,
A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors, IEEE International Electron Devices Meeting 2003, pp.11-17, 2003. ,
DOI : 10.1109/IEDM.2003.1269442
Atomistic examinations of the solid-phase epitaxial growth of silicon, Journal of Crystal Growth, vol.311, issue.11, pp.3195-3203, 2009. ,
DOI : 10.1016/j.jcrysgro.2009.02.050
Bond-order potential for silicon, Physical Review B, vol.56, issue.15, p.155207, 2007. ,
DOI : 10.1103/PhysRevB.46.2250
Comparison of the Effect of Boron and Phosphorus Impurities on Solid Phase Epitaxial Regrowth of Amorphous Silicon, MRS Proceedings, pp.71-77, 1989. ,
DOI : 10.1063/1.99117
Kinetics of arsenic-enhanced solid phase epitaxy in silicon, Journal of Applied Physics, vol.56, issue.8, pp.4427-4431, 2004. ,
DOI : 10.1063/1.103053
Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers, Physical Review B, vol.273, issue.274, pp.45216-45232, 2007. ,
DOI : 10.1002/pssa.2210890223
Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium, Physical Review B, vol.54, issue.20, p.214109, 2008. ,
DOI : 10.1016/0038-1101(91)90149-S
Pearu Petersonet al. SciPy: Open source scientific tools for Python, 2001. ,
A systematic analysis of defects in ion-implanted silicon, Applied Physics A Solids and Surfaces, vol.44, issue.8, pp.1-34, 1988. ,
DOI : 10.1007/BF02880410
Interatomic potential for silicon defects and disordered phases, Physical Review B, vol.3, issue.5, pp.2539-2550, 1998. ,
DOI : 10.1103/PhysRevLett.54.1392
URL : http://arxiv.org/pdf/cond-mat/9712058
Phase Diagram of Silicon from Atomistic Simulations, Physical Review Letters, vol.150, issue.9, p.95701, 2005. ,
DOI : 10.1103/PhysRevB.31.5262
Test of Vegard's law in thin epitaxial SiGe layers, Journal of Crystal Growth, vol.157, issue.1-4, pp.68-72, 1995. ,
DOI : 10.1016/0022-0248(95)00373-8
Dangling versus floating bonds, Physical Review B, vol.36, issue.8, pp.5412-5416, 1999. ,
DOI : 10.1103/PhysRevLett.55.2001
Implications of Historical Trends in the Electrical Efficiency of Computing, IEEE Annals of the History of Computing, vol.33, issue.3, pp.46-54, 2011. ,
DOI : 10.1109/MAHC.2010.28
: a versatile tool for reciprocal space conversion of scattering data recorded with linear and area detectors, Journal of Applied Crystallography, vol.32, issue.4, pp.1162-1170, 2013. ,
DOI : 10.1107/S0021889899001223
Alloy Layers, Physical Review Letters, vol.63, issue.147, pp.858-861, 1994. ,
DOI : 10.1063/1.110125
Recrystallisation of relaxed SiGe alloy layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with, Materials and Atoms, vol.106, issue.86, pp.346-349, 1995. ,
Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation, The European Physical Journal B, vol.77, issue.3, pp.283-290, 2011. ,
DOI : 10.1103/PhysRevB.77.214109
URL : https://hal.archives-ouvertes.fr/hal-00600162
Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential, Journal of Applied Physics, vol.47, issue.12, pp.35-56, 2007. ,
DOI : 10.1103/PhysRevB.34.6987
URL : https://hal.archives-ouvertes.fr/hal-00255849
Density of amorphous SixGe1???x alloys prepared by high-energy ion implantation, Journal of Non-Crystalline Solids, vol.191, issue.1-2, pp.193-199, 1995. ,
DOI : 10.1016/0022-3093(95)00310-X
High Resolution Radial Distribution Function of Pure Amorphous Silicon, Physical Review Letters, vol.53, issue.17, pp.3460-3463, 1999. ,
DOI : 10.1103/PhysRevB.53.9791
Molecular Dynamics Modeling of Stress and Orientation Dependence of Solid Phase Epitaxial Regrowth, MRS Proceedings, pp.47-52, 2011. ,
DOI : 10.1063/1.2749868
Molecular dynamics modeling of solid phase epitaxial regrowth, Journal of Applied Physics, vol.111, issue.11, pp.10-1063, 2012. ,
DOI : 10.1063/1.2801518
Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects, Journal of Applied Physics, vol.106, issue.6, pp.37-51, 2009. ,
DOI : 10.1063/1.2749186
URL : https://hal.archives-ouvertes.fr/hal-00471990
measured by time???resolved reflectivity, Applied Physics Letters, vol.91, issue.5, pp.501-503, 1993. ,
DOI : 10.1103/PhysRevB.44.9812
Thermodynamics; revised by pitzer, ks; brewer, l, 1961. ,
B???doped) amorphous Si, Journal of Applied Physics, vol.48, issue.6, pp.4399-4405, 1982. ,
DOI : 10.1080/00337578008209247
Interface roughness during thermal and ion???induced regrowth of amorphous layers on Si(001), Applied Physics Letters, vol.19, issue.14, pp.1803-1805, 1994. ,
DOI : 10.1016/S0168-583X(87)80086-1
Pressure???enhanced crystallization kinetics of amorphous Si and Ge: Implications for point???defect mechanisms, Journal of Applied Physics, vol.19, issue.10, pp.5323-5345, 1991. ,
DOI : 10.1016/S0168-583X(87)80086-1
Stability of defects in crystalline silicon and their role in amorphization, Physical Review B, vol.79, issue.81, p.45214, 2001. ,
DOI : 10.1063/1.362632
Microscopic Description of the Irradiation-Induced Amorphization in Silicon, Physical Review Letters, vol.3, issue.13, pp.135504-135542, 2003. ,
DOI : 10.1103/PhysRevB.44.9118
The laser annealing induced phase transition in silicon: a molecular dynamics study. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with, Materials and Atoms, vol.216, pp.57-61, 2004. ,
Molecular dynamics simulation of the regrowth of nanometric multigate Si devices, Journal of Applied Physics, vol.2008, issue.3, pp.10-1063, 2012. ,
DOI : 10.1063/1.445731
Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon, Applied Physics Letters, vol.98, issue.15, pp.10-1063, 2011. ,
DOI : 10.1063/1.325397
Understanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology, Journal of Applied Physics, vol.112, issue.2, pp.10-1063, 2012. ,
DOI : 10.1016/S0168-583X(00)00403-1
Ignacio Martin-Bragado and Nikolas Zographos. Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo, 2011. ,
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon, Physical Review B, vol.71, issue.3, p.35202, 2005. ,
DOI : 10.1103/PhysRevLett.69.116
MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion, Computer Physics Communications, vol.184, issue.12, pp.2703-2710, 2013. ,
DOI : 10.1016/j.cpc.2013.07.011
URL : http://arxiv.org/pdf/1503.03987
Stability of Ordered Bulk and Epitaxial Semiconductor Alloys, Physical Review Letters, vol.11, issue.13, pp.1400-1403, 1986. ,
DOI : 10.1007/BF02658905
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si, Physical Review B, vol.205, issue.15, p.155323, 2010. ,
DOI : 10.1557/PROC-205-45
Mersenne twister: a 623-dimensionally equidistributed uniform pseudo-random number generator, ACM Transactions on Modeling and Computer Simulation, vol.8, issue.1, pp.3-30, 1998. ,
DOI : 10.1145/272991.272995
URL : http://www.math.sci.hiroshima-u.ac.jp/~m-mat/MT/ARTICLES/mt.pdf
Defects in epitaxial multilayers I. Misfit dislocations, Journal of Crystal Growth, vol.27, issue.0, pp.118-125, 1974. ,
DOI : 10.1016/0022-0248(74)90424-2
Boron ripening during solidphase epitaxy of amorphous silicon, Physical Review B, vol.69, issue.65, pp.60-67, 2004. ,
Crystallization kinetics of mixed amorphous-crystalline nanosystems, Physical Review B, vol.82, issue.414, p.75408, 2008. ,
DOI : 10.1063/1.2743089
Electronic materials science: for integrated circuits in si and gaas, 1990. ,
Kinetics of solid phase epitaxy in buried amorphous Si layers formed by MeV ion implantation, Applied Physics Letters, vol.76, issue.7, pp.925-927, 1996. ,
DOI : 10.1063/1.116945
The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with, Materials and Atoms, vol.148, issue.1-498, pp.350-354, 1999. ,
The monte carlo method, Journal of the American statistical association, vol.44, issue.247, pp.335-341, 1949. ,
Equation of state calculations by fast computing machines, The journal of chemical physics, vol.21, issue.6, pp.1087-1092, 1953. ,
for three-dimensional visualization of crystal, volumetric and morphology data, Journal of Applied Crystallography, vol.51, issue.6, pp.1272-1276, 2011. ,
DOI : 10.1107/S0108767394013292
Role of defects during amorphization and relaxation processes in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with, Materials and Atoms, vol.106, issue.56, pp.198-205, 1995. ,
Molecular-dynamics simulations of solid-phase epitaxy of Si:???Growth mechanisms, Physical Review B, vol.56, issue.12, pp.8537-8540, 2000. ,
DOI : 10.1103/PhysRevLett.56.155
Interface structures during solid???phase???epitaxial growth in ion implanted semiconductors and a crystallization model, Journal of Applied Physics, vol.30, issue.12, pp.8607-8614, 1982. ,
DOI : 10.1016/0022-3697(62)90130-0
Kinetics of solid phase crystallization in amorphous silicon, Materials Science Reports, vol.3, issue.1, pp.1-7780005, 1988. ,
DOI : 10.1016/S0920-2307(88)80005-7
The growth of strained Si1??? xGe x alloys on 001 silicon using solid phase epitaxy, Journal of Materials Research, vol.5, issue.05, pp.1023-1031, 1990. ,
DOI : 10.1063/1.96206
on ???001??? Si system, Journal of Applied Physics, vol.202, issue.8, pp.4278-4286, 1991. ,
DOI : 10.1557/PROC-202-567
Defects in Amorphous Silicon: A New Perspective, Phys. Rev. Lett, vol.57, pp.2979-2982, 1986. ,
A topological point defect regulates the evolution of extended defects in irradiated silicon, Applied Physics Letters, vol.98, issue.17, pp.10-1063, 2011. ,
Precision measurements of the effect of implanted boron on silicon solid phase epitaxial regrowth, Journal of Materials Research, vol.45, issue.02, pp.298-308, 1988. ,
DOI : 10.1149/1.2134428
Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.22, issue.1, pp.297-301, 2004. ,
DOI : 10.1116/1.1643053
Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys, Materials Science in Semiconductor Processing, vol.42, pp.247-250, 2016. ,
DOI : 10.1016/j.mssp.2015.07.059
An atomistic investigation of the composition dependence in SiGe alloys during Solid Phase Epitaxial Regrowth, Acta Materialia, vol.106, pp.290-294, 2016. ,
DOI : 10.1016/j.actamat.2016.01.022
B cluster formation and dissolution in Si: A scenario based on atomistic modeling, Applied Physics Letters, vol.74, issue.24, pp.3657-3659, 1999. ,
DOI : 10.1080/00337577108232558
/Si strained???layer heterostructures, Applied Physics Letters, vol.33, issue.3, pp.322-324, 1985. ,
DOI : 10.1016/0040-6090(76)90085-7
Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures, Appl. Phys. Lett. Applied Physics Letters, vol.47, issue.49 4, pp.229-229, 1985. ,
Intrinsic point defects, impurities, and their diffusion in silicon, p.11, 2004. ,
DOI : 10.1007/978-3-7091-0597-9
Evolution of surface morphology and strain during SiGe epitaxy, Thin Solid Films, vol.222, issue.1-2, pp.78-84, 1992. ,
DOI : 10.1016/0040-6090(92)90042-A
Fast Parallel Algorithms for Short-Range Molecular Dynamics, Journal of Computational Physics LAMMPS citing, vol.117, issue.42, pp.1-19, 1995. ,
DOI : 10.2172/10176421
URL : http://www.cs.sandia.gov/~sjplimp/papers/jcompphys95.ps.gz
Tetrahedrally Coordinated Random-Network Structure, Physical Review Letters, vol.54, issue.2, pp.92-95, 1973. ,
DOI : 10.1021/ja01349a006
Strain and defects depth distributions in undoped and boron-doped Si1???xGex layers grown by solid phase epitaxy, Journal of Applied Physics, vol.77, issue.6, pp.2887-2895, 1997. ,
DOI : 10.1116/1.568741
Structural relaxation and defect annihilation in pure amorphous silicon, Physical Review B, vol.36, issue.20, pp.3702-3725, 1991. ,
DOI : 10.1016/0169-4332(89)90954-9
Kinetics and Morphological Instabilities of Stressed Solid-Solid Phase Transformations, Physical Review Letters, vol.100, issue.16, pp.165501-89, 2008. ,
DOI : 10.1016/j.actamat.2006.02.013
Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation, Journal of Applied Physics, vol.98, issue.8, pp.10-1063, 2005. ,
DOI : 10.1103/PhysRevB.53.7836
A structural model for the interface between amorphous and (100) crystalline silicon, Philosophical Magazine Part B, vol.15, issue.4, pp.673-687, 1981. ,
DOI : 10.1016/0022-3093(74)90049-0
alloy layers grown on compositionally graded buffers, Applied Physics Letters, vol.47, issue.25, pp.3476-3478, 1993. ,
DOI : 10.1103/PhysRevLett.51.1069
Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium, Journal of Applied Physics, vol.11, issue.9, pp.10-1063, 2009. ,
DOI : 10.1063/1.2945291
High???concentration boron diffusion in silicon: Simulation of the precipitation phenomena, Journal of Applied Physics, vol.44, issue.7, pp.3250-3258, 1990. ,
DOI : 10.1063/1.98431
Kinetics of motion of crystal-melt interfaces, AIP Conference Proceedings, pp.73-83, 1979. ,
DOI : 10.1063/1.31738
A structural model for the interface between amorphous and crystalline Si or Ge, Acta Metallurgica, vol.26, issue.7, pp.1167-1177, 1978. ,
DOI : 10.1016/0001-6160(78)90145-1
Crystal grain nucleation in amorphous silicon, Journal of Applied Physics, vol.59, issue.10, pp.5383-5414, 1998. ,
DOI : 10.1063/1.106054
Computer simulation of local order in condensed phases of silicon, Physical Review B, vol.63, issue.8, pp.5262-5271, 1985. ,
DOI : 10.1063/1.431500
Role of the bond defect for structural transformations between crystalline and amorphous silicon:???A molecular-dynamics study, Physical Review B, vol.58, issue.128, pp.8150-8154, 2000. ,
DOI : 10.1103/PhysRevB.58.4579
Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy, Journal of Applied Physics, vol.4, issue.2, pp.637-646, 1996. ,
DOI : 10.1557/PROC-4-183
Visualization and analysis of atomistic simulation data with OVITO-the Open Visualization Tool. Modelling and Simulation in, Materials Science and Engineering, vol.18, issue.1, pp.15012-15055, 2010. ,
alloys, Journal of Applied Physics, vol.32, issue.12, pp.6716-6719, 1996. ,
DOI : 10.1063/1.1710079
URL : https://hal.archives-ouvertes.fr/hal-01513414
Chapter 3 -The Method of Total Scattering and Atomic Pair Distribution Function Analysis, Underneath the Bragg Peaks - Structural Analysis of Complex Materials, volume 16 of Pergamon Materials Series, pp.55-111 ,
Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes, Physical Review B, vol.54, issue.70, pp.14279-14289, 1997. ,
DOI : 10.1103/PhysRevB.54.16683
Competing relaxation mechanisms in strained layers, Physical Review Letters, vol.62, issue.22, pp.3570-3573, 1994. ,
DOI : 10.1063/1.108842
Modeling solid-state chemistry: Interatomic potentials for multicomponent systems, Physical Review B, vol.37, issue.8, pp.5566-5568, 1989. ,
DOI : 10.1103/PhysRevB.37.1308
Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels. Electron Devices, IEEE Transactions on, vol.50, issue.5, pp.1328-1333, 2003. ,
Boron diffusion in amorphous silicon, {EMRS} 2005, Symposium {DMaterials} Science and Device Issues for Future Technologies, pp.124-125, 2005. ,
DOI : 10.1016/j.mseb.2005.08.079
High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding, 2008 IEEE International Electron Devices Meeting, pp.1-4, 2008. ,
DOI : 10.1109/IEDM.2008.4796663
random alloy, Physical Review B, vol.30, issue.15, pp.8388-8396, 1992. ,
DOI : 10.1103/PhysRevB.30.6217
Role of Electronic Processes in Epitaxial Recrystallization of Amorphous Semiconductors, Physical Review Letters, vol.13, issue.12, pp.1069-1072, 1983. ,
DOI : 10.1103/PhysRevB.13.3548
Computer Generation of Structural Models of Amorphous Si and Ge, Physical Review Letters, vol.53, issue.13, pp.1392-1395, 1985. ,
DOI : 10.1103/PhysRevLett.53.2429
Monte Carlo studies of vacancy migration in binary ordered alloys: I, Proceedings of the Physical Society, p.735, 1966. ,
Simulation of dopant diffusion and activation during flash lamp annealing Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, Materials Science and Engineering: B, pp.154-155, 2008. ,